Overview of recent progress in condition monitoring for insulated gate bipolar transistor modules:Detection,estimation,and prediction

作     者：Meng Huang Haoran Wang Liangjun Bai Kang Li Ju Bai Xiaoming Zha 

作者机构：School of Electrical Engineering and AutomationWuhan UniversityWuhanChina Energy DepartmentAalborg UniversityAalborgDenmark 

出 版 物：《High Voltage》 (高电压（英文）)

年 卷 期：2021年第6卷第6期

页      面：967-977页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0807[工学-动力工程及工程热物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：National Natural Science Foundation of China  NNSFC  NNSF  NSF  NSFC  (51637007) 

主　　题：bipolar transistor estimation 

摘      要：The insulated gate bipolar transistor(IGBT)is one of the most fragile components in power electronics converters.In order to improve the reliability of IGBTs,various measurements are taken according to the condition monitoring(CM)technique.Traditional CM techniques include the measurement and estimation of the device operation conditions.Recently,emerging techniques have been developed,not only for the detection and estimation but also for the prognostics of IGBTs with the condition data.In this paper,a review is performed on the recent progress in the CM techniques for IGBTs.First,some emerging electrical and thermal measurements are reviewed.Based on the sensed data,the health indicator estimation techniques are summarised.Moreover,for the emerging prognostics and health management applications,some remaining using lifetime(RUL)prediction methods are reviewed.Finally,the research gaps and directions are discussed for the CM in IGBT applications.