High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires

作     者：Zhi Tao Yi-an Huang Xiang Liu Jing Chen Wei Lei Xiaofeng Wang Lingfeng Pan Jiangyong Pan Qianqian Huang Zichen Zhang 

作者机构：School of Electronic Science and Engineering Southeast University State Key Laboratory of Precision Measurement Technology and Instruments Collaborative Innovation Center for Micro/Nano Fabrication Device and System Department of Precision Instrument Tsinghua University School of Information and Communication EngineeringBeijing University of Posts and Telecommunications Institute of Semiconductors Chinese Academy of Science 

出 版 物：《Nano-Micro Letters》 (纳微快报（英文版）)

年 卷 期：2016年第8卷第3期

页      面：247-253页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：partially supported by the National Key Basic Research Program 973 (2013CB328804, 2013CB328803) the National High-Tech R&D Program 863 of China (2012AA03A302, 2013AA011004) the National Natural Science Foundation Project (51120125001, 61271053, 61306140, 61405033, 91333118, 61372030, 61307077 and 51202028) the Beijing Natural Science Foundation (4144076) the China Postdoctoral Science Foundation (2013M530613 and 2015T80080) the Natural Science Foundation Project of Jiangsu Province (BK20141390, BK20130629, and BK20130618) the Scientific Research Department of Graduate School in Southeast University 

主　　题：Thin-film transistor Quantum dots Reduced graphene oxide ZnO nanowires 

摘      要：In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide(RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 AW^(-1) and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.