Reversible chemical switches of functionalized nitrogen-doped graphene field-effect transistors

作     者：Rong Rong Song Liu Rong Rong;Song Liu

作者机构：Institute of Chemical Biology and Nanomedicine(ICBN)State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China 

出 版 物：《Chinese Chemical Letters》 (中国化学快报（英文版）)

年 卷 期：2020年第31卷第2期

页      面：565-569页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 081702[工学-化学工艺] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 

主　　题：Field-effect transistors Nitrogen-doped graphene Doping effect Ti complex Reversible switch 

摘      要：Nitrogen doping is a promising way to modulate the electrical properties of graphene to realize graphene-based electronics and promise fascinating properties and ***,we report a method to noncovalently assembly titanium(Ⅳ) bis(ammoniumlactato) dihydroxide(Ti complex) on nitrogen-doped graphene to create a reliable hybrids which can be used as a reversible chemical induced *** the adsorption and desorption of Ti complex in sequential treatments,the conductance of the nitrogen-doped graphene transistors was finely *** experiments with pristine graphene clearly demonstrated the important effort of the nitrogen in this chemical *** optimized conditions,nitrogen-doped graphene transistors open up new ways to develop multifunctional devices with high sensitivity.