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MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

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Chinese Physics B 2007年第11期16卷 3494-3497页

作者：程知群蔡勇刘杰周玉刚 lau kei may Chen J.Kevin Microelectronics CAD Center Hangzhou Dianzi University Hangzhou 310018China Department of Electrical and Computer Engineering HongKong University of Science and TechnologyHongKongChina

A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm ×100 μm device showed very high-dynamic range with decent gain and noise figure.

关键词： slow noise amplifier composite-channel A1GaN/GaN HEMTs linearity

侧向选区异质外延绝缘体上硅的Ⅲ-Ⅴ族有源器件(特邀)

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激光与光电子学进展 2024年第19期61卷 74-80页

作者：薛莹刘纪美香港科技大学电子与计算机工程学院中国香港999077

Ⅲ-Ⅴ族有源器件及其与无源器件的高效耦合集成是硅光子技术得以进一步发展的核心。将高性能的Ⅲ-Ⅴ族有源器件通过异质外延集成在硅片上,可以实现晶圆级硅光子集成电路,从而以低成本、高通量、大带宽和大规模集成来充分发挥硅光子的优... 详细信息

Ⅲ-Ⅴ族有源器件及其与无源器件的高效耦合集成是硅光子技术得以进一步发展的核心。将高性能的Ⅲ-Ⅴ族有源器件通过异质外延集成在硅片上,可以实现晶圆级硅光子集成电路,从而以低成本、高通量、大带宽和大规模集成来充分发挥硅光子的优势。从侧向选区外延硅基Ⅲ-Ⅴ族有源器件方面展开,重点介绍硅基Ⅲ-Ⅴ族激光器和光电探测器的实现及其与硅无源器件的共平面高效光耦合。讨论其无缓冲层、面内结构、横向堆叠有源区等特点,并展望该技术的发展前景。

关键词：硅光子激光器光电探测器侧向选区外延

Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si （111）

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Chinese Physics Letters 2010年第3期27卷 294-296页

作者：王辉梁琥王勇吴嘉伟邓冬梅刘纪美 State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences PO Box 912 Beijing 100083 Photonics Technology Center Electronic and Computer Engineering Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong

We report the growth of high quality and crack-free GaN film on Si （111） substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations （TDs） in the overgrown GaN film which leads to a decrease of TD density.

关键词： Surfaces interfaces and thin films Condensed matter: structural mechanical & thermal

Monolithic full-color active-matrix micro-LED microdisplay using InGaN/AlGaInP heterogeneous integration

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Light(Science & Applications) 2023年第11期12卷 2459-2467页

作者： Longheng Qi Peian Li Xu Zhang Ka Ming Wong kei may lau Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina

A prototype of full-color active-matrix micro-light-emitting diode(micro-LED)micro-display with a pixel density of 391 pixel per inch(ppi)using InGaN/AlGaInP heterogeneous integration is *** blue/green dual-color micro-LED arrays realized on a single metal organic chemical vapor deposition(MOCVD)-grown GaN-on-Si epiwafer and AlGaInP red micro-LED arrays are both monolithically fabricated,followed by the integration with a common complementary metal oxide semiconductor(CMOS)backplane via flip-chip bonding technology to form a doublelayer thin-film display ***-color images with decent color gamut and brightness are successfully displayed through the fine adjustment of driving current densities of RGB *** full-color display combines the advantages of high quantum efficiency of InGaN material on blue/green light and AlGaInP material on red light through heterogeneous integration and high pixel density through monolithic fabrication approach,demonstrating the feasibility and prospects of high brightness,good color performance,and high-resolution micro-LED microdisplays in future metaverse applications.

关键词： AlGaInP integration matrix

A monolithic InP/SOI platform for integrated photonics

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Light(Science & Applications) 2021年第11期10卷 2143-2152页

作者： Zhao Yan Yu Han Liying Lin Ying Xue Chao Ma Wai Kit Ng Kam Sing Wong kei may lau Department of Electronic and Computer Engineering Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina Department of Physics and William Mong Institute of Nano Science and Technology Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina

The deployment of photonic integrated circuits(PICs)necessitates an integration platform that is scalable,high-throughput,cost-effective,and *** we present a monolithic InP on SOI platform to synergize the advantages of two mainstream photonic integration platforms:Si photonics and InP *** monolithic InP/SOI platform is realized through the selective growth of both InP sub-micron wires and large dimension InP membranes on industry-standard(001)-oriented silicon-on-insulator(SOI)*** epitaxial InP is in-plane,dislocation-free,site-controlled,intimately positioned with the Si device layer,and placed right on top of the buried oxide layer to form“InP-on-insulator”.These attributes allow for the realization of various photonic functionalities using the epitaxial InP,with efficient light interfacing between the III-V devices and the Si-based *** exemplify the potential of this InP/SOI platform for integrated photonics through the demonstration of lasers with different cavity designs including subwavelength wires,square cavities,and *** results here mark a critical step forward towards fully-integrated Si-based PICs.

关键词： SOI monolithic integration

Monolithically integrated high-resolution full-color GaN-on-Si micro-LED microdisplay

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Photonics Research 2023年第1期11卷 109-120页

作者： LONGHENG QI XU ZHANG WING CHEUNG CHONG kei may lau Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyHong KongChina

Full-color micro-LED displays are being widely developed and regarded as a primary option in current microdisplay technologies to fulfill the urgent demands of metaverse applications in the next *** this paper,a monolithic full-color micro-LED microdisplay with a resolution of 423 pixels per inch is demonstrated through the integration of a blue GaN-on-Si display module and a quantum dots photoresist(QDs-PR)color conversion *** 400×240 active-matrix blue micro-LED display with a dominant wavelength of 440 nm was monolithically fabricated using GaN-on-Si epiwafers and flip-chip bonded on a custom-designed complementary metal-oxide semiconductor backplane.A color conversion module was independently fabricated on a *** substrate by applying red and green QDs-PR arrays and a color filter array through the standard lithography *** the blue GaN-on-Si micro-LED display module and the lithography-based QDs-PR color conversion module,a full-color micro-LED display was achieved with a wide color gamut up to 104%of the standard red,green,and blue and a maximum brightness of over 500 *** influence of blue light leakage resulting from the possible misalignment of flip-chip bonding and crosstalk in the bottom GaN-on-Si display was investigated in which the percentages of efficient pumping light for the blue,green,and red subpixels are around95%,89%,and 92%,*** prototype demonstrates potential scalability and low-cost volume production of high-resolution full-color micro-LED microdisplays soon.

关键词： lithography pumping complementary

Comparison of growth structures for continuouswave electrically pumped 1.55 μm quantum dash lasers grown on(001) Si

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Photonics Research 2020年第12期8卷 1888-1894页

作者： WEI LUO YING XUE JIE HUANG LIYING LIN BEI SHI kei may lau Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina

Semiconductor lasers directly grown on silicon offer great potential as critical components in high-volume,lowcost integrated silicon photonics *** InAs/InP quantum dash(QDash)lasers on native InP substrate emitting at 1.5μm(C-band)have demonstrated notable performance,the growth of InAs/InP QDash lasers on silicon remains undeveloped because of the 8%lattice mismatch between InP and *** we report advances of growth techniques leading to the first C-band room-temperature continuous-wave electrically pumped QDash lasers on CMOS standard(001)silicon substrates by metalorganic chemical vapor deposition.A correlation between various material characterizations and device performance is analyzed for different QDash laser structures grown on planar nominal(001)*** the optimized QDash growth and improved fabrication process,the lowest threshold current density of 1.5 kA∕cm^(2) was determined on an 8μm×1.5 mmdevice on planar silicon with a single facet output power exceeding 14 *** device results illustrate the good material quality of the QDash lasers grown on silicon,suggesting potential applications for other active components of photonic integrated circuits,such as semiconductor optical amplifiers,modulators,and photodetectors.

关键词： pumped quantum wave

Room temperature Ⅲ–Ⅴ nanolasers with distributed Bragg reflectors epitaxially grown on(001) silicon-on-insulators

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Photonics Research 2019年第9期7卷 1081-1086页

作者： YU HAN WAI KIT NG YING XUE KAM SING WONG kei may lau Department of Electronic and Computer Engineering Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina Department of Physics and William Mong Institute of Nano Science and Technology Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina

Efficient, scalable, bufferless, and compact Ⅲ–V lasers directly grown on(001)-oriented silicon-on-insulators(SOIs) are preferred light sources in Si-photonics. In this article, we present the design and operation of Ⅲ–V telecom nanolaser arrays with integrated distributed Bragg reflectors(DBRs) epitaxially grown on industry-standard(001) SOI wafers. We simulated the mirror reflectance of different guided modes under various mirror architectures, and accordingly devised nanoscale DBR gratings to support high reflectivity around1500 nm for the doughnut-shaped TE01 mode. Building from InP/InGaAs nanoridges grown on SOI, we fabricated subwavelength DBR mirrors at both ends of the nanoridge laser cavities and thus demonstrated room-temperature low-threshold InP/InGaAs nanolasers with a 0.28 μm^2 cross-section and a 20 μm effective cavity length. The direct growth of these bufferless nanoscale Ⅲ–V light emitters on Si-photonics standard(001) SOI wafers opens future options of fully integrated Si-based nanophotonic integrated circuits in the telecom wavelength regime.

关键词： InGaAs InP SOI nanolasers with distributed Bragg reflectors epitaxially grown on Room temperature silicon-on-insulators Bragg

Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”

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Photonics Research 2020年第5期8卷 750-754页

作者： CHUNYU ZHAO CHAK WAH TANG BILLY LAI GUANGHUI CHENG JIANNONG WANG kei may lau Department of Electronic and Computer Engineering Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina Department of Physics Hong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina

Gallium nitride(Ga N)-based light-emitting diodes(LEDs)are important for lighting and display *** this paper,we demonstrate green-emission(512 nm)In Ga N quantum dot(QD)LEDs grown on a c-plane sapphire substrate by metal-organic chemical vapor deposition.A radiative lifetime of 707 ps for the uniform In Ga N self-assembled QDs is obtained by time-resolved photoluminescence measurement at 18 *** screening of the built-in fields in the QDs effectively improves the performance of QD *** high quantum efficiency and high temperature stability green QD LEDs are able to operate with negligible efficiency droop and with current density up to 106 A∕cm^*** results show that In Ga N QDs may be a viable option as the active medium for stable LEDs.

关键词： diodes sapphire quantum