Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si （111）

作     者：王辉 梁琥 王勇 吴嘉伟 邓冬梅 刘纪美 WANG Hui;LIANG Hu;WANG Yong;NG Kar-Wei;DENG Dong-Mei;LAU Kei-May

作者机构：State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences PO Box 912 Beijing 100083 Photonics Technology Center Electronic and Computer Engineering Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2010年第27卷第3期

页      面：294-296页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 

主　　题：Surfaces interfaces and thin films Condensed matter: structural mechanical & thermal 

摘      要：We report the growth of high quality and crack-free GaN film on Si （111） substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations （TDs） in the overgrown GaN film which leads to a decrease of TD density.