Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”

作     者：CHUNYU ZHAO CHAK WAH TANG BILLY LAI GUANGHUI CHENG JIANNONG WANG KEI MAY LAU 

作者机构：Department of Electronic and Computer EngineeringHong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina Department of PhysicsHong Kong University of Science and TechnologyClear Water BayKowloonHong KongChina 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2020年第8卷第5期

页      面：750-754页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：University Grants Committee(16216017 C6014-16E T23-407/13N-2) 

主　　题：diodes sapphire quantum 

摘      要：Gallium nitride(Ga N)-based light-emitting diodes(LEDs)are important for lighting and display *** this paper,we demonstrate green-emission(512 nm)In Ga N quantum dot(QD)LEDs grown on a c-plane sapphire substrate by metal-organic chemical vapor deposition.A radiative lifetime of 707 ps for the uniform In Ga N self-assembled QDs is obtained by time-resolved photoluminescence measurement at 18 *** screening of the built-in fields in the QDs effectively improves the performance of QD *** high quantum efficiency and high temperature stability green QD LEDs are able to operate with negligible efficiency droop and with current density up to 106 A∕cm^*** results show that In Ga N QDs may be a viable option as the active medium for stable LEDs.