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Two-step growth of β-Ga_(2)O_(3) on c-plane sapphire using MOCVD for solar-blind photodetector

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Journal of Semiconductors 2024年第2期45卷 51-56页

作者： Peipei Ma Jun Zheng Xiangquan Liu Zhi Liu yuhua zuo Buwen Cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane *** buffer layer growth temperature(T_(B))was found at 700℃ and theβ-Ga_(2)O_(3) film with full width at half maximum(FWHM)of 0.66°was achieved.A metal−semiconductor−metal(MSM)solar-blind photodetector(PD)was fabricated based on theβ-Ga_(2)O_(3) *** responsivity of 1422 A/W@254 nm and photo-to-dark current ratio(PDCR)of 10^(6) at 10 V bias were *** detectivity of 2.5×10^(15) Jones proved that the photodetector has outstanding performance in detecting weak ***,the photodetector exhibited superior wavelength selectivity with rejection ratio(R_(250 nm)/R_(400 nm))of *** results indicate that the two-step method is a promising approach for preparation of high-qualityβ-Ga_(2)O_(3)films for high-performance solar-blind photodetectors.

关键词： MOCVD two-step growth β-Ga_(2)O_(3) solar-blind photodetector responsivity

High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system

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Photonics Research 2024年第4期12卷 767-773页

作者： JINLAI CUI JUN ZHENG YUPENG ZHU XIANGQUAN LIU YIYANG WU QINXING HUANG YAZHOU YANG ZHIPENG LIU ZHI LIU yuhua zuo BUWEN CHENG Key Laboratory of Optoelectronic Materials and Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Expanding the optical communication band is one of the most effective methods of overcoming the nonlinear Shannon capacity limit of single *** this study,GeSn resonance cavity enhanced(RCE)photodetectors(PDs)with an active layer Sn component of 9%–10.8%were designed and fabricated on an SOI *** GeSn RCE PDs present a responsivity of 0.49 A/W at 2μm and a 3-dB bandwidth of approximately 40 GHz at 2μ***,Si-based 2μm band optical communication with a transmission rate of 50 Gbps was demonstrated by using a GeSn RCE *** work demonstrates the considerable potential of the Si-based 2μm band photonics in future high-speed and high-capacity optical communication.

关键词： resonance system approximate

Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes

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Tsinghua Science and Technology 2019年第1期24卷 1-8页

作者： Wenzhou Wu Zhi Liu Jun Zheng yuhua zuo Buwen Cheng the State Key Laboratory on Integrated Optoelectronics Institute of Semiconductor Chinese Academy of Sciences the College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences

A novel lateral Ge/Si avalanche photodiode without a charge region is investigated herein using device physical simulation. High field is provided by the band-gap barrier and build-in field at the Ge/Si interface in the vertical direction. Modulating the Si mesa thickness(0-0.4 μm) and impurity concentration of the intrinsic Si substrate(1×10^(16)-4×10^(16)cm^(-3)) strengthens the electric field confinement in the substrate region and provides a high avalanche multiplication in the Si region. When the Si mesa thickness is 0.3 μm, and the impurity concentration of the Si substrate is 2×10^(16) cm^(-3), the Lateral Avalanche PhotoDiode(LAPD) exhibits a peak gain of 246 under 1.55 μm incident light power of -22.2 dBm, which increases with decreasing light intensity.

关键词： avalanche photodiodes lateral structure electric field confinement high gain

Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si_(1-x)Ge_(x) Layer Epitaxied on Si Substrate

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Journal of Materials Science & Technology 2006年第5期22卷 651-654页

作者： Lei ZHAO yuhua zuo Buwen CHENG Jinzhong YU Qiming WANG State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of SciencesBeijing 100083 China

It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction （DCXRD） and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.

关键词： Si1-xGex Ge content Composition determination Double crystals X-ray diffraction (DCXRD) Micro-Raman measurement

Investigation on n-Type(-201)β-Ga_(2)O_(3)Ohmic Contact via Si Ion Implantation

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Tsinghua Science and Technology 2023年第1期28卷 150-154页

作者： Peipei Ma Jun Zheng Yabao Zhang Zhi Liu yuhua zuo Buwen Cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Heavy doped n-typeβ-G_(2)O_(3)(HD-G_(2)O_(3))was obtained by employing Si ion implantation technology on unintentionally dopedβ-G_(2)O_(3)single crystal *** repair the G_(2)O_(3)lattice damage and activate the Si after implantation,the implanted substrates were annealed at 950℃,1000℃,and 1100℃,***-resolution X-ray diffraction and high-resolution transmission electron microscopy show that the ion-implanted layer has high lattice quality after high-temperature annealing at 1000℃.The minimum specific contact resistance is 9.2×10^(-5)Ω·cm^(2),which is attributed to the titanium oxide that is formed at the Ti/G_(2)O_(3)interface via rapid thermal annealing at 480℃.Based on these results,the lateralˇ-G_(2)O_(3)diodes were prepared,and the diodes exhibit high forward current density and low specific on-resistance.

关键词： β-Ga_(2)O_(3) ohmic contact ion implantation annealing activatio

Enhanced Current Transportation in Siliconriched Nitride(SRN)/Silicon-riched Oxide(SRO)Multilayer Nanostructure

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Nano-Micro Letters 2012年第4期4卷 202-207页

作者： Yeliao Tao Jun Zheng yuhua zuo Chunlai Xue Buwen Cheng Qiming Wang State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences

A novel structure of silicon-riched nitride(SRN)/silicon-riched oxide(SRO) is proposed and prepared using RF reactive magnetron co-sputtering. High temperature annealing of SRN/SRO multilayers leads to formation of Si nanocrystals(NC) from isolating SRN and SRO layers simultaneously, which efficiently improves carrier transport ability compared to conventional SRN/Si_3N_4 counterpart. Micro-Raman scattering analysis reveals that SRN layer has dominating number of denser and smaller Si NCs, while SRO layer has relatively less, sparser and bigger Si NCs, as confirmed by high resolution transmission electron microscopy observation. The substitute SRO layers for Si_3N_4 counterparts significantly increase the amount of Si NCs as well as crystallization ratio in SRN layers; while the average Si NC size can be well controlled by the thickness of SRN layers and the content of N, and hence an obvious stronger absorption in UV region for the novel structure can be observed in absorption spectra. The I-V characteristics show that the current of hybrid SRN/SRO system increases up to 2 orders of magnitude at 1 V and even 5 orders of magnitude at 4 V compared to that of SRN/Si_3N_4 structure. Si NCs in Si Oylayers provide a transport pathway for adjacent Si NCs in Si Nxlayers. The obvious advantage in carrier transportation suggests that SRN/SRO hybrid system could be a promising structure and platform to build Si nanostructured solar cells.

关键词： Silicon nanostructure Magnetron sputtering Raman Spectroscopy Charge transport

A Dual-Task Learning Approach for Bearing Anomaly Detection and State Evaluation of Safe Region

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Chinese Journal of Mechanical Engineering 2024年第1期37卷 229-241页

作者： yuhua Yin Zhiliang Liu Bin Guo Mingjian zuo School of Mechanical and Electrical Engineering University of Electronic Science and Technology of ChinaChengdu 611731China Qingdao International Academician Park Research Institute Qingdao 266041China

Predictive maintenance has emerged as an effective tool for curbing maintenance costs,yet prevailing research predominantly concentrates on the abnormal *** the ostensibly stable healthy phase,the reliance on anomaly detection to preempt equipment malfunctions faces the challenge of sudden anomaly *** address this challenge,this paper proposes a dual-task learning approach for bearing anomaly detection and state evaluation of safe *** proposed method transforms the execution of the two tasks into an optimization issue of the hypersphere *** leveraging the monotonicity and distinguishability pertinent to the tasks as the foundation for optimization,it reconstructs the SVDD model to ensure equilibrium in the model’s performance across the two *** experiments verify the proposed method’s effectiveness,which is interpreted from the perspectives of parameter adjustment and enveloping *** the meantime,experimental results also show two deficiencies in anomaly detection accuracy and state evaluation *** theoretical analysis inspires us to focus on feature extraction and data collection to achieve *** proposed method lays the foundation for realizing predictive maintenance in a healthy stage by improving condition awareness in safe regions.

关键词： Bearing condition monitoring Anomaly detection Safe region Support vector data description

Effect of Chloride Ion Concentrations on Luminescence Peak Blue Shift of Light-Emitting Diode Using Anti-Solvent Extraction of Quasi-Two-Dimensional Perovskite

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Tsinghua Science and Technology 2021年第4期26卷 496-504页

作者： Baoyu Liu Xiaoping Zou Dan Chen Taoran Liu yuhua zuo Jun Zheng Zhi Liu Buwen Cheng Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for SensorMOE Key Laboratory for Modern Measurement and Control TechnologyBeijing Information Science and Technology UniversityBeijing 100101China the State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

In recent years,Perovskite Light-Emitting Diodes(PeLEDs)have received considerable attention in ***,with the development of PeLEDs,commercial applications of full-color PeLED technology are largely limited by the progress of blue-emitting devices,due to the uncontrollably accurate composition,unstable properties,and low *** this article,we add Cesium chloride(CsCl)to the quasi-two-dimensional(quasi-2D)perovskite precursor solution and achieve the relatively blue shifts of PeLED emission peak by introducing chloride ions for photoluminescence(PL)and electroluminescence(EL).We also found that the introduction of chlorine ions can make quasi-2D perovskite films thinner with smoother surface of 0.408 *** is interesting that the EL peaks and intensities of PeLED are adjustable under different driving voltages in high concentration chlorine-added perovskite devices,and different processes of photo-excited,photo-quenched,and photo-excited occur sequentially with the increasing driving *** work provides a path for demonstrating full-color screens in the future.

关键词： Perovskite Light-Emitting Diodes(PeLEDs) quasi-two-dimensional(quasi-2D) chloride ions blue shifts

Brightness and Lifetime Improved Light-Emitting Diodes from Sr-Doped Quasi-Two-Dimensional Perovskite Layers

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Tsinghua Science and Technology 2023年第1期28卷 131-140页

作者： Dan Chen Taoran Liu yuhua zuo Chuanbo Li Jun Zheng Zhi Liu Baoyu Liu Buwen Cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Science Minzu University of ChinaBeijing 100081China Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for SensorMOE Key Laboratory for Modern Measurement and Control Technologyand Beijing Information Science and Technology UniversityBeijing 100101China

Green Perovskite Light-Emitting Diodes(PeLEDs)have attracted wide attention for full spectrum ***,the inferior film morphology and luminescence property of quasi-two-dimensional(quasi-2D)perovskite layers limit the photoelectric property of the *** this paper,the effect of strontium(Sr)doped in quasi-2D perovskite layers is investigated to obtain a high-quality active *** morphologies and optical properties of Sr-doped quasi-2D perovskite films with different concentrations are *** the addition of strontium,more low-dimensional-layer perovskite phases(n D 2 and n D 3)appear in quasi-2D perovskite films,providing efficient intraband carrier funneling pathway and facilitating radiative *** photoluminescence(PL)peak intensity of optimized Sr-doped quasi-2D perovskite layers increases 50%compared with the non-strontium ***,green PeLEDs based on a Sr-doped quasi-2D perovskite layer reach a maximum luminance(Lmax)of 2943.77 cd/m^(2),which is three times of the control *** electroluminescence(EL)peaks of Maximum External Quantum Efficiency(MEQE)and Lmax of Sr-doped PeLEDs exhibite a slight shift,indicating the excellent stability and performance of Sr-doped *** optimized device can continuously operate for 360 s at MEQE driving voltage,resulting in a half-lifetime of60 s,which is 3-fold greater than that of the control PeLEDs.

关键词： Perovskite Light-Emitting Diodes(PeLED) Sr-doped brightness improved lifetime increased