Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si_(1-x)Ge_(x) Layer Epitaxied on Si Substrate

作     者：Lei ZHAO Yuhua ZUO Buwen CHENG Jinzhong YU Qiming WANG 

作者机构：State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of SciencesBeijing 100083 China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2006年第22卷第5期

页      面：651-654页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 08[工学] 070302[理学-分析化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0802[工学-机械工程] 0801[工学-力学（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：This work is supported by the National Natural Science Foundation of China (Grant Nos. 60336010 & 90401001) 973 Program (Grant No. TG 2000036603) the Student Innovation Program of CAS (No. 1731000500010) 

主　　题：Si1-xGex Ge content Composition determination Double crystals X-ray diffraction (DCXRD) Micro-Raman measurement 

摘      要：It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction （DCXRD） and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.