Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes

作     者：Wenzhou Wu Zhi Liu Jun Zheng Yuhua Zuo Buwen Cheng 

作者机构：the State Key Laboratory on Integrated Optoelectronics Institute of Semiconductor Chinese Academy of Sciences the College of Materials Science and Opto-Electronic TechnologyUniversity of Chinese Academy of Sciences 

出 版 物：《Tsinghua Science and Technology》 (清华大学学报（自然科学版（英文版）)

年 卷 期：2019年第24卷第1期

页      面：1-8页

核心收录：

学科分类：07[理学] 08[工学] 

基　　金：supported in part by the National Natural Science Foundation of China (No. 61534005) Natural Science Foundation of Beijing Municipality (No. 4162063) 

主　　题：avalanche photodiodes lateral structure electric field confinement high gain 

摘      要：A novel lateral Ge/Si avalanche photodiode without a charge region is investigated herein using device physical simulation. High field is provided by the band-gap barrier and build-in field at the Ge/Si interface in the vertical direction. Modulating the Si mesa thickness(0-0.4 μm) and impurity concentration of the intrinsic Si substrate(1×10^(16)-4×10^(16)cm^(-3)) strengthens the electric field confinement in the substrate region and provides a high avalanche multiplication in the Si region. When the Si mesa thickness is 0.3 μm, and the impurity concentration of the Si substrate is 2×10^(16) cm^(-3), the Lateral Avalanche PhotoDiode(LAPD) exhibits a peak gain of 246 under 1.55 μm incident light power of -22.2 dBm, which increases with decreasing light intensity.