Two-step growth of β-Ga_(2)O_(3) on c-plane sapphire using MOCVD for solar-blind photodetector

作     者：Peipei Ma Jun Zheng Xiangquan Liu Zhi Liu Yuhua Zuo Buwen Cheng Peipei Ma;Jun Zheng;Xiangquan Liu;Zhi Liu;Yuhua Zuo;and Buwen Cheng

作者机构：State Key Laboratory on Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2024年第45卷第2期

页      面：51-56页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work was supported by the National Key Research and Development Program of China(Grant No.2020YFB2206103) 

主　　题：MOCVD two-step growth β-Ga_(2)O_(3) solar-blind photodetector responsivity 

摘      要：In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane *** buffer layer growth temperature(T_(B))was found at 700℃ and theβ-Ga_(2)O_(3) film with full width at half maximum(FWHM)of 0.66°was achieved.A metal−semiconductor−metal(MSM)solar-blind photodetector(PD)was fabricated based on theβ-Ga_(2)O_(3) *** responsivity of 1422 A/W@254 nm and photo-to-dark current ratio(PDCR)of 10^(6) at 10 V bias were *** detectivity of 2.5×10^(15) Jones proved that the photodetector has outstanding performance in detecting weak ***,the photodetector exhibited superior wavelength selectivity with rejection ratio(R_(250 nm)/R_(400 nm))of *** results indicate that the two-step method is a promising approach for preparation of high-qualityβ-Ga_(2)O_(3)films for high-performance solar-blind photodetectors.