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Dual‑Performance Optimized Silks from Ultra‑Low Dose Polymer Dots Feeding and Its Absorption, Distribution and Excretion in the Silkworms

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Advanced Fiber Materials 2022年第4期4卷 845-858页

作者： Jingru Li Yuqiao Li Shuting Lu Juxiang zhang chunfu zhang Liqin Xiong Shanghai Med‑X Engineering Center for Medical Equipment and Technology School of Biomedical EngineeringShanghai Jiao Tong UniversityShanghai 200030People’s Republic of China

Fluorescent polymer dots(Pdots)have the advantages of excellent optical properties,great biocompatibility and high ***,we feed ultra-low doses Pdots to silkworms for the first time and aim to prepare dual-performance modified *** Pdots feeding,the fluorescence signal of cocoons and degummed silks increases significantly,which is more stable and more uniform than that of post-treatment ***,Pdots hinder the conformation transformation of silk fibroin and improve the mechanical property of twisted silk *** highest elongation at break point is 20.75±0.03% and breaking strength is 271.7±3.8 *** excellent fluorescence and mechanical properties,the optimized silks are successfully applied as a scaffold for cell culture and ***,we investigate the metabolism of Pdots in the silkworms for understanding the behaviours of Pdots in the process of silks synthesis and secretion.

关键词： Polymer dots Fluorescence imaging Fluorescent silks Mechanical property Toxicity

Interfacial Voids Trigger Carbon-Based, All-Inorganic Cs Pb IBr2 Perovskite Solar Cells with Photovoltage Exceeding 1.33 V

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Nano-Micro Letters 2020年第7期12卷 121-134页

作者： Weidong Zhu Zeyang zhang Dandan Chen Wenming Chai Dazheng Chen Jincheng zhang chunfu zhang Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology and Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi’an 710071People’s Republic of China College of Science Xi’an Shiyou UniversityXi’an 710065ShaanxiPeople’s Republic of China

A novel interface design is proposed for carbon-based,all-inorganic CsPbIBr2 perovskite solar cells(PSCs)by introducing interfacial voids between TiO2 electron transport layer and CsPbIBr2 *** with the general interfacial engineering strategies,this design exempts any extra modification layer in final *** importantly,the interfacial voids produced by thermal decomposition of 2-phenylethylammonium iodide trigger three beneficial e ***,they promote the light scattering in CsPbIBr2 film and thereby boost absorption ability of the resulting CsPbIBr2 ***,they suppress recombination of charge carriers and thus reduce dark saturation current density(J0)of the ***,interfacial voids enlarge built-in potential(Vbi)of the PSCs,awarding increased driving force for dissociating photo-generated charge ***,the PSC yields the optimized e ciency of 10.20%coupled with an open-circuit voltage(Voc)of 1.338 *** Voc achieved herein represents the best value among CsPbIBr2 PSCs reported ***,the non-encapsulated PSCs exhibit an excellent stability against light,thermal,and humidity stresses,since it remains^97%or^94%of its initial e ciency after being heated at 85℃for 12 h or stored in ambient atmosphere with relative humidity of 30–40%for 60 days,respectively.

关键词： All-inorganic perovskite solar cells Cs Pb IBr2 Photovoltage Interfacial engineering Stability

Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells

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Research 2024年第2期2023卷 181-190页

作者： Wenming Chai Lindong Li Weidong Zhu Dazheng Chen Long Zhou He Xi Jincheng zhang chunfu zhang Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology&Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi'anShaanxi 710071China Xi'an Baoxin Solar Technology Co. Ltd.Xi'an710071China

Wide-bandgap(WBG)perovskite solar cells(PSCs)are essential for highly efficient and stable silicon/perovskite tandem solar *** this study,we adopted a synthetic strategy with lead thiocyanate(Pb(SCN)_(2))additive and methylammonium chloride(MACl)posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 *** excessive PbI_(2)was formed at grain boundaries and converted into MAPbI_(3-x)Cl_(x)perovskites,which are utilized to form the graded heterojunction(GHJ)and compressive *** is beneficial for passivating nonradiative recombination defects,suppressing halide phase segregation,and facilitating carrier ***,the device with GHJ delivered a champion efficiency of 20.30%and superior stability in ambient air and under 85℃.Finally,we achieved a recorded efficiency of 30.91%for 4-terminal WBG perovskite/TOPCon tandem silicon solar *** findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ.

关键词： perovskite Graded Highly

Ultrahigh fill-factor all-inorganic CsPbBr_(3)perovskite solar cells processed from two-step solution method and solvent additive strategy

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Journal of Materiomics 2023年第4期9卷 717-724页

作者： Dazheng Chen Yibing He Gang Fan Zeyang zhang Weidong Zhu He Xi Long Zhou chunfu zhang Jincheng zhang Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology&Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi'anShaanxi710071China

All-inorganic CsPbBr_(3)perovskite solar cells(PSCs)have attracted more attentions due to the excellent environmental stability,however,the wide bandgap and relatively poor crystallinity of CsPbBr_(3)have been the main obstacle to improve their power conversion efficiency(PCE).Herein,we proposed an efficient and simple strategy of precursor additive in the two-step aqueous-solution method,the resulted CsPbBr_(3)film has achieved more uniform grain size,almost pure perovskite phase,smoother surface,less defects,enhanced light absorption and longer carrier *** is due to the rapid evaporation of additive(IPA and CH_(3)OH)in the CsBr/H_(2)O precursor leads to a relatively higher local CsBr concentration on the surface of PbBr_(2),which can provide more nucleation sites and accelerate the crystallization of ***,when utilizing the optimal additive of 5%(in volume)IPA,the HTM-free carbonbased CsPbBr_(3)PSCs obtained a PCE improvement from 9.09%to 10.29%,and an ultrahigh fill factor(FF)of 85.21%.What is more,by adding 0.1 mol/L PbCl_(2)into the PbBr_(2)solution in the first step,the open circuit voltage of device has increased from 1.36 V to 1.48 V,the champion PCE reached 10.37%(steady output PCE of 10.17%),and the non-encapsulated device could maintain 85%of its initial efficiency after 50 d in the *** work provides a cost-effective approach to grow CsPbBr_(3)film and boosts the efficiency benchmark of the CsPbBr_(3)PSCs to more than 10%,it is desirable that the highly efficient and stable CsPbBr_(3)PSCs can be developed in future.

关键词： CsPbBr_(3) Aqueous solution Two-step method Solvent additive High fill factor

Accelerated Sequential Deposition Reaction via Crystal Orientation Engineering for Low-Temperature,High-Efficiency Carbon-Electrode CsPbBr_(3) Solar Cells

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Energy & Environmental Materials 2024年第1期7卷 168-175页

作者： Zeyang zhang Weidong Zhu Tianjiao Han Tianran Wang Wenming Chai Jiaduo Zhu He Xi Dazheng Chen Gang Lu Peng Dong Jincheng zhang chunfu zhang Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology&Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi'an 710071China Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou institute of technologyXidian UniversityGuangzhou 510555China Qinghai Huanghe Hydropower Development CO. LTD.Xining810008China

Low-temperature,ambient processing of high-quality CsPbBr_(3)films is demanded for scalable production of efficient,low-cost carbon-electrode perovskite solar cells(PSCs).Herein,we demonstrate a crystal orientation engineering strategy of PbBr_(2)precursor film to accelerate its reaction with CsBr precursor during two-step sequential deposition of CsPbBr_(3)*** a novel strategy is proceeded by adding CsBr species into PbBr_(2)precursor,which can tailor the preferred crystal orientation of PbBr_(2)film from[020]into[031],with CsBr additive staying in the film as CsPb_(2)Br_(5)*** calculations show that the reaction energy barrier of(031)planes of PbBr_(2)with CsBr is lower about 2.28 eV than that of(O2O)***,CsPbBr_(3)films with full coverage,high purity,high crystallinity,micro-sized grains can be obtained at a low temperature of 150℃.Carbon-electrode PSCs with these desired CsPbBr_(3)films yield the record-high efficiency of 10.27%coupled with excellent operation ***,the 1 cm^(2)area one with the superior efficiency of 8.00%as well as the flexible one with the champion efficiency of 8.27%and excellent mechanical bending characteristics are also achieved.

关键词： carbon-electrode perovskite solar cells crystal orientation engineering CsPbBr_(3) low temperature two-step sequential deposition

Research on the hydrogen terminated single crystal diamond MOSFET with MoO_3 dielectric and gold gate metal

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Journal of Semiconductors 2018年第7期39卷 72-76页

作者： Zeyang Ren Jinfeng zhang Jincheng zhang chunfu zhang Pengzhi Yang Dazheng Chen Yao Li Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University

The single crystal diamond with maximum width about 10 mm has been grown by using microwave plasma chemical vapor deposition equipment. The quality of the grown diamond was characterized using an X-ray diffractometer. The FWHM of the（004） rocking curve is 37.91 arcsec, which is comparable to the result of the electronic grade single crystal diamond commercially obtained from Element Six Ltd. The hydrogen terminated diamond field effect transistors with Au/Mo03 gates were fabricated based on our CVD diamond and the characteristics of the device were compared with the prototype Al/MoO3 gate. The device with the Au/MoO3 gate shows lower on-resistance and higher gate leakage current. The detailed analysis indicates the presence of aluminum oxide at the Al/MoO3 interface, which has been directly demonstrated by characterizing the interface between A1 and MoO3 by X-ray photoelectron spectroscopy. In addition, there should be a surface transfer doping effect of the MoO3 layer on H-diamond even with the atmospheric-adsorbate induced 2 DHG preserved after MoO3 deposition.

关键词： single crystal diamond MOSFET MoO3 transfer doping

Human iPS Cells Loaded with MnO2-Based Nanoprobes for Photodynamic and Simultaneous Enhanced Immunotherapy Against Cancer

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Nano-Micro Letters 2020年第10期12卷 36-52页

作者： Yanlei Liu Jingxing Yang Bin Liu Wen Cao Jingpu zhang Yuming Yang Lijun Ma Jesus Martinez de la Fuente Jie Song Jian Ni chunfu zhang Daxiang Cui Institute of Nano Biomedicine and Engineering Key Laboratory for Thin Film and Microfabrication of Ministration of EducationShanghai Engineering Research Centre for Intelligent Diagnosis and Treatment InstrumentDepartment of Instrument Science and EngineeringSchool of Electronic Information and Electrical EngineeringShanghai Jiao Tong University800 Dongchuan RoadShanghai 200240People’s Republic of China National Engineering Center for Nanotechnology Shanghai 200240People’s Republic of China Department of Nuclear Medicine Rui Jin HospitalSchool of Biomedical EngineeringShanghai Jiao Tong UniversityShanghai 200240People’s Republic of China Scientific Research Center Shanghai Public Health Clinical CenterFudan UniversityShanghai 201508People’s Republic of China Tongren Hospital Shanghai Jiao Tong University School of Medicine1111 XianXia RoadShanghai 200336People’s Republic of China

How to trigger strong anti-tumor immune responses has become a focus for tumor ***,we report the human-induced pluripotent stem cells(iPSs)to deliver MnO2@Ce6 nanoprobes into tumors for simultaneous photodynamic therapy(PDT)and enhanced ***6 photosensitizer was attached on manganese dioxide(MnO2)nanoparticles,and resultant MnO2@Ce6 nanoprobes were delivered into mitomycin-treated iPSs to form iPS-MnO2@Ce6 *** iPS-MnO2@Ce6 actively targeted in vivo tumors,the acidic microenvironment triggered interaction between MnO2 and H2O2,released large quantities of oxygen,alleviated hypoxia in *** PDT,singlet oxygen formed,broken iPSs released tumor-shared antigens,which evoked an intensive innate and adaptive immune response against the tumor,improving dendritic cells matured,effector T cells,and natural killer cells were ***,regulatory T cells were reduced,and then the immune response induced by iPS-MnO2@Ce6 was markedly stronger than the immune reaction induced by MnO2@Ce6(P<0.05).The iPS-MnO2@Ce6 markedly inhibited tumor growth and metastasis and reduced mortality in mice models with *** iPS s loaded with MnO2-based nanoprobes are a promising strategy for simultaneous PDT and enhanced immunotherapy against tumor and own clinical translational prospect.

关键词： Human iPS MnO2@Ce6 nanoprobes Photodynamic therapy Immunotherapy Cancer

Unidirectional p-GaN gate HEMT with composite source-drain field plates

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Science China(Information Sciences) 2022年第2期65卷 265-266页

作者： Haiyong WANG Wei MAO Shenglei ZHAO Yuanhao HE Jiabo CHEN Ming DU Xuefeng ZHENG Chong WANG chunfu zhang Jincheng zhang Yue HAO Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University

Dear editor,Ga N-on-Si high electron mobility transistors (HEMTs) have attracted attention for power device applications due to their low cost and large-area availability[1].Recently,bidirectional switches are highly desirable in many industrial bidirectional power conversion applications,such as rolling mills,elevators,and wind power *** addition,normally-off unidirectional HEMTs can be valuable devices to implement the high-performance bidirectional switches[2,3].

关键词： Nano CMOS ESD Reliability Hot-carrier Charge trapping

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Physics based circuit compatible model for hybrid antiferroelectric random access memory

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Science China(Information Sciences) 2024年

作者： Qiuxia WU Yue PENG Wenwu XIAO Wenxuan MA Shuo zhang Litao SUN chunfu zhang Xiaohua MA Yue HAO School of Microelectronics Xidian University Xi'an UniI C Semiconductors

Since the discovery of HfO2-based ferroelectric (FE) materials in 2011, considerable advancements have been made in material preparation, mechanism research, and device realization [1]. Consequently, these materials a...

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