Research on the hydrogen terminated single crystal diamond MOSFET with MoO_3 dielectric and gold gate metal

作     者：Zeyang Ren Jinfeng Zhang Jincheng Zhang Chunfu Zhang Pengzhi Yang Dazheng Chen Yao Li Yue Hao 

作者机构：State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2018年第39卷第7期

页      面：72-76页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 081702[工学-化学工艺] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

主　　题：single crystal diamond MOSFET MoO3 transfer doping 

摘      要：The single crystal diamond with maximum width about 10 mm has been grown by using microwave plasma chemical vapor deposition equipment. The quality of the grown diamond was characterized using an X-ray diffractometer. The FWHM of the（004） rocking curve is 37.91 arcsec, which is comparable to the result of the electronic grade single crystal diamond commercially obtained from Element Six Ltd. The hydrogen terminated diamond field effect transistors with Au/Mo03 gates were fabricated based on our CVD diamond and the characteristics of the device were compared with the prototype Al/MoO3 gate. The device with the Au/MoO3 gate shows lower on-resistance and higher gate leakage current. The detailed analysis indicates the presence of aluminum oxide at the Al/MoO3 interface, which has been directly demonstrated by characterizing the interface between A1 and MoO3 by X-ray photoelectron spectroscopy. In addition, there should be a surface transfer doping effect of the MoO3 layer on H-diamond even with the atmospheric-adsorbate induced 2 DHG preserved after MoO3 deposition.