Unidirectional p-GaN gate HEMT with composite source-drain field plates

作     者：Haiyong WANG Wei MAO Shenglei ZHAO Yuanhao HE Jiabo CHEN Ming DU Xuefeng ZHENG Chong WANG Chunfu ZHANG Jincheng ZHANG Yue HAO Hei WONG;Shurong DONG;Zehua CHEN

作者机构：Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of Microelectronics Xidian University 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2022年第65卷第2期

页      面：265-266页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported in part by the Key Research and Development Program of Shaanxi (Grant No. 2020ZDLGY03-05) Key-Area Resarch and Development Program of Guangdong Province (Grant No. 2020B010174001) National Natural Science Foundation of China (Grant Nos. 61574112, 61974115) 

主　　题：Nano CMOS ESD Reliability Hot-carrier Charge trapping 

摘      要：Dear editor,Ga N-on-Si high electron mobility transistors (HEMTs) have attracted attention for power device applications due to their low cost and large-area availability[1].Recently,bidirectional switches are highly desirable in many industrial bidirectional power conversion applications,such as rolling mills,elevators,and wind power *** addition,normally-off unidirectional HEMTs can be valuable devices to implement the high-performance bidirectional switches[2,3].