Ultrahigh fill-factor all-inorganic CsPbBr_(3)perovskite solar cells processed from two-step solution method and solvent additive strategy
作者机构:State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology&Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian UniversityXi'anShaanxi710071China
出 版 物:《Journal of Materiomics》 (无机材料学学报(英文))
年 卷 期:2023年第9卷第4期
页 面:717-724页
核心收录:
学科分类:081704[工学-应用化学] 07[理学] 070304[理学-物理化学(含∶化学物理)] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学]
基 金:the National Natural Science Foundation of China under Grants 62004151,62274126 and 62204189 the Special Financial Grant from the China Postdoctoral Science Foundation under Grant 2020T130490 Young Talent Fund of Association for Science and Technology in Shaanxi under Grant 20220115 Fundamental Research Funds for the National 111 Center
主 题:CsPbBr_(3) Aqueous solution Two-step method Solvent additive High fill factor
摘 要:All-inorganic CsPbBr_(3)perovskite solar cells(PSCs)have attracted more attentions due to the excellent environmental stability,however,the wide bandgap and relatively poor crystallinity of CsPbBr_(3)have been the main obstacle to improve their power conversion efficiency(PCE).Herein,we proposed an efficient and simple strategy of precursor additive in the two-step aqueous-solution method,the resulted CsPbBr_(3)film has achieved more uniform grain size,almost pure perovskite phase,smoother surface,less defects,enhanced light absorption and longer carrier *** is due to the rapid evaporation of additive(IPA and CH_(3)OH)in the CsBr/H_(2)O precursor leads to a relatively higher local CsBr concentration on the surface of PbBr_(2),which can provide more nucleation sites and accelerate the crystallization of ***,when utilizing the optimal additive of 5%(in volume)IPA,the HTM-free carbonbased CsPbBr_(3)PSCs obtained a PCE improvement from 9.09%to 10.29%,and an ultrahigh fill factor(FF)of 85.21%.What is more,by adding 0.1 mol/L PbCl_(2)into the PbBr_(2)solution in the first step,the open circuit voltage of device has increased from 1.36 V to 1.48 V,the champion PCE reached 10.37%(steady output PCE of 10.17%),and the non-encapsulated device could maintain 85%of its initial efficiency after 50 d in the *** work provides a cost-effective approach to grow CsPbBr_(3)film and boosts the efficiency benchmark of the CsPbBr_(3)PSCs to more than 10%,it is desirable that the highly efficient and stable CsPbBr_(3)PSCs can be developed in future.