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High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system

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Photonics Research 2024年第4期12卷 767-773页

作者： JINLAI CUI JUN ZHENG YUPENG ZHU XIANGQUAN LIU YIYANG WU QINXING HUANG YAZHOU YANG ZHIPENG LIU ZHI LIU YUHUA ZUO buwen cheng Key Laboratory of Optoelectronic Materials and Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Expanding the optical communication band is one of the most effective methods of overcoming the nonlinear Shannon capacity limit of single *** this study,GeSn resonance cavity enhanced(RCE)photodetectors(PDs)with an active layer Sn component of 9%–10.8%were designed and fabricated on an SOI *** GeSn RCE PDs present a responsivity of 0.49 A/W at 2μm and a 3-dB bandwidth of approximately 40 GHz at 2μ***,Si-based 2μm band optical communication with a transmission rate of 50 Gbps was demonstrated by using a GeSn RCE *** work demonstrates the considerable potential of the Si-based 2μm band photonics in future high-speed and high-capacity optical communication.

关键词： resonance system approximate

Two-step growth of β-Ga_(2)O_(3) on c-plane sapphire using MOCVD for solar-blind photodetector

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Journal of Semiconductors 2024年第2期45卷 51-56页

作者： Peipei Ma Jun Zheng Xiangquan Liu Zhi Liu Yuhua Zuo buwen cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane *** buffer layer growth temperature(T_(B))was found at 700℃ and theβ-Ga_(2)O_(3) film with full width at half maximum(FWHM)of 0.66°was achieved.A metal−semiconductor−metal(MSM)solar-blind photodetector(PD)was fabricated based on theβ-Ga_(2)O_(3) *** responsivity of 1422 A/W@254 nm and photo-to-dark current ratio(PDCR)of 10^(6) at 10 V bias were *** detectivity of 2.5×10^(15) Jones proved that the photodetector has outstanding performance in detecting weak ***,the photodetector exhibited superior wavelength selectivity with rejection ratio(R_(250 nm)/R_(400 nm))of *** results indicate that the two-step method is a promising approach for preparation of high-qualityβ-Ga_(2)O_(3)films for high-performance solar-blind photodetectors.

关键词： MOCVD two-step growth β-Ga_(2)O_(3) solar-blind photodetector responsivity

A new 3-dB bandwidth record of Ge photodiode on Si

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Journal of Semiconductors 2022年第6期43卷 6-7页

作者： Zhi Liu Chuanbo Li buwen cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Optoelectronic Technology University of Chinese Academy of SciencesBeijing 100049China School of Science Optoelectronic Research CenterMinzu University of ChinaBeijing 100081China

Si photonics is a promising technological approach to realize a photonic integrated circuits on Si substrate with small footprint,high performance,low cost,and being highly compatible with Si complementary metal oxide semiconductor(CMOS)technology[1].Because of good compatibility of Si and the relatively high absorption coefficient in the near-infrared region,Ge waveguide photodiode on Si is almost the only option for optical receiving in Si photonic integrated *** a high performance Ge photodiode,the critical parameters are optical responsivity,3-dB bandwidth,and dark current.

关键词： waveguide complementary compatibility

Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes

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Tsinghua Science and Technology 2019年第1期24卷 1-8页

作者： Wenzhou Wu Zhi Liu Jun Zheng Yuhua Zuo buwen cheng the State Key Laboratory on Integrated Optoelectronics Institute of Semiconductor Chinese Academy of Sciences the College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences

A novel lateral Ge/Si avalanche photodiode without a charge region is investigated herein using device physical simulation. High field is provided by the band-gap barrier and build-in field at the Ge/Si interface in the vertical direction. Modulating the Si mesa thickness(0-0.4 μm) and impurity concentration of the intrinsic Si substrate(1×10^(16)-4×10^(16)cm^(-3)) strengthens the electric field confinement in the substrate region and provides a high avalanche multiplication in the Si region. When the Si mesa thickness is 0.3 μm, and the impurity concentration of the Si substrate is 2×10^(16) cm^(-3), the Lateral Avalanche PhotoDiode(LAPD) exhibits a peak gain of 246 under 1.55 μm incident light power of -22.2 dBm, which increases with decreasing light intensity.

关键词： avalanche photodiodes lateral structure electric field confinement high gain

Investigation on n-Type(-201)β-Ga_(2)O_(3)Ohmic Contact via Si Ion Implantation

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Tsinghua Science and Technology 2023年第1期28卷 150-154页

作者： Peipei Ma Jun Zheng Yabao Zhang Zhi Liu Yuhua Zuo buwen cheng State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Heavy doped n-typeβ-G_(2)O_(3)(HD-G_(2)O_(3))was obtained by employing Si ion implantation technology on unintentionally dopedβ-G_(2)O_(3)single crystal *** repair the G_(2)O_(3)lattice damage and activate the Si after implantation,the implanted substrates were annealed at 950℃,1000℃,and 1100℃,***-resolution X-ray diffraction and high-resolution transmission electron microscopy show that the ion-implanted layer has high lattice quality after high-temperature annealing at 1000℃.The minimum specific contact resistance is 9.2×10^(-5)Ω·cm^(2),which is attributed to the titanium oxide that is formed at the Ti/G_(2)O_(3)interface via rapid thermal annealing at 480℃.Based on these results,the lateralˇ-G_(2)O_(3)diodes were prepared,and the diodes exhibit high forward current density and low specific on-resistance.

关键词： β-Ga_(2)O_(3) ohmic contact ion implantation annealing activatio

Comparison between Double Crystals X-ray Diffraction and Micro-Raman Measurement on Composition Determination of High Ge Content Si_(1-x)Ge_(x) Layer Epitaxied on Si Substrate

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Journal of Materials Science & Technology 2006年第5期22卷 651-654页

作者： Lei ZHAO Yuhua ZUO buwen cheng Jinzhong YU Qiming WANG State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of SciencesBeijing 100083 China

It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction （DCXRD） and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.

关键词： Si1-xGex Ge content Composition determination Double crystals X-ray diffraction (DCXRD) Micro-Raman measurement

Enhanced Current Transportation in Siliconriched Nitride(SRN)/Silicon-riched Oxide(SRO)Multilayer Nanostructure

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Nano-Micro Letters 2012年第4期4卷 202-207页

作者： Yeliao Tao Jun Zheng Yuhua Zuo Chunlai Xue buwen cheng Qiming Wang State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences

A novel structure of silicon-riched nitride(SRN)/silicon-riched oxide(SRO) is proposed and prepared using RF reactive magnetron co-sputtering. High temperature annealing of SRN/SRO multilayers leads to formation of Si nanocrystals(NC) from isolating SRN and SRO layers simultaneously, which efficiently improves carrier transport ability compared to conventional SRN/Si_3N_4 counterpart. Micro-Raman scattering analysis reveals that SRN layer has dominating number of denser and smaller Si NCs, while SRO layer has relatively less, sparser and bigger Si NCs, as confirmed by high resolution transmission electron microscopy observation. The substitute SRO layers for Si_3N_4 counterparts significantly increase the amount of Si NCs as well as crystallization ratio in SRN layers; while the average Si NC size can be well controlled by the thickness of SRN layers and the content of N, and hence an obvious stronger absorption in UV region for the novel structure can be observed in absorption spectra. The I-V characteristics show that the current of hybrid SRN/SRO system increases up to 2 orders of magnitude at 1 V and even 5 orders of magnitude at 4 V compared to that of SRN/Si_3N_4 structure. Si NCs in Si Oylayers provide a transport pathway for adjacent Si NCs in Si Nxlayers. The obvious advantage in carrier transportation suggests that SRN/SRO hybrid system could be a promising structure and platform to build Si nanostructured solar cells.

关键词： Silicon nanostructure Magnetron sputtering Raman Spectroscopy Charge transport

56 Gbps high-speed Ge electro-absorption modulator

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Photonics Research 2020年第10期8卷 1648-1652页

作者： ZHI LIU XIULI LI CHAOQUN NIU JUN ZHENG CHUNLAI XUE YUHUA ZUO buwen cheng State Key Laboratory on integrated Optoelectronics lnstitute of SermiconductorsChinese Academy of SciencesBeljing 100083China Center of Matenials Science and Optoelectronics Engineering Udniversity of Chinese Academy of SciencesBeljing 100049china Beijing Academy of Quanturm inaformation Sciences Beijing T00193China

A high-speed evanescent-coupled Ge waveguide electro-absorption modulator(EAM)with simple fabrication processes was realized on a silicon-on-insulator platform with a 220 nm top Si *** grown Ge with a triangle shape was directly used for Ge waveguides of the *** asymmetric p-i-n junction was designed in the Ge waveguide to provide a strong electric field for Franz-Keldysh *** insertion loss of the Ge EAM was 6.2 dB at 1610 *** EAM showed the high electro-optic bandwidth of 36 GHz at-1 *** open 56 Gbps eye diagrams were observed at 1610 nm with a dynamic extinction ratio of 2.7 dB and dynamic power consumption of 45 fJ/bit for voltage swing of 3Vpp.

关键词： modulator waveguide absorption

25 × 50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating

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Photonics Research 2019年第6期7卷 659-663页

作者： ZHI LIU JIASHUN ZHANG XIULI LI LIANGLIANG WANG JIANGUANG LI CHUNLAI XUE JUNMING AN buwen cheng State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of SciencesBeijing 100083 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049 China

A high-performance monolithic integrated wavelength division multiplexing silicon(Si) photonics receiver chip is fabricated on a silicon-on-insulator platform. The receiver chip has a 25-channel Si nanowire-arrayed waveguide grating, and each channel is integrated with a high-speed waveguide Ge-on-Si photodetector. The central wavelength, optical insertion loss, and cross talk of the array waveguide grating are 1550.6 nm, 5–8 dB, and-12 –-15 dB, respectively. The photodetectors show low dark current density of 16.9 mA∕cm^2 at-1 V and a high responsivity of 0.82 A/W at 1550 nm. High bandwidths of 23 and 29 GHz are achieved at 0 and-1 V, respectively. Each channel can operate at 50 Gbps with low input optical power even under zero bias,which realizes an aggregate data rate of 1.25 Tbps.

关键词： division chip Gbps optical bias has can dB