Towards Quantum Ballistic Field-Effect Transistors:Design and Experimental Results
作者单位：Laboratoire de Photonique et de NanostructuresCNRS/UPR20Route de Nozay91460 MarcoussisFrance
会议名称：《2006 8th International Conference on Solid-State and Integrated Circuit Technology》
会议日期：2006年
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
关 键 词：FETs Reservoirs Conductors Voltage Electron mobility Gallium arsenide Molecular beam epitaxial growth Nanostructures Microcomputers Circuits
摘 要：正During the last two decades,the size of a typical field-effect transistor（FET） in a microcomputer chip has steadily been reduced to reach now around one hundred *** operation however remains essentially classical,*** the diffusive *** a FET operating in the ballistic regime has been the dream of physicists and electrical engineers alike for several decades.A ballistic FET - a perfect FET - has no defects, kinks or obstacles other than a connection at each end to allow current flow through an external circuit. Significant performance improvement is hence expected as a consequence of the ballistic transport but also of