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A comprehensive review of recent progress on enhancement-modeβ-Ga_(2)O_(3)fets:Growth,devices and properties

Journal of Semiconductors 2023年第6期44卷 7-23页

作者： Botong Li Xiaodong Zhang Li Zhang Yongjian Ma Wenbo Tang Tiwei Chen Yu Hu Xin Zhou Chunxu Bian Chunhong Zeng Tao Ju Zhongming Zeng Baoshun Zhang School of Nano Technology and Nano Bionics University of Science and Technology of ChinaHefei 230026China Nano Fabrication Facility Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China

Power electronic devices are of great importance in modern *** decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion *** the demand for electronic components with high efficiency dramatically increasing,new materials are needed for power device *** gallium oxide,an ultra-wide bandgap semiconductor,has been considered as a promising candidate,and variousβ-Ga_(2)O_(3)power devices with high breakdown voltages have been ***,the realization of enhancement-mode(E-mode)β-Ga_(2)O_(3)field-effect transistors(fets)is still challenging,which is a critical problem for a myriad of power electronic ***,researchers have made some progress on E-modeβ-Ga_(2)O_(3)fets via various methods,and several novel structures have been *** article gives a review of the material growth,devices and properties of these E-modeβ-Ga_(2)O_(3)*** key challenges and future directions in E-modeβ-Ga_(2)O_(3)fets are also discussed.

关键词： enhancement mode fets β-Ga_(2)O_(3)

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基于GaN fets的高频半桥谐振变换器分析与设计

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电源学报 2016年第4期14卷 82-89页

作者：管乐诗卞晴刘宾王懿杰张相军徐殿国王卫哈尔滨工业大学电气工程及自动化学院哈尔滨150001

随着Si材料半导体器件性能逐步达到瓶颈,宽禁带半导体器件(GaN、SiC)在诸多方面展现出了很好的性能,如低导通阻抗,小输入、输出电容等,这些特性使得GaN和SiC器件能够应用在更高的开关频率条件,从而提高系统的功率密度。针对基于GaN FET... 详细信息

随着Si材料半导体器件性能逐步达到瓶颈,宽禁带半导体器件(GaN、SiC)在诸多方面展现出了很好的性能,如低导通阻抗,小输入、输出电容等,这些特性使得GaN和SiC器件能够应用在更高的开关频率条件,从而提高系统的功率密度。针对基于GaN fets构成的高频半桥谐振变换器进行设计,分析了高频条件下寄生电感参数对系统驱动电压及漏源极电压的影响,同时分析了高频条件下系统电压电流测量所需注意的事项及影响因素,为高频条件下GaN fets的应用提供一定的帮助。

关键词： GaN fets 高频谐振变换器寄生电感

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A Study on Relative Sensitivity of Sector Split-Drain Magnetic Field-Effect Transistor based on Standard CMOS Technology

A Study on Relative Sensitivity of Sector Split-Drain Magnet...

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2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： ZHU Dazhong LIU Tong GUO Qing Institute of Microelectronics and Optoelectronics Department of Information Science and Electronics Engineering Zhejiang University

ISBN: (纸本)1424401607

＜正＞In this paper,two different methods are used to model the relative sensitivity of sector split-drain magnetic field-effect transistor（MAGFET） based on standard CMOS *** simulation is presented to depict the complicated distribution of electric potential and current in the inversion *** mapping technique is applied to calculate the geometrical correction factor of sector Hall plate,through which the relative sensitivity of sector split-drain magnetic field-effect transistor can be expressed as an analytical model depending on geometric features of the sector *** model developed through numerical simulation and conformal mapping technique is verified by experimental *** research indicates that the theoretical relative sensitivity of the sector split-drain MAGFET is 3.82%/T（3.77%/T is measured in the experiment）,which is higher than the rectangular MAGFET that has been reported.

关键词： CMOS technology Magnetic fields fets Conformal mapping Semiconductor device modeling Numerical simulation Magnetic field measurement Voltage Transistors Analytical models

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GaAs FET/pHEMT器件小信号模型电路的确定

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仪器仪表学报 2006年第7期27卷 787-790页

作者：刘章文蒋毅古天祥电子科技大学自动化工程学院

提出了一种精确、高效的FET/pHEMT器件模型参数提取的改进方法。首先利用FET器件漏端零偏置的简化模型,测出寄生元件值,再利用正常配置时FET/pHEMT器件网络S参数,使用“剥离”技术将寄生部分全部剔除。最后利用网络导纳参数的表达式,确... 详细信息

提出了一种精确、高效的FET/pHEMT器件模型参数提取的改进方法。首先利用FET器件漏端零偏置的简化模型,测出寄生元件值,再利用正常配置时FET/pHEMT器件网络S参数,使用“剥离”技术将寄生部分全部剔除。最后利用网络导纳参数的表达式,确定了本征电路元件参数。采用了该方法的提取过程物理意义清晰,优化处理容易。对NEC器件的测试结果显示,该改进方法效率高,测试精度小于3%。

关键词： fets 小信号模型参数提取剥离

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A tradeoff between on and off current for armchair graphene nanoribbon field effect transistors explained by the complex band structure

A tradeoff between on and off current for armchair graphene ...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Tongsheng Xia Pilong Yang Liujun Zhang Hongge Li School of Electronic Information Engineering Beihang University

We showed the ballistic quantum transport calculation results for the armchair graphene nanoribbon field effect transistors,based on full complex band *** then compared the minimum leakage current in the ID-VG curve and the on current in the ID-VD *** is demonstrated that in order to have the best performance of the nanoscale graphene nanoribbon field effect transistors,trade offs are found for the off state leakage current and the on state current,i.e.,we found that a smaller/larger off state leakage current in ID-VG curve may be accompanied with a smaller/larger on current in ID-VD curve,which is then explained by full complex band structure characteristics.

关键词： Logic gates Leakage current Effective mass Photonic band gap fets Graphene Mathematical model

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Towards Quantum Ballistic Field-Effect Transistors:Design and Experimental Results

Towards Quantum Ballistic Field-Effect Transistors:Design an...

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2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： Y.Jin E.Gremion A.Cavanna U.Gennser B.Etienne C.Ulysse Laboratoire de Photonique et de Nanostructures CNRS/UPR20Route de Nozay91460 MarcoussisFrance

ISBN: (纸本)1424401607

＜正＞During the last two decades,the size of a typical field-effect transistor（FET） in a microcomputer chip has steadily been reduced to reach now around one hundred *** operation however remains essentially classical,*** the diffusive *** a FET operating in the ballistic regime has been the dream of physicists and electrical engineers alike for several decades.A ballistic FET - a perfect FET - has no defects, kinks or obstacles other than a connection at each end to allow current flow through an external circuit. Significant performance improvement is hence expected as a consequence of the ballistic transport but also of

关键词： fets Reservoirs Conductors Voltage Electron mobility Gallium arsenide Molecular beam epitaxial growth Nanostructures Microcomputers Circuits

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Multiband Power Amplifier for Multiband Wireless Applications

Multiband Power Amplifier for Multiband Wireless Application...

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2002 3rd International Conference on Microwave and Millimeter Wave Technology

作者： KW Eccleston Dept of Electrical and Computer Engineering National University of Singapore Singapore 119260

＜正＞RF sub-systems in multimode / multiband wireless communication systems need to operate on different bands that are typically narrow but sparsely separated. We show that a single-ended dual-fed distributed amplifier can operate efficiently over several sparsely separated *** approach therefore alleviates the need for separate amplifiers for each band.

关键词： Power amplifiers fets Distributed amplifiers Power generation Circuits Radiofrequency amplifiers Telephone sets Dual band Frequency response Application software

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QUANTUM-DOT CELLULAR AUTOMATA

QUANTUM-DOT CELLULAR AUTOMATA

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2004 7th International Conference on Solid-State and Integrated Circuits Technology（ICSICT 2004）

作者： Gregory L.Snider Alexei O.Orlov Ravi Kummamuru John Timler Geza Toth Gary H.Bernstein Craig S.Lent Department of Electrical Engineering University of Notre DameNotre DameIN 46556

＜正＞An introduction to of quantum-dot cellular automata （QCA） is *** is a transistorless nanoelectronic computation paradigm that addresses the issues of device and power density which are becoming increasingly important in the electronics *** of CMOS is expected to come to an end in the next 10-15 years,with perhaps the most important limiting problem being the power density and the resulting heat generated. QCA offers the possibility of circuitry that dissipates many orders of magnitude less power than CMOS,is scalable to molecular dimensions,and provides the power gain necessary to restore signal *** cells are scalable to molecular dimensions and initial measurements have demonstrated single-electron switching within a molecule.

关键词： Quantum dots Quantum cellular automata Polarization Electrons fets Stationary state Nanoscale devices Switches Power engineering computing Electronics industry

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Two Dimensional Device Simulation and Fabrication of Mesa SOI Vertical Dual Carrier Field Effect Transistor with Effective Channel Length of 30nm for Switching ASIC and SOC

Two Dimensional Device Simulation and Fabrication of Mesa SO...

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2005 6th International Conference on ASIC

作者： R.Yang G.H.Li Y.Z.Xu Y.F.Chao Z.M.Tang Y.H.Yang B.K.Ma D.H.Huang P.Xu S.G.Shen C.L.Lin C.L.Wu F.Z.Yan D.J Han Y.L.Ren L.K.Yu I.M.Cai X.N.Tian Y.Z.Ji D.S.Du C.Huang Beijing Normal University Beijing Institute of Microelectronics Technology Institute of Computing Technology CAS China Aerospace Corporation

＜正＞*** Device physics and Integrated Device and Circuit Simulation of "Dual Carrier Field Effect Transistor" （DCFET） with effective channel length of 5-30nm had been presented in Ref.[1].Two dimensional approximation methods had been used in these studies. Recently,two dimensional exact numerical simulation had been carried out for mesa type SOI switching "Vertical Dual Carrier Field Effect Transistor" （VDCFET）.This exact method is presented in this paper *** details are reported in Ref.[2]. Shown in Fig.1 is the mesa SOI switching N channel *** comparison of the simulation results of the approximate physical method and of the exact numerical method shall be discussed and are shown to be in good *** on these simulation results,mesa type SOI switching VDCFET with effective channel of 30nm was designed and fabricated by

关键词： Fabrication fets Application specific integrated circuits Physics Ion implantation Poisson equations Differential equations Numerical simulation Space charge Voltage

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Ballistic Transistors Entrance to Nanoscale Electronics

Ballistic Transistors Entrance to Nanoscale Electronics

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2004 7th International Conference on Solid-State and Integrated Circuits Technology（ICSICT 2004）

作者： Kenji Natori Institute of Applied Physics University of TsukubaTsukubaIbaraki 305-8573Japan

＜正＞Nanoscale devices in near future are going to be less than the mean free path of *** ballistic conduction is highly probable in these *** have investigated the physics of the ballistic field effect transistors（fets）.The characteristics of the ballistic silicon MOSFET is shown,and the mechanism of device operation was *** performance hmit of the MOSFET is discussed by means of the ballistic MOSFET characteristics *** of the experimental device is compared to the ballistic hmit in some fabricated *** carbon nanotube FET is introduced as the other example of the ballistic *** device was found to be of exceedingly high performance if the ballistic conduction was actually realized.

关键词： Transistors Nanoscale devices Silicon Physics MOSFET circuits fets CNTfets Ballistic transport Threshold voltage Automated highways

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