A comprehensive review of recent progress on enhancement-modeβ-Ga_(2)O_(3)FETs:Growth,devices and properties

作     者：Botong Li Xiaodong Zhang Li Zhang Yongjian Ma Wenbo Tang Tiwei Chen Yu Hu Xin Zhou Chunxu Bian Chunhong Zeng Tao Ju Zhongming Zeng Baoshun Zhang Botong Li;Xiaodong Zhang;Li Zhang;Yongjian Ma;Wenbo Tang;Tiwei Chen;Yu Hu;Xin Zhou;Chunxu Bian;Chunhong Zeng;Tao Ju;Zhongming Zeng;Baoshun Zhang

作者机构：School of Nano Technology and Nano BionicsUniversity of Science and Technology of ChinaHefei 230026China Nano Fabrication FacilitySuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2023年第44卷第6期

页      面：7-23页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported in part by the National Basic Research Program of China(Grant No.2021YFB3600202) Key Laboratory Construction Project of Nanchang(Grant No.2020-NCZDSY-008) the Suzhou Science and Technology Foundation(Grant No.SYG202027) 

主　　题：enhancement mode FETs β-Ga_(2)O_(3) 

摘      要：Power electronic devices are of great importance in modern *** decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion *** the demand for electronic components with high efficiency dramatically increasing,new materials are needed for power device *** gallium oxide,an ultra-wide bandgap semiconductor,has been considered as a promising candidate,and variousβ-Ga_(2)O_(3)power devices with high breakdown voltages have been ***,the realization of enhancement-mode(E-mode)β-Ga_(2)O_(3)field-effect transistors(FETs)is still challenging,which is a critical problem for a myriad of power electronic ***,researchers have made some progress on E-modeβ-Ga_(2)O_(3)FETs via various methods,and several novel structures have been *** article gives a review of the material growth,devices and properties of these E-modeβ-Ga_(2)O_(3)*** key challenges and future directions in E-modeβ-Ga_(2)O_(3)FETs are also discussed.