Continuous compositional spread investigation of SiC-based thin films prepared by MW-ECR plasma enhanced magnetron co-sputtering

作     者：Hanghang WANG Liyan ZHANG Wenqi LU Jun XU 王行行;张丽艳;陆文琪;徐军

作者机构：Key Laboratory of Materials Modification by LaserIon and Electron BeamsMinistry of EducationSchool of PhysicsDalian University of TechnologyDalian 116024People’s Republic of China School of Chemical EngineeringDalian University of TechnologyDalian 116024People’s Republic of China 

出 版 物：《Plasma Science and Technology》 (等离子体科学和技术（英文版）)

年 卷 期：2020年第22卷第3期

页      面：66-70页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：continuous compositional spread method silicon carbide optical band gap,magnetron sputtering Raman and IR spectra 

摘      要：A kind of combinatorial material methodology,also known as continuous compositional spread method,was employed to investigate the relationship between the optical band gap and composition of SiC thin films.A wide range of SixCy thin films with different carbon contents have been successfully deposited in a single deposition by carefully arranging the sample position on the substrate *** films were characterized by surface profiler,x-ray photoelectron spectroscopy,ultraviolet-visible spectroscopy,fourier transform infrared spectroscopy and Raman *** carbon content y increases linearly from 0.28 to 0.72 while the sample position changed from 85 to 175 mm,the optical band gap changed between 1.27 and 1.99 eV,the maximum value corresponded to the stoichiometric SiC sample at the position of 130 mm,which has the highest Si?C bond density of 11.7×10^22 cm^-*** C poor and C rich SixCy samples with y value less and larger than 0.5 were obtained while samples deviated from the position 130 mm,the optical band gap decreased with the Si?C bond density.