Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

作     者：C.Trager-Cowan A.Alasmari W.Avis J.Bruckbauer P.R.Edwards B.Hourahine S.Kraeusel G.Kusch R.Johnston G.Naresh-Kumar R.W.Martin M.Nouf-Allehiani E.Pascal L.Spasevski D.Thomson S.Vespucci P.J.Parbrook M.D.Smith J.Enslin F.Mehnke M.Kneissl C.Kuhn T.Wernicke S.Hagedorn A.Knauer V.Kueller S.Walde M.Weyers P.-M.Coulon P.A.Shields Y.Zhang L.Jiu Y.Gong R.M.Smith T.Wang A.Winkelmann 

作者机构：Department of physicssupauniversity of strathclydeglasgow G4 onguk Tyndall national instituteuniversity college corkcork t12 r5cpireland Institute of solid state physicslechnische universitat berlin10623 berlingermany Ferdinand-braun-lnstitutleibniz-lnstitut fur hochstfrequenztechnik12489 berlingermany Department of electronic and electrical engineeringcentre of nanoscience&nanotechnologyuniversity of bathbath ba27ayuk Department of electronic and electrical engineeringuniversity of sheffieldsheffield s13jduk Laser components departmentlaser zentrum hannover 5.v.30419 hannovergermany 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2019年第7卷第11期

页      面：I0017-I0026页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：financial support of the Engineering and Physical Sciences Research Council, UK via Grant No. EP/J015792/1,“Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC” Grant No. EP/M015181/ 1, “Manufacturing nano-engineered III-nitrides” Grant No. EP/P015719/1, “Quantitative non-destructive nanoscale characterisation of advanced materials” partially supported by the German “Federal Ministry of Education and Research” (BMBF) within the “Advanced UV for Life” consortium the “German Research Foundation” (DFG) within the “Collaborative Research Center 787” 

主　　题：electron nitride doping 

摘      要：In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.