Polarity control of carrier injection for nanowire feedback field-effect transistors

作     者：Doohyeok Lim Sangsig Kim 

作者机构：Department of Electrical EngineeringKorea University145 Anam-roSeongbuk-guSeoul 02841Republic of Korea 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2019年第12卷第10期

页      面：2509-2514页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the MOTIE (Ministry of Trade, Industry & Energy) KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device part by the Mid-career Researcher Program the Brain Korea 21 Plus Project in 2019 through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning and the Korea University Grant 

主　　题：silicon nanowire reconfigurable transistor positive-feedback loop separate gate 

摘      要：We present polarity control of the carrier injection for a feedback field-effect transistor(FBFET)with a selectively thinned p^+-i-n^+Si nanowire(SiNW)channel and two separate *** SiNW FBFET can be reconfigured in the p-or n-channel operation modes via simple control of electric *** two separate gates induce potential barriers in the SiNW channel for selective control of the carrier *** contrast to previously reported rec on figurable tran sistors,our tran sistor features symmetry of the electrical characteristics for the p-and n-cha nnel operation ***-feedback operation of the SiNW FBFET provides superior switching characteristics for the p-and n-type 8nfigurations,including the on/off ratios(~10^5)and subthreshold swings(1.36-1.78 mV/dec).This novel tran sistor is a promising can didate for reconfigurable electro nics.