Polarity control of carrier injection for nanowire feedback field-effect transistors
作者机构:Department of Electrical EngineeringKorea University145 Anam-roSeongbuk-guSeoul 02841Republic of Korea
出 版 物:《Nano Research》 (纳米研究(英文版))
年 卷 期:2019年第12卷第10期
页 面:2509-2514页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0702[理学-物理学]
基 金:supported by the MOTIE (Ministry of Trade, Industry & Energy) KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device part by the Mid-career Researcher Program the Brain Korea 21 Plus Project in 2019 through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning and the Korea University Grant
主 题:silicon nanowire reconfigurable transistor positive-feedback loop separate gate
摘 要:We present polarity control of the carrier injection for a feedback field-effect transistor(FBFET)with a selectively thinned p^+-i-n^+Si nanowire(SiNW)channel and two separate *** SiNW FBFET can be reconfigured in the p-or n-channel operation modes via simple control of electric *** two separate gates induce potential barriers in the SiNW channel for selective control of the carrier *** contrast to previously reported rec on figurable tran sistors,our tran sistor features symmetry of the electrical characteristics for the p-and n-cha nnel operation ***-feedback operation of the SiNW FBFET provides superior switching characteristics for the p-and n-type 8nfigurations,including the on/off ratios(~10^5)and subthreshold swings(1.36-1.78 mV/dec).This novel tran sistor is a promising can didate for reconfigurable electro nics.