Effect of Copper Doping on Structural, Dielectric and DC Electrical Resistivity Properties of BaTiO<sub>3</sub>
Effect of Copper Doping on Structural, Dielectric and DC Electrical Resistivity Properties of BaTiO<sub>3</sub>作者机构：Department of Physics GIT GITAM University Visakhapatnam India Department of Physics S.R.K.R. Engineering College Bhimavaram India
出 版 物：《Advances in Materials Physics and Chemistry》 (材料物理与化学进展（英文）)
年 卷 期：2013年第3卷第1期
页 面：77-82页
主 题：Barium Titanate Copper Doping Dielectric Properties DC Electrical Resistivity Frequency Dependence
摘 要：The modified BaTiO3 ferroelectric materials are suitable for pyroelectric applications. This paper reports the structural, dielectric and electrical properties on copper influence in BaTiO3 when it was substituted site “A of perovskite structure of BaTiO3. Copper has been chosen for modified BaTiO3 with different concentrations with stoichiometry Ba1-xCuxTiO3, where x = 0.01%, 0.02%, 0.03% and 0.04%. The X-ray diffraction patterns of the samples doped with different composition of CuO are found to be that the positions and intensities of the diffraction peaks are similar and no secondary phases were observed. The Curie’s temperature (Tc) for all CuO doped BaTiO3 with were found to be in the range of 120°C to 125°C. The frequency dependence of relative permittivity (εr) and dielectric loss (Tanδ) of Ba1-xCuxTiO3 samples at room temperature were reported in the range 100 KHz - 1 MHz. The temperature dependence of D.C electrical resistivity studies were reported for all samples indicating that the participation of Cu2+-Cu+ ions in the conduction process around their Curie’s temperature.
维普期刊数据库