Temperature Effects on the Electrical Performance of Large Area Multicrystalline Silicon Solar Cells Using the Current Shunt Measuring Technique
Temperature Effects on the Electrical Performance of Large Area Multicrystalline Silicon Solar Cells Using the Current Shunt Measuring Technique作者机构：National Institute for Standards Brunel University
出 版 物：《Engineering（科研）》 (工程（英文）（1947-3931）)
年 卷 期：2010年第2卷第11期
页 面：888-894页
学科分类：1002[医学-临床医学] 100214[医学-肿瘤学] 10[医学]
主 题：Large Area Multicrystalline Silicon Solar Cell Current Shunt Measuring Technique Temperature Effects Short Circuit Current Open Circuit Voltage Accumulated Power Incident Radiation
摘 要：The temperature effects on the electrical performance of a large area multicrystalline silicon solar cell with back-contact technology have been studied in a desert area under ambient conditions using the current shunt measuring technique. Therefore, most of the problems encountered with traditional measuring techniques are avoided. The temperature dependency of the current shunt from 5oC up to 50oC has been investigated. Its temperature coefficient proves to be negligible which means that the temperature dependency of the solar cell is completely independent of the current shunt. The solar module installed in a tilted position at the optimum angle of the location, has been tested in two different seasons (winter and summer). The obtained solar cell short circuit current, open circuit voltage and output power are correlated with the measured incident radiation in both seasons and all results are discussed.
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