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Electrical Performance Study of a Large Area Multicrystalline Silicon Solar Cell Using a Current Shunt and a Micropotentiometer

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Engineering（科研） 2010年第4期2卷 263-269页

作者： Hala Mohamed Abdel Mageed Ahmed Faheem Zobaa Ahmed Ghitas Mohamed Helmy Abdel Raouf Mohamed Sabry Abla Hosni Abd El-Rahman Mohamed Mamdouh Abdel Aziz National Institute for Standards University of Exeter National Research Institute of Astronomy and Geophysics

In this paper, a new technique using a Current Shunt and a Micropotentiometer has been used to study the electrical performance of a large area Multicrystalline silicon solar cell at outdoor conditions. The electrical performance is mainly described by measuring both cell short circuit current and open circuit voltage. The measurements of this cell by using multimeters suffer from some problems because the cell has high current intensity with low output voltage. So, the solar cell short circuit current values are obtained by measuring the voltage developed across a known resistance Current Shunt. Samples of the obtained current values are accurately calibrated by using a Micropotentiometer (μpot) thermal element (TE) to validate this new measuring technique. Moreover, the solar cell open circuit voltage has been measured. Besides, the cell output power has been calculated and can be correlated with the measured incident radiation.

关键词： Large Area Multicrystalline Silicon Solar Cell Current Measurements Calibration Current Shunt Micropotentiometer Short Circuit Current Open Circuit Voltage

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Effect of Directional Solidification Processes on Diffusion Length Distribution of High Quality Multicrystalline Silicon Ingots

Effect of Directional Solidification Processes on Diffusion ...

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第十五届国际光伏科学与工程大会

作者： T.Eguchi T.Hirasawa I.Yamaga M.Dhamrin T.Saitoh K.Kamisako Dai-ichi Dentsu Co. 1-54-1 Shimoishihara Chofu Tokyo 182-0034 Japan Dai-ichi Dentsu Co. 1-54-1 Shimoishihara Chofu Tokyo 182-0034 Japan Dai-ichi Dentsu Co. 1-54-1 Shimoishihara Chofu Tokyo 182-0034 Japan Tokyo Univ.of Agr.＆ Tech. 2-24-16 Naka-cho Koganei Tokyo 184-8588 Japan Tokyo Univ.of Agr.＆ Tech. 2-24-16 Naka-cho Koganei Tokyo 184-8588 Japan Tokyo Univ.of Agr.＆ Tech. 2-24-16 Naka-cho Koganei Tokyo 184-8588 Japan

＜正＞ Effect of directional solidification conditions on diffusion length distribution of Multicrystalline silicon ingots is investigated. Crucible-lowering and temperature-lowering impact on crystal quality during solidification is examined as two different possible growth methods. An average diffusion length of around 400μm is realized in both ingot growth methods with better diffusion length distribution for the crucible lowering method.

关键词： Multicrystalline Silicon Solidification SPV Resistivity

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Temperature Effects on the Electrical Performance of Large Area Multicrystalline Silicon Solar Cells Using the Current Shunt Measuring Technique

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Engineering（科研） 2010年第11期2卷 888-894页

作者： Hala Mohamed Abdel Mageed Ahmed Faheem Zobaa Mohamed Helmy Abdel Raouf Abla Hosni Abd El-Rahman Mohamed Mamdouh Abdel Aziz National Institute for Standards Brunel University

The temperature effects on the electrical performance of a large area Multicrystalline silicon solar cell with back-contact technology have been studied in a desert area under ambient conditions using the current shunt measuring technique. Therefore, most of the problems encountered with traditional measuring techniques are avoided. The temperature dependency of the current shunt from 5oC up to 50oC has been investigated. Its temperature coefficient proves to be negligible which means that the temperature dependency of the solar cell is completely independent of the current shunt. The solar module installed in a tilted position at the optimum angle of the location, has been tested in two different seasons (winter and summer). The obtained solar cell short circuit current, open circuit voltage and output power are correlated with the measured incident radiation in both seasons and all results are discussed.

关键词： Large Area Multicrystalline Silicon Solar Cell Current Shunt Measuring Technique Temperature Effects Short Circuit Current Open Circuit Voltage Accumulated Power Incident Radiation

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