THE DEEP LEVELS IN GaSb/AlSb(00l)SUPERLATTICES

作     者：HUANG Mingzhu GU Yiming REN Shangyuan 黄明竹;顾一鸣;任尚元

作者机构：Department of PhysicsUniversity of Science and Technology of ChinaHefei 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1987年第4卷第6期

页      面：253-256页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the Science Fund of the Chinese Academy of Science 

主　　题：GaSb AlSb donor 

摘      要：The electronic states,especially the deep levels of the defects in GaSb/AlSb(001)superlattices have been *** band gap becomes larger and the donor binding energy becomes deeper with the decrease of the quantum well *** impurity deep levels exhibit a position dependent relation.