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Structural Characterization of Carbon-implanted gasb

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Journal of Wuhan University of Technology(Materials Science) 2023年第5期38卷 969-973页

作者： SHEN Guiying ZHAO Youwen HE Jianjun Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors Chinese Academy of SciencesP.O.Box 912Beijing 100083China College of materials science and opto-electronic technology University of Chinese Academy of SciencesBeijing100049China Rugao Institute of Compound Semiconductor Industry Jiangsu226500China

Ion implantation induced damage in gasb and its removal by rapid thermal annealing(RTA)have been investigated by Raman spectroscopy.The evolution of the Raman modes as a function of implantation fluence,annealing temperature and time has been analyzed.Results indicate that a lattice quality that is close to as-grown gasb has been obtained by annealing the implanted samples at 500℃for 45 s.However,consequent surface analyses by scanning electron microscope(SEM)and atomic force microscope(AFM)show that a heavily perturbed layer contains voids due to the outdifiusion of Sb atoms on the surface remains.Mechanism of the damage recovery and the structure of the implanted layer are discussed based on the experimental results.

关键词： Ion implantation Raman spectroscopy gasb RTA

应变对(Ga,Mo)Sb磁学和光学性质影响的理论研究

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物理学报 2022年第9期71卷 245-256页

作者：潘凤春林雪玲王旭明宁夏大学物理与电子电气工程学院银川750021

近年来,作为一种自旋电子学领域的关键材料,具有高温本征铁磁性的稀磁半导体受到了广泛的关注.为探索能够提高本征铁磁性居里温度(C urie temperature,T;)的方法,本文运用第一性原理LDA+U方法研究了应变对Mo掺杂gasb的电子结构、磁学及... 详细信息

近年来,作为一种自旋电子学领域的关键材料,具有高温本征铁磁性的稀磁半导体受到了广泛的关注.为探索能够提高本征铁磁性居里温度(C urie temperature,T;)的方法,本文运用第一性原理LDA+U方法研究了应变对Mo掺杂gasb的电子结构、磁学及光学性质的影响.研究结果表明:-6%—2.5%应变范围下gasb半导体材料具有稳定的力学性能,压应变下gasb材料的可塑性、韧性增强,有利于gasb半导体材料力学性能的提升;应变对Mo替代Ga缺陷(Mo;)的电子结构有重要的影响,-3%至-1.2%应变范围下Mo;处于低自旋态(low spin state,LSS),具有1;的局域磁矩,-1.1%—2%应变范围下Mo;处于高自旋态(high spin state,HSS),具有3;的磁矩;不管是LSS还是HSS,Mo;产生局域磁矩之间的耦合都是铁磁耦合,但铁磁耦合的强度和物理机制不同,适当的压应变可有效提高铁磁耦合强度,这有利于实现高T;的gasb基磁性半导体;Mo可极大提高gasb半导体材料的电极化能力,这有利于光生电子-空穴对的形成和分离,提高掺杂体系对长波光子的光电转化效率;Mo引入的杂质能级使电子的带间跃迁对所需要吸收光子的能量变小,掺杂体系光学吸收谱的吸收边发生了红移,拉应变可进一步提升(Ga,Mo)Sb体系在红外光区的光学性能.

关键词： gasb 应变磁学性质光学性质第一性原理

Ga_(1-x)Ti_(x)Sb(x=0.25,0.50,0.75)电学、磁学及光学性质的第一性原理研究

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稀有金属材料与工程 2023年第10期52卷 3571-3580页

作者：姚云美肖清泉付莎莎邹梦真唐华张瑞亮谢泉贵州大学大数据与信息工程学院新型光电子材料与技术研究所贵州贵阳550025

直接带隙半导体锑化镓(gasb)凭借其优异的性能在光纤通信、光电器件等领域具有应用价值。为了拓展gasb在光电器件中应用及探索新的自旋电子学材料,采用第一性原理计算了不同Ti掺杂浓度的gasb(Ga_(1-x)Ti_(x)Sb,其中x为Ti原子的掺杂原子... 详细信息

直接带隙半导体锑化镓(gasb)凭借其优异的性能在光纤通信、光电器件等领域具有应用价值。为了拓展gasb在光电器件中应用及探索新的自旋电子学材料,采用第一性原理计算了不同Ti掺杂浓度的gasb(Ga_(1-x)Ti_(x)Sb,其中x为Ti原子的掺杂原子分数)的电学、磁学及光学性质。计算结果表明:Ga_(1-x)Ti_(x)Sb的能带结构和态密度在费米能级附近产生自旋劈裂并形成净磁矩,使Ga_(1-x)Ti_(x)Sb(x=0.25,0.50,0.75)分别表现为半金属铁磁体、稀磁半导体、磁性金属。Ga_(1-x)Ti_(x)Sb优化后晶格常数变大。Ga_(1-x)Ti_(x)Sb的折射率、反射率、吸收系数发生红移且在中远红外波段光吸收系数高于gasb;Ga_(1-x)Ti_(x)Sb随着Ti掺杂浓度的增加对中远红外波段光子的吸收效果变得更好。计算结果为拓展gasb基半导体材料在红外探测器、红外半导体激光器等领域的应用以及新的自旋电子学材料的发现提供理论参考。

关键词：第一性原理 gasb Ti掺杂电子结构磁学性质光学性质

gasb p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ni/Pt/Au Source/Drain Ohmic Contacts

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Chinese Physics Letters 2012年第12期29卷 188-191页

作者：吴立枢孙兵常虎东赵威薛百清张雄刘洪刚 Advanced Photonics Center School of Electronic Science and EngineeringSoutheast UniversityNanjing 210096 Microwave Device and IC Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029

gasb is an attractive candidate for future high-performance Ⅲ-Ⅴ p-channel metal-oxide-semiconductor-field-effect-transistors(pMOSFETs)because of its high hole mobility.The effect of HCl based-chemical cleaning on removing the non-self limiting and instable native oxide layer of gasb to obtain a clean and smooth surface has been studied.It is observed that the rms roughness of a gasb surface is significantly reduced from 2.731 nm to 0.693 nm by using HCl:H_(2)O(1:3)solution.The Ni/Pt/Au ohmic contact exhibits an optimal specific contact resistivity of about 6.89×10^(-7)Ω·cm^(2) with a 60 s rapid thermal anneal(RTA)at 250℃.Based on the chemical cleaning and ohmic contact experimental results,inversion-channel enhancement gasb pMOSFETs are demonstrated.For a 6μm gate length gasb pMOSFET,a maximum drain current of about 4.0 mA/mm,a drain current on-off(ION/IOFF)ratio of>10^(3),and a subthreshold swing of~250 mV/decade are achieved.Combined with the split C-V method,a peak hole mobility of about 160 cm^(2)/V·s is obtained for a 24μm gate length gasb pMOSFET.

关键词： gasb drain removing

gasb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

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Chinese Physics B 2015年第1期24卷 524-527页

作者：赵连锋谭桢王敬许军 Tsinghua National Laboratory for Information Science and Technology Institute of Microelectronics Tsinghua University

gasb p-channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two temperature regions, and the un- derlying mechanisms are discussed. It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current, which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions. Methods to further reduce the off-state drain leakage current are given.

关键词： gasb metal-oxide-semiconductor field-effect transistor temperature dependent characteristics drain leakage current

Improved interfacial and electrical properties of gasb metal oxide semiconductor devices passivated with acidic(NH_4)_2S solution

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Chinese Physics B 2014年第7期23卷 744-747页

作者：赵连锋谭桢王敬许军 Tsinghua National Laboratory for Information Science and Technology Institute of MicroelectronicsTsinghua University

Surface passivation with acidic （NH4）2S solution is shown to be effective in improving the interfacial and electrical properties of HfOE/gasb metal oxide semiconductor devices. Compared with control samples, the samples treated with acidic （NH4）2S solution show great improvements in gate leakage current, frequency dispersion, border trap density, and interface trap density. These improvements are attributed to the enhancing passivation of the substrates, according to analysis from the perspective of chemical mechanism, X-ray photoelectron spectroscopy, and high-resolution cross-sectional transmission electron microscopy.

关键词： gasb metal oxide semiconductor sulfur passivation

A review on MBE-grown HgCdSe infrared materials on gasb(211)B substrates

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Chinese Physics B 2019年第1期28卷 116-125页

作者： Z K Zhang W W Pan J L Liu W Lei Department of Electrical Electronic and Computer EngineeringThe University of Western Australia35 Stirling HighwayCrawley 6009Australia

We review our recent efforts on developing HgCdSe infrared materials on Ga Sb substrates via molecular beam epitaxy(MBE) for fabricating next generation infrared detectors with features of lower production cost and larger focal plane array format size. In order to achieve high-quality HgCdSe epilayers, ZnTe buffer layers are grown before growing HgCdSe, and the study of misfit strain in ZnTe buffer layers shows that the thickness of ZnTe buffer layer needs to be below 300 nm in order to minimize the generation of misfit dislocations. The cut-off wavelength/alloy composition of HgCdSe materials can be varied in a wide range by varying the ratio of Se/Cd beam equivalent pressure during the HgCdSe growth.Growth temperature presents significant impact on the material quality of HgCdSe, and lower growth temperature leads to higher material quality for HgCdSe. Typically, long-wave infrared HgCdSe(x = 0.18, cut-off wavelength of 10.4 μm at 80 K) presents an electron mobility as high as 1.3×10~5cm^2·V^(-1)·s^(-1), a background electron concentration as low as 1.6×10^(16)cm^(-3), and a minority carrier lifetime as long as 2.2 μs. These values of electron mobility and minority carrier lifetime represent a significant improvement on previous studies of MBE-grown HgCdSe reported in the open literatures,and are comparable to those of counterpart HgCdTe materials grown on lattice-matched CdZnTe substrates. These results indicate that HgCdSe grown at the University of Western Australia, especially long-wave infrared can meet the basic material quality requirements for making high performance infrared detectors although further effort is required to control the background electron concentration to below 10^(15)cm^(-3). More importantly, even higher quality HgCdSe materials on gasb are expected by further optimizing the growth conditions, using higher purity Se source material, and implementing postgrowth thermal annealing and defect/impurity gettering/filtering. Our results demonstrate the great potential of HgCdSe infrared mate

关键词： infrared detector HgCdSe gasb molecular beam epitaxy

Low Crosstalk Three-Color Infrared Detector by Controlling the Minority Carriers Type of InAs/gasb Superlattices for Middle-Long and Very-Long Wavelength

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Chinese Physics Letters 2016年第4期33卷 151-154页

作者：蒋洞微向伟国凤云郝宏玥韩玺李晓超王国伟徐应强于清江牛智川 Opto-electric Information Science School of Materials Science and EngineeringHarbin Institute of Technology State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China

We report a type-Ⅱ InAs/gasb superlattice three-color infrared detector for mid-wave （MW）, long-wave （LW）, and very long-wave （VLW） detections. The detector structure consists of three contacts of NIPIN architecture for MW and LW detections, and hetero-junction NIP architecture for VLW detection. It is found that the spectral crosstalks can be significantly reduced by controlling the minority carriers transport via doping beryllium in the two active regions of NIPIN section. The crosstalk detection at MW, LW, and VLW signals are achieved by selecting the bias voltages on the device. At 77K, the cutoff wavelengths of the three-color detection are 5.3μm （at OmV）, 141μm （at 300mV） and 19μm （at -20mV） with the detectivities of 4.6xlO11 cm.Hzl/ZW-1, 2.3×10^10 cm.Hzl/2W-1, and 1.0×10^10cm.Hzl/2W-1 for MW, LW and VLW. The crosstalks of the MW channel, LW channel, and VLW channel are almost 0, 0.25, and 0.6, respectively.

关键词： gasb on of Low Crosstalk Three-Color Infrared Detector by Controlling the Minority Carriers Type of InAs/gasb Superlattices for Middle-Long and Very-Long Wavelength by InAs for Long

Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/gasb superlattices

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Journal of Semiconductors 2013年第11期34卷 74-78页

作者：王国伟向伟徐应强张亮彭振宇吕衍秋司俊杰王娟邢军亮任正伟牛智川 State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Luoyang Optical Electronics Development Center

We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/gasb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML gasb SL active layer, which is grown by solid source molecular beam epitaxy on gasb （100） N type substrates. Lattice mismatch between the superlattices and gasb substrate achieves 148.9 ppm. The full width at half maximum of the first or- der satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 x 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I-V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an RoA of 103 f2. cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 10^9 cm.Hz^1/2/W.

关键词： superlattices gasb focal plane array infrared detector