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A tunable passive mixer for SAW-less front-end with reconfigurable voltage conversion gain and intermediate frequency bandwidth

A tunable passive mixer for SAW-less front-end with reconfigurable voltage conversion gain and intermediate frequency bandwidth

作     者:陶健 fan xiangning zhao yuan 

作者机构:Institute of RF&OE-ICs School of Information Science and Engineering Southeast University Nanjing 210096 P. R. China 

出 版 物:《High Technology Letters》 (高技术通讯(英文版))

年 卷 期:2018年第24卷第1期

页      面:10-18页

核心收录:

学科分类:0809[工学-电子科学与技术(可授工学、理学学位)] 080902[工学-电路与系统] 08[工学] 0710[理学-生物学] 0831[工学-生物医学工程(可授工学、理学、医学学位)] 0810[工学-信息与通信工程] 1205[管理学-图书情报与档案管理] 0807[工学-动力工程及工程热物理] 0805[工学-材料科学与工程(可授工学、理学学位)] 0802[工学-机械工程] 0836[工学-生物工程] 0811[工学-控制科学与工程] 0812[工学-计算机科学与技术(可授工学、理学学位)] 0702[理学-物理学] 

基  金:Supported by the National Basic Research Program of China(No.2010CB327404) the Priority Academic Program Development of Jiangsu Higher Education Institutions 

主  题:reconfigurable radio frequency (RF) front-end multi-mode multi-standard( MMMS) high-Q band-pass filter ( BPF) cross-coupled common gate low noise amplifier ( CC-CGLNA) CMOS 

摘      要:An adjustable mixer for surface acoustic wave( SAW)-less radio frequency( RF) front-end is presented in this paper. Through changing the bias voltage,the presented mixer with reconfigurable voltage conversion gain( VCG) is suitable for multi-mode multi-standard( MMMS) applications. An equivalent local oscillator( LO) frequency-tunable high-Q band-pass filter( BPF) at low noise amplifier( LNA) output is used to reject the out-of-band interference signals. Base-band( BB) capacitor of the mixer is variable to obtain 15 kinds of intermediate frequency( IF) bandwidth( BW). The proposed passive mixer with LNA is implemented in TSMC 0. 18μm RF CMOS process and operates from 0. 5 to 2. 5 GHz with measured maximum out-of-band rejection larger than 40 d B. The measured VCG of the front-end can be changed from 5 to 17 d B; the maximum input intercept point( IIP3) is0 d Bm and the minimum noise figure( NF) is 3. 7 d B. The chip occupies an area of 0. 44 mm^2 including pads.

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