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High-Repetition-Rate and High-Beam-Quality Laser Pulses with 1.5 MW Peak Power Generation from a Two-Stage Nd:YVO4 amplifier

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Chinese Physics Letters 2019年第11期36卷 22-26页

作者： Qiu-Run He Jing Guo Bao-Fu Zhang Zhong-Xing Jiao School of Physics Sun Yat-sen UniversityGuangzhou 510275 Sino-French Institute of Nuclear Engineering and Technology Sun Yat-sen UniversityZhuhai 519082 National Demonstration Center for Experimental Physics Education Sun Yat-sen UniversityGuangzhou 510275

We develop a two-stage end-pumped Nd:YVO4 amplifier seeded by a passively Q-switched microchip laser. An average output power of 13.5 W with repetition rate up to 7 kHz and pulse duration of ~1.24 ns is obtained,corresponding to a pump extraction efficiency of 16.1%(19.5% for the second stage) and peak power of ~1.5 *** beam quality factors at maximum output power are measured to be Mx2= 1.56 and My2= 1.48. We introduce an analytical model to estimate gain and beam quality after amplification. This model focuses on the influence of ratio of seed spot radius to pump spot radius when designing an amplifier. Moreover, our experiments reveal that the re-imaging system in the double-pass configuration can be used to enhance the beam quality.

关键词： Nd:YVO4 amplifier pump

A low power and low distortion rail-to-rail input/output amplifier using constant current technique

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Journal of Semiconductors 2011年第4期32卷 107-110页

作者：刘彦赵毅强张世林赵宏亮 School of Electronic Information Engineermg Tianjin University School of Physics Liaoning University

A rail-to-rail amplifier with constant transconductance,intended for audio processing,is *** constant transconductance is obtained by a constant current technique based on the input differential pairs operating in the weak inversion *** working in the weak inversion region have the advantages of low power and low *** proposed rail-to-rail amplifier,fabricated in a standard 0.35μm CMOS process,occupies a core die area of 75×183μ*** results show that the maximum power consumption is 85.37μW with a supply voltage of 3.3 V and the total harmonic distortion level is 1.2%at 2 kHz.

关键词： amplifier constant transconductance low distortion low power rail-to-rail

A C-Band Internally-Matched High Efficiency GaN Power amplifier

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Chinese Physics Letters 2014年第10期31卷 138-141页

作者：马晓华魏家行曹梦逸卢阳赵博超董梁王毅郝跃 School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071

We present a design and realization of a high efficiency C-Band （5.2 GHz-5.8 GHz） internally-matched gallium nitride （GaN） power amplifier （PA）. To reduce power dissipation and to achieve high efficiency, both input and output matching networks, along with 2nd-harmonic modulation circuits, are designed accurately according to the source and load optimum impedances extracted by source-pull and load-pull measurements. The PA realizes an excellent rf performance under a pulsed condition, demonstrating a maximum output power of 52.2dBm （164 W） with at least 13.5dB gain in the frequency range from 5.2GHz to 5.8GHz （10% relative bandwidth）. At the same time, a power-added efficiency （PAE） of 69.4% is observed at 5.6GHz and over 65.0% throughout the whole bandwidth. The PAE is the state-of-art performance for C-band GaN high-electron-mobility transistor PA with such high output power, to the best of our knowledge.

关键词： C-Band amplifier present

A 40-Gbit/s 1-to-2 Photonic Data Distributor Employing a Single Semiconductor Optical amplifier

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Chinese Physics Letters 2011年第6期28卷 157-159页

作者： ZHANG Yin DONG Jian-Ji LEI Lei HE Hao HUANG De-Xiu ZHANG Xin-Liang Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering Huazhong University of Science and TechnologyWuhan 430074

A simple design of 1-to-2 photonic data distributor is proposed.A proof-of-concept experiment is performed at 40 Gbit/s employing four-wave mixing and cross gain modulation in a single semiconductor optical *** output logic signals with high extinction ratios(over 11 dB)and clear open eyes are obtained,without using any additional input light *** scheme would be a promising candidate for future ultrafast all-optical signal processing applications.

关键词： Gbit/s amplifier optical

Polarization dependence of gain and amplified spontaneous Brillouin scattering noise analysis for fiber Brillouin amplifier

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Chinese Physics B 2019年第9期28卷 253-257页

作者： Kuan-Lin Mu Jian-Ming Shang Li-Hua Tang Zheng-Kang Wang Song Yu Yao-Jun Qiao School of Information and Communication Engineering Beijing University of Posts and TelecommunicationsBeijing 100876China Institute of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China

The polarization dependences of gain and amplified spontaneous Brillouin scattering(ABS) noise for fiber Brillouin amplifier(FBA) are analyzed through theories, simulations, and *** vector propagation equations for calculating the gain of the probe signal and the ABS noise are derived and analyzed in the Stokes *** simulations and experiments, we prove that the gain of the probe signal and the ABS noise are strongly dependent on the relative state of polarization(SOP) of the pump and probe *** closer the relative SOP of the pump and probe signals is, the more obvious ABS noise suppression effect will be brought by increasing the power of the input probe signal.

关键词： fiber Brillouin amplifier state of polarization stimulated Brillouin scattering spontaneous Brillouin scattering

Edge-emitting polariton laser and amplifier based on a ZnO waveguide

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Light(Science & Applications) 2018年第1期7卷 247-254页

作者： O.Jamadi F.Reveret P.Disseix F.Medard J.Leymarie A.Moreau D.Solnyshkov C.Deparis M.Leroux E.Cambril S.Bouchoule J.Zuniga-Perez G.Malpuech Institut Pascal PHOTON-N2UniversitéClermont AuvergneCNRSSIGMA ClermontF-63000 Clermont-FerrandFrance UCA CRHEA-CNRSValbonne F-06560France Centre Nanosciences et Nanotechnologies(C2N) CNRSUniversity Paris-SaclayMarcoussis F-91460France

We demonstrate edge-emitting exciton-polariton(polariton)laser operation from 5 to 300 K and polariton amplifiers based on polariton modes within ZnO *** guided mode dispersion below and above the lasing threshold is directly measured using gratings placed on top of the sample,fully demonstrating the polaritonic nature of the lasing *** threshold is found to be smaller than that expected for radiative polaritons in planar ZnO microcavities below 150 K and comparable *** results open up broad perspectives for guided polaritonics by enabling easier and more straightforward implementation of polariton integrated circuits that exploit fast propagating polaritons,and,possibly,topological protection.

关键词： amplifier waveguide laser

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

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Chinese Physics B 2015年第10期24卷 438-442页

作者：郑佳欣马晓华卢阳赵博超张宏鹤张濛曹梦逸郝跃 School of Advanced Material and Nanotechnology Xidian University School of Microelectronics Xidian University

A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.

关键词： AIGaN/GaN HEMT high power-added efficiency amplifier microwave and millimeterwave de- vices and circuits load pull

Tomographic Imaging and Three-Dimensional Reconstruction Based on a High-Gain Optical Parametric amplifier

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Chinese Physics Letters 2012年第5期29卷 144-146页

作者： YANG Jing DU Shi-Feng ZHANG Jing-Yuan CAO Dong CUI Da-Fu PENG Qin-Jun XU Zu-Yan RCLPT Key Lab of Functional Crystal and Laser TechnologyTechnical Institute of Physics and ChemistryChinese Academy of SciencesBeijing 100190 Department of Physics Georgia Southern UniversityStatesboroGA 30460USA Graduate University of the Chinese Academy of Sciences Beijing 100190

Tomographic imaging and three-dimensional reconstruction based on a high-gain picosecond optical parametric amplifier (OPA) is demonstrated. More than 40dB intensity amplification of the image is achieved from the high-gain *** images of various longitudinal positions of the target are extracted by the gated nature of the OPA,then a three-dimensional (3-D) surface topography of the target is *** gated and high-gain property of the OPA allows tomographic optical imaging together with 3-D profile reconstruction of the target in turbid media.

关键词： amplifier optical topography

A Ka-band 22 dBm GaN amplifier MMIC

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Journal of Semiconductors 2011年第8期32卷 128-131页

作者：王东方陈晓娟袁婷婷魏珂刘新宇 Institute of Microelectronics Chinese Academy of Sciences

A Ka-band GaN amplifier MMIC has been designed in CPW technology,and fabricated with a domestic GaN epitaxial wafer and *** is,to the best of our knowledge,the first demonstration of domestic Kaband GaN amplifier *** single stage CPW MMIC utilizes an AlGaN/GaN HEMT with a gate-length of 0.25μm and a gate-width of 2×75μ*** V_（ds）=10 V,continuous-wave operating conditions,the amplifier has a 1.5 GHz operating *** exhibits a linear gain of 6.3 dB,a maximum output power of 22 dBm and a peak PAE of 9.5%at 26.5 *** output power density of the AlGaN/GaN HEMT in the MMIC reaches 1 W/mm at Ka-band under the condition of V_（ds）=10 V.

关键词： GaN MMIC AlGaN/GaN HEMT amplifier Ka band CPW