Depositing aluminum as sacrificial metal to reduce metal–graphene contact resistance

作     者：毛达诚 金智 王少青 张大勇 史敬元 彭松昂 王选芸 Da-cheng Mao;Zhi Jin;Shao-qing Wang;Da-yong Zhang;Jing-yuan Shi;Song-ang Peng;Xuan-yun Wang

作者机构：Department of Microwave Devices and Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2016年第25卷第7期

页      面：483-487页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project by the National Science and Technology Major Project,China(Grant No.2011ZX02707.3) the National Natural Science Foundation of China(Grant No.61136005) the Chinese Academy of Sciences(Grant No.KGZD-EW-303) the Project of Beijing Municipal Science and Technology Commission,China(Grant No.Z151100003515003) 

主　　题：graphene field effect transistor contact resistance 

摘      要：Reducing the contact resistance without degrading the mobility property is crucial to achieve high-performance graphene field effect transistors. Also, the idea of modifying the graphene surface by etching away the deposited metal provides a new angle to achieve this goal. We exploit this idea by providing a new process method which reduces the contact resistance from 597Ω ·μm to sub 200 Ω ·μm while no degradation of mobility is observed in the devices. This simple process method avoids the drawbacks of uncontrollability, ineffectiveness, and trade-off with mobility which often exist in the previously proposed methods.