Flexible kesterite thin-film solar cells under stress
作者机构：Department of PhysicsEwha Womans UniversitySeoul 03760Republic of Korea Division of Energy TechnologyDaegu Gyeongbuk Institute of Science and Technology(DGIST)Daegu 42988Republic of Korea Department of Solar&Energy EngineeringCheongju UniversityCheongju 28503Republic of Korea
出 版 物：《npj Flexible Electronics》 (npj-柔性电子（英文）)
年 卷 期：2022年第6卷第1期
页 面：863-870页
核心收录：
学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）]
基 金：supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF)funded by the Ministry of Education (NRF-2018R1A6A1A03025340) Ministry of Science,Technology,ICT,and Future Planning (NRF-2021R1A2B5B02001961) supported by the program of Phased development of carbon neutral technologies through the National Research Foundation of Korea (NRF) funded by the Ministry of Science,ICT (NRF2022M3J1A1064229) supported by the DGIST R&D programs of the Ministry of Science and ICT (22-CoE-ET-01)
主 题：optoelectronic stress bending
摘 要：Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat ***,we investigated the electronic band structure and carrier transport mechanism of Cu2ZnSn(S,Se)4(CZTSSe)photovoltaic devices under mechanical *** efficient flexible CZTSSe devices were fabricated controlling the Na *** electronic structure of CZTSSe was deformed with stress as the band gap,valence band edge,and work function *** properties of the bent CZTSSe surface were probed by Kelvin probe force microscopy and the CZTSSe with Na showed less degraded carrier transport compared to the CZTSSe without *** local open-circuit voltage(VOC)on the bent CZTSSe surface decreased due to limited carrier *** reduction of local VOC occurred larger with convex bending than in concave bending,which is consistent with the degradation of device *** study paves the way for understanding the stress-induced optoelectronic changes in flexible photovoltaic devices.
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