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optoelectronic platform and technology

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Frontiers of Information Technology & Electronic Engineering 2019年第4期20卷 439-457页

作者： Wen-hua SHI Wei-ming LV Tian-yu SUN Bao-shun ZHANG Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences

optoelectronic technology is a new technology formed by the combination of photon technology and electronic technology. Photon technology can cause an industrial revolution that supersedes electronic technology, because it will have a deeper impact on industry and society. We review the development of optoelectronic devices and integration technologies. We compare and analyze the development and characteristics of optoelectronic technology platforms, summarize the key manufacturing technologies, introduce several representative optoelectronic devices including flexible devices, and focus on the key breakthrough technologies that need to be achieved. Through a comprehensive review of the development of optoelectronic technology, China should seize the opportunity for a transformation of the optoelectronic technology industry. By drawing on the experiences with advanced optoelectronic platforms and technologies in foreign countries, we should speed up the accumulation and reserves of Chinese industrial talents, pay attention to the accumulation of basic technology, and establish a national optoelectronic technology platform, to greatly enhance domestic levels in these regards and to achieve independent innovations with these devices.

关键词： optoelectronic technology optoelectronic platform Process technology Development and challenges

Observation of regular pulse train in a narrow-band optoelectronic oscillator

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optoelectronics Letters 2024年第2期20卷 94-99页

作者： ZHAO Chunbo TUO Zhuoyue YAO Jiali HE Yuling ZHAI Shenghua MENG Yansong China Academy of Space Technology(Xi’an) Xi’an 710000China National Key Laboratory of Science and Technology on Space Microwave Xi’an 710000China1

We have experimentally observed a new operating state of a regular pulse train in a narrow-band optoelectronic oscillator(OEO) system, where the direct-current(DC) bias of the Mach-Zehnder modulator is set at the maximum value of the transmission transfer function instead of the usual quadrature point. The observed quasi-steady-state pulse train is distinctly periodic, with a period of 10.5 μs and a center frequency of 10 GHz, and resembles a mode-locked OEO in its waveform. The formation of regular pulses here may arise from the dynamic balance of nonlinearity and narrow-band filter effects, with the transient characteristics of the pulses arising mainly from instabilities between the gain and cavity loss. Our results are of great importance for deepening the understanding of the nonlinear dynamical processes in OEO systems.

关键词： optoelectronic pulse modulator

Assessing the optoelectronic behavior of soiled silicon photovoltaic cell under harsh environmental conditions

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optoelectronics Letters 2023年第6期19卷 327-331页

作者： Lamis Amrr Sameh O.Abdellatif Khaled Kirah Hani A.Ghali The Renewable Energy Postgraduate Programme and the FabLab in the Centre for Emerging Learning Technologies (CELT) The British University in Egypt (BUE)Cairo 11837Egypt FabLab in the Centre for Emerging Learning Technologies (CELT) Electrical Engineering DepartmentFaculty of EngineeringThe British University in Egypt (BUE)Cairo 11837Egypt Engineering Physics Department Faculty of EngineeringAin Shams UniversityCairoEgypt

In the current study,a monocrystalline Si photovoltaic(PV) cell was modeled using solar cell capacitance simulator(SCAPS) to demonstrate the optoelectronic performance of the cell under harsh environmental conditions.Harsh conditions are simulated in terms of wind speed and temperature fluctuations within the presence of a dust layer.All models are evaluated with respect to a bare model with no dust layer accumulated and operating under standard test conditions(STC).Accordingly,the PV under-test characteristics have been estimated under continuous wind speed and temperature variations.An interesting behavior for the cell operation under relatively high temperatures with an accumulated dust layer was observed.The short circuit current increased by 61.5% with decreasing open-circuit voltage by 47.3%,showing an overall positive trend for the power harvested.Such behavior contradicts the average temperature performance of cells without dust layer accumulation.A detailed justification is illustrated,where the heat transfer rate with dust accumulation highlighted an incremental increase concerning the bare cell by 14.57%.

关键词： behavior optoelectronic conditions

Contributions of Cs and Rb on Inhibiting Photo-induced Phase Segregation and En-hancement optoelectronic Performances of MA_(1-y)XyPbI_(1.8)Br_(1.2)(X=Cs,Rb)Single Crystals

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Chinese Journal of Structural Chemistry 2022年第5期41卷 77-84页

作者： Qing Yao Kaiyu Wang Jie Zhang Changqian Li Chenyu Shang Feitong Chen Qi Huang Qiqi Zhao Weiwei Zhang Xiaoyuan Zhan Jianxu Ding College of Materials Science and Engineering Shandong University of Science and TechnologyQingdao 266590China

Introducing inorganic cation into hybrid organic-inorganic perovskites(HOIPs)has attracted great attention because of the enhancement stabilities without sacrificing their excellent optoelectronic properties.Here,we introduce Cs and Rb into MAPbI_(1.8)Br_(1.2)single crystals(SCs)to dig out the mixed cation effect on optoelectronic performances and phase stabilities.Both Rb and Cs can increase the lattice capacity,which is sufficient to relieve the lattice stress caused by photon energy,thus achieving the purpose of stabilizing the lattice structure and inhibiting migration of halide ions,compared with MAPbI_(1.8)Br_(1.2)SC.On the other hand,the smaller polarity of Rb and Cs reduces the electron-phonon coupling,thus significantly inhibiting the migration of halide ions.Meanwhile,through planar photo-detectors,MA_(0.9)Cs_(0.1)PbI_(1.8)Br_(1.2)-based device behaves much excellent optoelectronic performance(R=0.170 A/W,EQE=51.39%,D^(*)=4.42×10^(12)Jones,on/off ratio:~522).

关键词： perovskite single crystal photo-induced phase segregation mixed A-cation optoelectronic performances

Customizable 2D Covalent Organic Frameworks for Optoelec-tronic Applications

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Chinese Journal of Chemistry 2023年第10期41卷 1260-1285页

作者： Mingchao Shao Yunqi Liu Yunlong Guo Beijing National Laboratory for Molecular Sciences Institute of ChemistryChinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China

2D covalent organic framework(2D-COF),a modular three-dimensional material,is easily influenced by the component module.The assembly of different functionalized modules gives 2D-COF unique performance.The modular structure not only allows for customi-zation but also allows for variety,which gives 2D-COF a wide range of functions.Hence,many building blocks with catalytic,ligand,semiconductor,luminescent,and redox centers are integrated into the COF scaffold.The connection and assembly of such modules determine the nature of the final block material.The intra-layer connections of the modules form a monolayer mesh chemical structure,and the subsequent stacking of the monolayer mesh structure produces the final crystalline porous material-2D-COF.This review describes in detail the potential of COF materials as optoelectronic materials and our understanding of optoelectronic processes,starting from monolayer reticulation chemistry to final 3D stacked structures,thus establishing a new paradigm for the ra-tional design of well-defined novel 2D-COF optoelectronic materials and devices.

关键词： 2D covalent organic frameworks optoelectronic π-Conjugation Stacking Doping Charge transfer Organic electronics Donor-acceptor systems

Writing perovskite optoelectronic devices with ballpoint pens

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Science China Materials 2023年第10期66卷 4135-4136页

作者： Ying Li Guozhen Shen School of Integrated Circuits and Electronics Beijing Institute of TechnologyBeijing 100081China Institute of Flexible Electronics Beijing Institute of TechnologyBeijing 102488China

Flexible optoelectronic devices have wide application prospects in wearable and portable electronic products because of their advantages of high power per unit weight,high flexibility and low cost[1,2].Traditional preparation processes of flexible device such as spin-coating,vacuum-based evaporation/sputtering and etching,yield high reproducibility and device performance[3,4].

关键词： perovskite optoelectronic portable

optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template

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Chinese Physics B 2011年第3期20卷 416-419页

作者：姜威高红徐玲玲马佳宁张锷魏平林家齐 Heilongjiang Key Laboratory for Low-Dimensional System and Mesoscopic Physics School of Physics and Electronic EngineeringHarbin Normal University Harbin University of Science and Technology

optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes （λ= 505 nm, 460 nm, 375 nm） as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device.

关键词： ZnO nanowire optoelectronic micro-grid template

Investigating the influence of the counter Si-cell on the optoelectronic performance of high-efficiency monolithically perovskites/silicon tandem cells under various optical sources

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optoelectronics Letters 2023年第4期19卷 215-221页

作者： Moustafa Ganoub Sameh O.Abdellatif Khaled Kirah Hani A.Ghali The Renewable Energy Postgraduate Programme and the FabLab in the Centre for Emerging Learning Technologies (CELT) The British University in Egypt (BUE)Cairo 11837Egypt FabLab in the Centre for Emerging Learning Technologies (CELT) Electrical Engineering DepartmentFaculty of EngineeringThe British University in Egypt (BUE)Cairo 11837Egypt Engineering Physics Department Faculty of EngineeringAin Shams UniversityCairoEgypt

Nowadays,tandem structures have become a valuable competitor to conventional silicon solar cells,especially for perovskite over silicon,as metal halides surpassed Si with tunable bandgaps,high absorption coefficient,low deposition,and preparation costs.This led to a remarkable enhancement in the overall efficiency of the whole cell and its characteristics.Consequently,this expands the usage of photovoltaic technology in various fields of applications not only under conventional light source spectrum in outdoor areas,i.e.,AM1.5G,but also under artificial light sources found indoors with broadband intensity values,such as Internet of things(Io Ts)applications to name a few.We introduce a numerical model to analyze perovskite/Si tandem cells(PSSTCs)using both crystalline silicon(c-Si)and hydrogenated amorphous silicon(a-Si:H)experimentally validated as base cells.All proposed layers have been studied with J-V characteristics and energy band diagrams under AM1.5G by using SCAPS-1D software version_(3).7.7.Thereupon,the proposed architectures were tested under various artificial lighting spectra.The proposed structures of Li_(4)Ti_(5)O_(12)/CsPbCl_(3)/MAPbBr_(3)/CH_(3)NH_(3)PbI_(3)/Si recorded a maximum power conversion efficiency(PCE)of 25.25%for c-Si and 17.02%for a-Si:H,with nearly 7%enhancement concerning the Si bare cell in both cases.

关键词： optoelectronic sources artificial

Polarization-Dependent Optical Properties and optoelectronic Devices of 2D Materials

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Research 2020年第1期2020卷 848-882页

作者： Ziwei Li Boyi Xu Delang Liang Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials and EngineeringHunan UniversityChangshaHunan 410082China

The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms,and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information.Two-dimensional(2D)materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications,including anisotropic materials,valleytronic materials,and other hybrid heterostructures.In this review,we first review the polarized-light-dependent physical mechanism in 2D materials,then present detailed descriptions in optical and optoelectronic properties,involving Raman shift,optical absorption,and light emission and functional optoelectronic devices.Finally,a comment is made on future developments and challenges.The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.

关键词： optoelectronic polarization polarized