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Journal of Materials Science and Chemical Engineering 2018年第1期6卷 19-24页

作者： Hiroki Nakaie Tetsuji Arai Keisuke Arimoto Junji Yamanaka Kiyokazu Nakagawa Kazuki Kamimura Toshiyuki Takamatsu Interdisciplinary Graduate School of Medicine and Engineering University of Yamanashi Kofu Japan sst inc. Yachiyo Japan

We have developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.0 × 1021 m?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 5 sccm. We confirmed that the temperatures of tungsten films inc.eased to above 1000?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of tungsten films deposited on amorphous silicon films on glass substrates and formed polycrystalline silicon films. To utilize this method, we can perform the crystalline process only on device regions. TFTs were fabricated on the polycrystalline silicon films and the electron mobilities of 60 cm2/Vs were obtained.

关键词： Microwave Plasma Heating Poly-Si Thin Film Transistor

Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers

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Journal of Materials Science and Chemical Engineering 2017年第1期5卷 42-47页

作者： Hiroki Nakaie Tetsuji Arai Chiaya Yamamoto Keisuke Arimoto Junji Yamanaka Kiyokazu Nakagawa Toshiyuki Takamatsu Interdisciplinary Graduate School of Medicine and Engineering University of Yamanashi Kofu Japan sst inc. Yachiyo Japan

We have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating the W, dislocations in Ge layers originated from lattice mismatch between Ge and Si crystals were reduced drastically. We have fabricated p- MOSFETs on Ge/Si substrates and realized higher mobility of about 380 cm2/ Vs than that of Si p-MOSFET.

关键词： Microwave Plasma Heating High Hole Mobility Ge on Si

Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices

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Journal of Materials Science and Chemical Engineering 2016年第1期4卷 29-33页

作者： Tetsuji Arai Hiroki Nakaie Kazuki Kamimura Hiroyuki Nakamura Satoshi Ariizumi Satoki Ashizawa Keisuke Arimoto Junji Yamanaka Tetsuya Sato Kiyokazu Nakagawa Toshiyuki Takamatsu Interdisciplinary Graduate School of Medicine and Engineering University of Yamanashi Kofu Japan sst inc. Yachiyo Japan

We developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.1 × 1021 m?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 10 sccm. We confirmed that the temperatures of transition-metal films inc.eased to above 800。C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of nickel films deposited on silicon wafers and formed nickel silicide electrodes. We found that this heat phenomenon automatically stopped after the nickel slicidation reaction finished. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability of silicon ultralarge-scale integration devices.

关键词： Selective Heating Nickel Silicide Electrode Hydrogen Plasma Microwave Plasma

Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation

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Journal of Materials Science and Chemical Engineering 2017年第1期5卷 35-41页

作者： Tetsuji Arai Kazuki Kamimura Chiaya Yamamoto Mai Shirakura Keisuke Arimoto Junji Yamanaka Kiyokazu Nakagawa Toshiyuki Takamatsu Masaaki Ogino Masaaki Tachioka Haruo Nakazawa Interdisciplinary Graduate School of Medicine and Engineering University of Yamanashi Kofu Japan sst inc. Yachiyo Japan Fuji Electric Co. Ltd. Matsumoto Japan

We developed an apparatus for producing high-density hydrogen plasma. We confirmed that the temperatures of transition-metal films inc.eased to above 800?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of W/Ni films deposited on n+4H-SiC wafers and formed nickel silicide electrodes. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability.

关键词： Selective Heating Nickel Silicide Electrode Hydrogen Plasma Ohmic Contact SiC

Ge_2Sb_2Te_5材料与非挥发相转变存储器单元器件特性

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功能材料 2005年第8期36卷 1196-1199页

作者：凌云林殷茵赖连章乔保卫赖云锋冯洁汤庭鳌蔡炳初 Bomy.Chen 复旦大学微电子学系ASIC与系统国家重点实验室上海交通大学微纳米研究院 sst inc.1171 Sonora Court Sunnyvale CAUSA 94086

对Ge2Sb2Te5材料的结构、形貌和电学特性进行了表征,将材料应用于不挥发存储单元器件中并研究了器件性能。研究了退火温度对薄膜电阻率的影响,发现在从高阻向低阻状态转变的过程中,电阻率下降的趋势发生变化,形成拐点,分析表明这是由于... 详细信息

对Ge2Sb2Te5材料的结构、形貌和电学特性进行了表征,将材料应用于不挥发存储单元器件中并研究了器件性能。研究了退火温度对薄膜电阻率的影响,发现在从高阻向低阻状态转变的过程中,电阻率下降的趋势发生变化,形成拐点,分析表明这是由于在拐点处结构由面心立方向密排六方结构转变所致;对不同厚度Ge2Sb2Te5薄膜的电阻率进行了分析,结果表明当厚度薄于70nm时,电阻率随厚度显著上升而迁移率下降,材料晶态电学性能的测量显示,材料有正电阻温度系数并以空穴导电;测量了Ge2Sb2Te5非挥发相转变存储器单元的I-V曲线,发现有阈值特性,在晶态时电学特性呈欧姆特性,非晶态时I-V低场为线性关系,电场较高时呈指数关系。

关键词：非晶半导体阈值电压相变存储器

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用分离栅极闪存单元实现可编程逻辑阵列

中国集成电路 2014年第12期23卷 50-53页

作者： Henry Om’mani Mandana Tadayoni Nitya Thota Ian Yue Nhan Do Microchip Technology Inc.的子公司Silicon Storage Technology 450 Holger Way San Jose

我们开发了一种新型可配置逻辑阵列测试结构,它采用高度可伸缩且兼具功耗低和配置时间短两大优势的第3代分离栅极闪存单元。此分离栅极Super Flash配置元件(SCE)已通过90nm嵌入式闪存技术进行了演示。得到的SCE消除了对深奥的制造工... 详细信息

我们开发了一种新型可配置逻辑阵列测试结构,它采用高度可伸缩且兼具功耗低和配置时间短两大优势的第3代分离栅极闪存单元。此分离栅极Super Flash配置元件(SCE)已通过90nm嵌入式闪存技术进行了演示。得到的SCE消除了对深奥的制造工艺、检测和SRAM电路的需求,并缩短了可编程阵列(PA)(例如,FPGA和CPLD)的配置时间。此外,SCE本身还具有sst分离栅极闪存技术的优点,包括紧凑的区域、低电压读操作、低功耗多晶硅间(pol y-t o-pol y)擦除、源极侧通道热电子(SSCHE)注入编程机制以及超高的可靠性。

关键词： CPLD FPGA 可编程逻辑阵列分离栅极闪存