Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers

作     者：Hiroki Nakaie Tetsuji Arai Chiaya Yamamoto Keisuke Arimoto Junji Yamanaka Kiyokazu Nakagawa Toshiyuki Takamatsu 

作者机构：Interdisciplinary Graduate School of Medicine and Engineering University of Yamanashi Kofu Japan SST Inc. Yachiyo Japan 

出 版 物：《Journal of Materials Science and Chemical Engineering》 (材料科学与化学工程（英文）)

年 卷 期：2017年第5卷第1期

页      面：42-47页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：Microwave Plasma Heating High Hole Mobility Ge on Si 

摘      要：We have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating the W, dislocations in Ge layers originated from lattice mismatch between Ge and Si crystals were reduced drastically. We have fabricated p- MOSFETs on Ge/Si substrates and realized higher mobility of about 380 cm2/ Vs than that of Si p-MOSFET.