Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices

作     者：Tetsuji Arai Hiroki Nakaie Kazuki Kamimura Hiroyuki Nakamura Satoshi Ariizumi Satoki Ashizawa Keisuke Arimoto Junji Yamanaka Tetsuya Sato Kiyokazu Nakagawa Toshiyuki Takamatsu Tetsuji Arai;Hiroki Nakaie;Kazuki Kamimura;Hiroyuki Nakamura;Satoshi Ariizumi;Satoki Ashizawa;Keisuke Arimoto;Junji Yamanaka;Tetsuya Sato;Kiyokazu Nakagawa;Toshiyuki Takamatsu

作者机构：Interdisciplinary Graduate School of Medicine and Engineering University of Yamanashi Kofu Japan SST Inc. Yachiyo Japan 

出 版 物：《Journal of Materials Science and Chemical Engineering》 (材料科学与化学工程（英文）)

年 卷 期：2016年第4卷第1期

页      面：29-33页

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

主　　题：Selective Heating Nickel Silicide Electrode Hydrogen Plasma Microwave Plasma 

摘      要：We developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.1 × 1021 m?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 10 sccm. We confirmed that the temperatures of transition-metal films increased to above 800。C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of nickel films deposited on silicon wafers and formed nickel silicide electrodes. We found that this heat phenomenon automatically stopped after the nickel slicidation reaction finished. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability of silicon ultralarge-scale integration devices.