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A 1.8-V 240-MHz 2.19-mW Four-Stage CMOS OTA with a Segmenting Frequency Compensation Technique

Chinese Journal of Electronics 2021年第5期30卷 853-860页

作者： LIANG Yuhua ZHENG Zirui LIU Shubin LI Dengquan DING Ruixue ZHU Zhangming School of microelectronics Xidian University

A four-stage Operational transconductance amplifier(OTA) used in an infrared temperature sensor adopting the proposed Feed-forward Gm-stage and segmenting nested Miller compensation technique is presented. The purpose of the proposed segment compensation is primarily to make more amplifier stages concatenated. The circuit linked several transconductance stages to form a segment, and linked several segments to form a large multistage amplifier. For example, a twostage amplifier linked with a three-stage amplifier can realize a five-stage amplifier, two three-stage amplifiers linked can realize a six-stage amplifier. A four-stage amplifier in the form of 2+2(two stages and two stages)was used as an example to verify this compensation method. The proposed OTA is designed in the 180 nm complementary metal oxide semiconductor process. It consists of two parts which ensure the stability and improve the bandwidth performance. The first part is a feedforward transconductance stage, and the second part is the two-segment transconductance stages with the Miller compensation techniques employed within and between the two segments. Based on the small-signal model,stability analysis and theoretical derivation are performed in theory. On condition of a 2-pF load capacitance, a direct current gain of 109 dB and a gain-bandwidth of 240 MHz with a phase margin of 50° can be achieved. The proposed design consumes 2.19 mW in a 1.8-V supply voltage. The transient simulation indicates that the settling time of the output is 19 ns with the settling error being 1%, and the slew rate is 114 V/μs.

关键词： six-stage amplifier power 2.19 mW time 19.0 ns transient simulation four-stage Operational transconductance amplifier theoretical derivation compensation large multistage amplifier four-stage amplifier operational amplifiers five-stage amplifier small-signal model three-stage amplifier segmenting frequency compensation technique phase margin bandwidth performance complementary metal oxide semiconductor process CMOS analogue integrated circuits gain 109.0 dB feedforward amplifiers stability analysis two-stage amplifier capacitance 2 pF multistage amplifier two-segment transconductance stages integrated circuit design voltage 1.8 V four-stage CMOS OTA segmenting nested Miller compensation technique circuit stability bandwidth 240.0 MHz size 180.0 nm feedforward transconductance stage

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Realization of Low in-Band Harmonic for Compact 6–18-GHz T/R Module Under TX-Mode Operation

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Chinese Journal of Electronics 2024年第2期33卷 380-384页

作者： Jinming LAI Zhiyou LI Chaojie WANG Hailong WANG Xiaohua MA School of microelectronics Xidian University CETC 29th research Institute

Wideband high power amplifier(PA) with poor harmonic suppression will degrade the performance of the active electronically scanned array(AESA) due to its harmonic products falling into the operating bandwidth of a wideband T/R module. In view of this, a compact reconfigurable harmonic suppress circuit(HSC) is proposed to achieve low in-band harmonic for compact T/R module with multiple octaves under TX-mode operation. The HSC consists of eight microstrip resonant stubs with high impedance and multiple p-i-n switches. By controlling the p-i-n switches, the HSC can work in three states. When six of the used p-i-n switches are “ON” state, the corresponding microstrip resonant stubs are loaded onto the 50 Ω transmission line, which performs a bandstop filter(BSF). For verification, the HSC with bandwidth of 12–15 GHz/15–18 GHz is designed to apply to a 6–18 GHz T/R module. As a result, the second harmonic of 6–9 GHz transmitting signal can be suppressed below 32 d Bc when compared to the PA's fundamental output. While the p-i-n switches are “OFF” state, the HSC is almost the same as a 50 Ω transmission line, which will have a little effect on the 9–18 GHz transmitting signal. The measurement results approximately agree with the calculated results and simulated results, which demonstrate the validity of the proposed HSC.

关键词： Microstrip filters Harmonics suppression Power transmission lines PIN photodiodes Switches Harmonic analysis Transmission line measurements

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Antenna-in-package system integrated with meander line antenna based on LTCC technology

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Frontiers of Information Technology & Electronic Engineering 2016年第1期17卷 67-73页

作者： Gang DONG Wei XIONG Zhao-yao WU Yin-tang YANG School of microelectronics Xidian University

We present an antenna-in-package system integrated with a meander line antenna based on low temperature co-fired ceramic(LTCC) technology. The proposed system employs a meander line patch antenna, a packaging layer, and a laminated multi-chip module(MCM) for integration of integrated circuit(IC) bare chips.A microstrip feed line is used to reduce the interaction between patch and package. To decrease electromagnetic coupling, a via hole structure is designed and analyzed. The meander line antenna achieved a bandwidth of 220 MHz with the center frequency at 2.4 GHz, a maximum gain of 2.2 d B, and a radiation efficiency about 90% over its operational frequency. The whole system, with a small size of 20.2 mm×6.1 mm×2.6 mm, can be easily realized by a standard LTCC process. This antenna-in-package system integrated with a meander line antenna was fabricated and the experimental results agreed with simulations well.

关键词： Antenna-in-package(Ai P) Meander line antenna Multi-chip module(MCM) Low temperature co-fired ceramic(LTCC)

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A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure

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Chinese Physics B 2014年第12期23卷 254-262页

作者：曹琛张冰吴龙胜李娜王俊峰 Xi'an microelectronics Technology Institute

A quantum efficiency analytical model for complementary metal–oxide–semiconductor（CMOS） image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160×160 pixels array,which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.

关键词： CMOS image sensor quantum efficiency pinned photodiode analytical model

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Enhanced photoresponsivity and hole mobility of MoTe_2 phototransistors by using an Al_2O_3 high-κ gate dielectric

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Science Bulletin 2018年第15期63卷 997-1005页

作者： Wenjie Chen Renrong Liang Jing Wang Shuqin Zhang Jun Xu Institute of microelectronics Tsinghua University

Molybdenum ditelluride （MoTe2） has been demonstrated great potential in electronic and optoelectronic applications. However, the reported effective hole mobility remains far below its theoretical value. Herein, taking advantage of high-κ screening effect, we have fabricated back-gated MoTe2 transistors on an Al2O3 high-κ dielectric and systematically investigated the electronic and optoelectronic proper- ties. A high current on/off ratio exceeding 106 is achieved in the Al2O3-based MoTe2 transistors, and the hole mobility is demonstrated to be 150 cm2 V^-1 s^-1, compared to 0.2-20 cm^2 V^-1 s^-1 ever obtained from back-gated MoTe2 transistors in the literatures. Moreover, a considerable hole concentration of 1.2 × 10^13 cm 2 is attained in our Al2O3-based MoTe2 transistors owing to the strong gate control capa- bility, leading to a high on-state hole current of 6.1 μA μm^-1. After optimization, our Al2O3-based MoTe2 phototransistor exhibits outstanding photodetective performance, with a high responsivity of 543 AW^-1 and a high photogain of 1,662 at 405 nm light illumination, which are boosted around 419 times compared to the referential SiO2-based control devices. The mechanisms of photoconductivity in the Al2O3-based MoTe2 phototransistors have been analyzed in detail, and the photogating effect is considered to play an important role. This work may provide useful insight to improve carrier mobility in two-dimensional layered semiconductors and open opportunities to facilitate the development of high-performance photodetectors in the future.

关键词： MoTe2 High-K dielectric Phototransistors Hole mobility Photodetectors

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A novel 2.95–3.65 GHz CMOS LC-VCO using tuning curve compensation

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Journal of Semiconductors 2009年第10期30卷 63-67页

作者：肖时茂马成炎叶甜春 Institute of microelectronics Chinese Academy of Sciences Hangzhou Zhongke microelectronics Co.Ltd

This paper presents a new CMOS LC-VCO with a 2.95–3.65 GHz tuning *** large tuning range is achieved by tuning curve compensation using a novel varactor configuration,which is mainly composed of four accumulation-mode MOS varactors（A-MOS）and two bias *** proposed varactor has the advantages of optimizing quality factor and tuning range simultaneously,linearizing the effective capacitance and thus greatly reducing the amplitude-to-phase modulation（AM-PM）*** circuit is validated by simulations and fabricated in a standard 0.18μm 1P6M CMOS *** phase noise is lower than–91 dBc at 100 kHz offset from a 3.15 GHz carrier while measured tuning range is 21.5%as the control voltage varies from 0 to 1.8 *** VCO including buffers consumes 2.8 mA current from a 1.8 V supply.

关键词： CMOS A-MOS voltage-controlled oscillator tuning curve compensation

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A Fully-Integrated Low-Power Analog Front-End for ZigBee Transmitter Applications

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Chinese Journal of Electronics 2016年第3期25卷 424-431页

作者： SHI Zuochen YANG Yintang LI Di LIU Yang School of microelectronics Xidian University

A low-power high-linearity Analog frontend(AFE) composed by a Digital-to-analog converter(DAC) and a Low-pass filter(LPF) is proposed in this paper for Zig Bee transmitter applications. The DAC is realized by current-steering topology which adopts an optimized segmentation method to resolve the contradiction between requirements of linearity and power. A Successive approximation register(SAR) frequency auto-tuning operation is presented for the LPF to accommodate the performance deterioration due to the Process, voltage and temperature(PVT) variations. Implemented in a 0.13μm CMOS technology, the proposed AFE has been fully integrated in a ZigBee transceiver chip with an area of0.23mm2. The experimental results demonstrate that it achieves a linearity of 30 dB m Output 3rd order intercept point(OIP3) and dissipates 4.75 m A from a 1.2V supply.

关键词： Analog front-end ZigBee transmitter Segmented current-steering Auto-tuning

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Searching high gray scale FPD scanning matrix based on PSO

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Journal of Shanghai University(English Edition) 2011年第3期15卷 207-211页

作者：严利民王念田锋 microelectronics research and Development Center Shanghai University

With the increase of gray scale and flat panel display （FPD） size, subspace bitwise scanning strategy can be replaced traditional scanning method to cut down frame frequency. However, the direct searching strategy （DSS） becomes unfeasible to obtain corresponding high gray scale scanning matrix. Thus, particle swarm optimization （PSO） is introduced to accelerate searching for high gray scale weights scanning matrix （WSM） with its parallelism and global optimization feature. Finally a WSM of 256 gray scales is found out successfully with Matlab, which both gray linearity and scanning efficiency are satisfied.

关键词： flat panel display (FPD) gray scale scanning efficiency (SE) weights scanning matrix (WSM) particle swarm optimization (PSO)

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Continuous time sigma delta ADC design and non-idealities analysis

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Journal of Semiconductors 2011年第12期32卷 128-133页

作者：袁俊张钊锋吴俊王超陈珍海钱文荣杨银堂 School of microelectronics Xidian University Shanghai Advanced research Institute Chinese Academy of Sciences Marvell Technology Group Ltd.

A wide bandwidth continuous time sigma delta ADC is implemented in 130 nm CMOS. A detailed nonidealities analysis （excess loop delay, clock jitter, finite gain and GBW, comparator offset and DAC mismatch） is performed developed in Matlab/Simulink. This design is targeted for wide bandwidth applications such as video or wireless base-stations. A third-order continuous time sigma delta modulator comprises a third-order RC operational- amplifier-based loop filter and 3-bit internal quantizer operated at 512 MHz clock frequency. The sigma delta ADC achieves 60 dB SNR and 59.3 dB SNDR over a 16-MHz signal band at an OSR of 16. The power consumption of the CT sigma delta modulator is 22 mW from the 1.2-V supply.

关键词： ADC continuous time sigma delta ADC low power design sigma delta modulation

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Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

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Chinese Physics B 2014年第11期23卷 661-665页

作者：沈泽南夏洋刘邦武刘金虎李超波李勇滔 Key Laboratory of microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.

关键词： solar cells plasma immersion ion implantation conformal doping black silicon

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