Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation
Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation作者机构：Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences
出 版 物：《Chinese Physics B》 (中国物理B（英文版）)
年 卷 期：2014年第23卷第11期
页 面：661-665页
核心收录：
学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学]
基 金：supported by the National Natural Science Foundation of China(Grant Nos.61106060 and 61274059) the National High Technology Research and Development Program of China(Grant No.2012AA052401)
主 题：solar cells plasma immersion ion implantation conformal doping black silicon
摘 要：Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.
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