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A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO_2 /Si stacked MOSFETs

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Chinese Physics B 2012年第10期21卷 439-445页

作者：马飞刘红侠樊继斌王树龙 Key laboratory of the Ministry of Education for Wide Band-Gap semiconductor Material and Devices School of MicroelectronicsXidian University

In this paper the influences of the metal-gate and high-k/SiO 2 /Si stacked structure on the metal-oxide-semiconductor field-effect transistor（MOSFET） are *** flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function *** two-dimensional Poisson＇s equation of potential distribution is presented.A threshold voltage analytical model for metal-gate/high-k/SiO 2 /Si stacked MOSFETs is developed by solving these Poisson＇s equations using the boundary *** model is verified by a two-dimensional device simulator,which provides the basic design guidance for metal-gate/high-k/SiO 2 /Si stacked MOSFETs.

关键词： metal-gate high-k work function flat-band voltage threshold voltage metal-oxide-semiconductor field-effect transistor

Semipolar(1122) and polar(0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition

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Chinese Physics B 2017年第2期26卷 467-472页

作者： Sheng-Rui Xu Ying Zhao Ren-Yuan Jiang Teng Jiang Ze-Yang Ren Jin-Cheng Zhang Yue Hao Key laboratory of Wide Band-Gap semiconductor Technology School of Microelectronics Xidian University Xi＇ an 710071 China

High indium semipolar（1122） and polar（0001） In Ga N layers each with a thickness of about 100 nm are realized simultaneously on sapphire substrates by pulsed metal organic chemical vapor deposition（MOCVD）. The morphology evolution, structural and optical characteristics are also studied. The indium content in the layer of the surface（1122）is larger than that of the surface（0001）, which is confirmed by reciprocal space map, photoluminescence spectrum and secondary ion mass spectrometer. Additionally, the（0001） surface with island-like morphology shows inhomogeneous indium incorporation, while the（1122） surface with a spiral-like morphology shows a better homogeneous In *** feature is also demonstrated by the monochromatic cathodoluminescence map.

关键词： semipolar GaN MOCVD

An analytical threshold voltage model for dual-strained channel PMOSFET

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Chinese Physics B 2010年第11期19卷 608-614页

作者：秦珊珊张鹤鸣胡辉勇戴显英宣荣喜舒斌 Key laboratory of Ministry of Education for Wide Band-Gap semiconductor Materials and Devices School of MicroelectronicsXidian University

Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor （PMOSFET）, analytical expressions of the threshold voltages for buried channel and surface channel are presented. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel （compressive strained SiGe） than in the surface channel （tensile strained Si）, because the hole mobility in the buried channel is higher than that in the surface channel. Thus they offer a good accuracy as compared with the results of device simulator ISE. With this model, the variations of threshold voltage and maximum allowed thickness of s-Si with design parameters can be predicted, such as Ge fraction, layer thickness, and doping concentration. This model can serve as a useful tool for p-channel s-Si/s-SiGe/Si1-yGey metal-oxide-semiconductor field-effect transistor （MOSFET） designs.

关键词： strained Si strained SiGe dual-channel metal-oxide-semiconductor field-effect transistor (MOSFET) threshold voltage

The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET

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Chinese Physics B 2013年第2期22卷 539-544页

作者：王斌张鹤鸣胡辉勇张玉明周春宇王冠宇李妤晨 Key laboratory of Ministry of Education for Wide Band-Gap semiconductor Materials and Devices School of MicroelectronicsXidian University

The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor（pMOSFET） has been *** physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and experimental data,the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been *** proposed model can provide a valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of a strained-Si MOSFET.

关键词： strained-Si pMOSFET flatband voltage threshold voltage doping

Depth-dependent mosaic tilt and twist in GaN epilayer:An approximate evaluation

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Chinese Physics B 2014年第6期23卷 569-573页

作者：张金风聂玉虎周勇波田坤哈微肖明张进成郝跃 School of Microelectronics Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of EducationXidian University

An approach based on depth-sensitive skew-angle x-ray diffraction （SAXRD） is presented for approximately evalu- ating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that （103） plane and （101） plane, among the lattice planes not perpendicular to the sample surface, are the best choices to measure the depth profiles of tilt and twist for a GaN epilayer with a thickness of less than 2 μm according to the diffraction geometry of SAXRD. As an illustration, the depth-sensitive （103）/（101） ω-scans of a 1.4-μm GaN film grown by metal-organic chemical vapor deposition on sapphire substrate are measured and analyzed to show the feasibility of this approach.

关键词： mosaic structure tilt and twist skew angle x-ray diffraction GaN

Quantum compact model for thin-body double-gate Schottky barrier MOSFETs

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Chinese Physics B 2008年第8期17卷 3077-3082页

作者：栾苏珍刘红侠 School of Microelectronics Xidian University Key laboratory of Ministry of Education for Wide Band-Gap semiconductor Materials and Devices

Nanoscale Schottky barrier metal oxide semiconductor field-effect transistors （MOSFETs） are explored by using quantum mechanism effects for thin-body devices. The results suggest that for small nonnegative Schottky barrier heights, even for zero barrier height, the tunnelling current also plays a role in the total on-state current. Owing to the thin body of device, quantum confinement raises the electron energy levels in the silicon, and the tradeoff takes place between the quantum confinement energy and Schottky barrier lowering （SBL）. It is concluded that the inclusion of the quantum mechanism effect in this model, which considers an infinite rectangular well with a first-order perturbation in the channel, can lead to the good agreement with numerical result for thin silicon film. The error increases with silicon thickness increasing.

关键词： Schottky barrier quantum mechanism effects effective mass electron density

Raman scattering studies on manganese ion-implanted GaN

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Chinese Physics B 2009年第4期18卷 1637-1642页

作者：徐大庆张义门张玉明李培咸王超 Key laboratory of Ministry of Education for Wide Band-Gap semiconductor Materials and Devices School of Microelectronics Xidian University

This paper reports that the Raman spectra have been recorded on the metal-organic chemical vapour deposition epitaxially grown GaN before and after the Mn ions implanted. Several Raman defect modes have emerged from the implanted samples. The structures around 182 cm^-1 modes are attributed to the disorder-activated Raman scattering, whereas the 361 cm^-1 and 660cm^-1 peaks are assigned to nitrogen vacancy-related defect scattering. One additional peak at 280 cm^-1 is attributed to the vibrational mode of gallium vacancy-related defects and/or to disorder activated Raman scattering. A Raman-scattering study of lattice recovery is also presented by rapid thermal annealing at different temperatures between 700 ℃ and 1050℃ on Mn implanted CaN epilayers. The behaviour of peak-shape change and full width at half maximum （FWHM） of the A1（LO）（733cm^-1） and EH （566cm^-1） Raman modes are explained on the basis of implantation-induced lattice damage in GaN epilayers.

关键词： diluted magnetic semiconductors gallium nitride implantation Raman spectroscopy

Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-k Gate Dielectric

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Chinese Physics Letters 2012年第12期29卷 181-184页

作者： LIU Hong-Xia MA Fei Key laboratory of Wide Bandgap semiconductor Materials and Devices of Ministry of Education Xidian UniversityXi'an 710071

The off-state leakage current characteristics of nanoscale channel metal-oxide-semiconductor field-effect transistors with a high-k gate dielectric are thoroughly *** off-state leakage current can be divided into three components:the gate leakage current,the source leakage current,and the substrate leakage *** influences of the fringing-induced barrier lowering effect and the drain-induced barrier lowering effect on each component are investigated *** nanoscale devices with high-k gates,the source leakage current becomes the major component of the off-state leakage current.

关键词： MOSFETs barrier component

A digitally controlled AGC loop circuitry for GNSS receiver chip with a binary weighted accurate dB-linear PGA

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Journal of semiconductors 2015年第3期36卷 114-120页

作者：靳刚庄奕琪阴玥崔淼 Wide Bandgap semiconductor Technology Disciplines State Key laboratory School of Microelectronics Xidian University

A novel digitally controlled automatic gain control （AGC） loop circuitry for the global navigation satel- lite system （GNSS） receiver chip is presented. The entire AGC loop contains a programmable gain amplifier （PGA）, an AGC circuit and an analog-to-digital converter （ADC）, which is implemented in a 0.18 μm complementary metal--oxide-semiconductor （CMOS） process and measured. A binary-weighted approach is proposed in the PGA to achieve wide dB-linear gain control with small gain error. With binary-weighted cascaded amplifiers for coarse gain control, and parallel binary-weighted trans-conductance amplifier array for fine gain control, the PGA can provide a 64 dB dynamic range from -4 to 60 dB in 1.14 dB gain steps with a less than 0.15 dB gain error. Based on the Gaussian noise statistic characteristic of the GNSS signal, a digital AGC circuit is also proposed with low area and fast settling. The feed-backward AGC loop occupies an area of 0.27 mm^2 and settles within less than 165 μs while consuming an average current of 1.92 mA at 1.8 V.

关键词： PGA binary-weighted AGC loop GNSS Gaussian noise