The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET

作     者：王斌 张鹤鸣 胡辉勇 张玉明 周春宇 王冠宇 李妤晨 

作者机构：Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesSchool of MicroelectronicsXidian University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2013年第22卷第2期

页      面：539-544页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the Funds from the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801) the Fundamental Research Funds for the Central Universities (Grant Nos. 72105499 and 72104089) the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008) 

主　　题：strained-Si pMOSFET flatband voltage threshold voltage doping 

摘      要：The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor（pMOSFET） has been *** physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and experimental data,the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been *** proposed model can provide a valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of a strained-Si MOSFET.