Depth-dependent mosaic tilt and twist in GaN epilayer:An approximate evaluation

作     者：张金风 聂玉虎 周勇波 田坤 哈微 肖明 张进成 郝跃 

作者机构：School of Microelectronics Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of EducationXidian University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2014年第23卷第6期

页      面：569-573页

核心收录：

学科分类：070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：supported by the Young Scientists Fund of the National Natural Science Foundation of China(Grant Nos.61306017 and 61204006) the Key Program of the National Natural Science Foundation of China(Grant No.61334002) the Fundamental Research Funds for the Central Universities of China(Grant Nos.K5051225016 and K5051325020) 

主　　题：mosaic structure tilt and twist skew angle x-ray diffraction GaN 

摘      要：An approach based on depth-sensitive skew-angle x-ray diffraction （SAXRD） is presented for approximately evalu- ating the depth-dependent mosaic tilt and twist in wurtzite c-plane GaN epilayers. It is found that （103） plane and （101） plane, among the lattice planes not perpendicular to the sample surface, are the best choices to measure the depth profiles of tilt and twist for a GaN epilayer with a thickness of less than 2 μm according to the diffraction geometry of SAXRD. As an illustration, the depth-sensitive （103）/（101） ω-scans of a 1.4-μm GaN film grown by metal-organic chemical vapor deposition on sapphire substrate are measured and analyzed to show the feasibility of this approach.