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Improved charge trapping flash device with Al_2O_3 /HfSiO stack as blocking layer

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Chinese Physics B 2011年第10期20卷 476-479页

作者：郑志威霍宗亮朱晨昕许中广刘璟刘明 laboratory of nano-fabrication and novel devices integrated technology Institute of Microelectronics Chinese Academy of Sciences

In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon- type （MONOS） memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase （P/E） speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.

关键词： charge trapping flash blocking layer stack

Investigation of charge loss characteristics of HfO_2 annealed in N_2 or O_2 ambient

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Journal of Semiconductors 2014年第8期35卷 43-47页

作者：褚玉琼霍宗亮韩宇龙陈国星张冬李新开刘明 laboratory of nano-fabrication and novel devices integrated technology Institute of Microelectronics Chinese Academy of Sciences

The retention characteristics of electrons and holes in hafnium oxide with post-deposition annealing in a N2 or 02 ambient were investigated by Kelvin probe force microscopy. The KFM results show that compared with the N2 PDA process, the O2 PDA process can lead to a significant retention improvement. Vertical charge leakage and lateral charge spreading both played an important role in the charge loss mechanisms. The retention improvement is attributed to the deeper trap energy. For electrons, the trap energy of the HOS structure annealed in a N2 or 02 ambient were determined to be about 0.44 and 0.49 eV, respectively. For holes, these are about 0.34 and 0.36 eV, respectively. Finally, the electrical characteristics of the memory devices are demonstrated from the experiment, which agreed with our characterization results. The qualitative and quantitative determination of the charge retention properties, the possible charge decay mechanism and trap energy reported in this work can be very useful for the characterization of hafnium charge storage devices.

关键词： KFM Hf02 retention

Design, fabrication and Test of a Soft X-Ray Even-Order Transmission Grating

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Chinese Physics Letters 2009年第9期26卷 81-84页

作者：马杰谢常青刘明陈宝钦叶甜春 Key laboratory of nano-fabrication and novel devices integrated technology lnstititute of Microelectronics Chinese Academy of Sciences Beijing 100029

Most transmission gratings in the x-ray region work with their first orders and dispersion is limited by the line density achievable with current fabrication technology. We present a novel design of a two-dimensional x-ray transmission grating. The grating works with higher dispersion using its second orders, and the influence from first and third orders can be suppressed. A grating according to the novel design is fabricated and its diffraction performance is tested in comparison with a traditional x-ray transmission grating with the same line density. The novel grating could be especially useful when high dispersion is desired while the fabrication of high-density gratings becomes more difficult.

关键词： sea surface nonliear interaction numerical method

Radially and Azimuthally Polarized Beams Generated by a Composite Spiral Zone Plate

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Chinese Physics Letters 2012年第8期29卷 135-138页

作者： HUA Yi-Lei WANG Zi-Qiang LI Hai-Liang GAO Nan DU Yu-Chan Key laboratory of nano-fabrication and novel devices integrated technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029

We present a diffractive method for obtaining azimuthal and radially polarized *** method involves a modified half-wave plate,a composite spiral zone plate,a pinhole and a *** composite spiral zone plates are combined and assisted by a pinhole and a lens,to transform a circularly polarized beam into a radially polarized or an azimuthal polarized *** method is investigated numerically using diffraction *** field distributions on the focal spot of the composite spiral zone plates and the output cylindrical beams are ***,the use of this method to generate cylindrical vector beams is validated.

关键词： theory polarized cylindrical

Unipolar resistive switching of Au^+-implanted ZrO_2 films

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Journal of Semiconductors 2009年第4期30卷 3-6页

作者：刘琦龙世兵管伟华张森刘明陈军宁 laboratory of nano-fabrication and novel devices integrated technology Institute of Microelectronics Chinese Academy of Sciences College of Electronics and technology Anhui University

The resistive switching characteristics of Au＋-implanted ZrO2 films are investigated. The Au/Cr/Au＋ -implanted-ZrO2/n＋-Si sandwiched structure exhibits reproducible unipolar resistive switching behavior. After 200 write-read-erase-read cycles, the resistance ratio between the high and low resistance states is more than 180 at a readout bias of 0.7 V. Additionally, the Au/Cr/Au＋-implanted-ZrO2/n＋-Si structure shows good retention characteristics and nearly 100% device yield. The unipolar resistive switching behavior is due to changes in the film conductivity related to the formation and rupture of conducting filamentary paths, which consist of implanted Au ions.

关键词： RRAM resistive switching ion implantation ZrO2

A novel 2-T structure memory device using a Si nanodot for embedded application

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Journal of Semiconductors 2011年第12期32卷 86-90页

作者：杨潇楠王永张满红霍宗亮刘璟张博刘明 laboratory of nano-fabrication and novel devices integrated technology Institute of MicroelectronicsChinese Academy of Sciences Grace Semiconductor Manufacturing Corporation

Performance and reliability ofa 2 transistor Si nanocrystal nonvolatile memory （NVM） are investigated. A good performance of the memory cell has been achieved, including a fast program/erase （P/E） speed under low voltages, an excellent data retention （maintaining for 10 years） and good endurance with a less threshold voltage shift of less than 10% after 104 P/E cycles. The data show that the device has strong potential for future embedded NVM applications.

关键词： nonvolatile memory nanocrystal reliability

Size dependence of biexciton binding energy in single InAs/GaAs quantum dots

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Chinese Physics B 2009年第6期18卷 2258-2263页

作者：窦秀明孙宝权黄社松倪海桥牛智川杨富华贾锐 SKLSM Institute of SemiconductorsChinese Academy of Sciences laboratory of nano-fabrication and novel devices integrated technology Institute of MicroelectronicsChinese Academy of Sciences

This paper studies the size dependence of biexciton binding energy in single quantum dots （QDs） by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show ＂binding＂ and ＂antibinding＂ properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler London method.

关键词： biexcition binding energy single quantum dots exciton molecular model Heitler-London method

Phase zone photon sieve

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Chinese Physics B 2009年第1期18卷 183-188页

作者：贾佳谢常青 Key laboratory of nano-fabrication and novel Device integrated technology Institute of MicroelectronicsChinese Academy of Sciences

A novel diffractive optical element, named phase zone photon sieve （PZPS）, is presented. There are three kinds of phase plates in PZPSs： PZPS1, PZPS2, and PZPS3. Each of the PZPSs has its own structure and is made on quartz substrate by etching. The three PZPSs have stronger diffraction peak intensity than a photon sieve （PS） when the margin pinhole and zone line width are kept the same. The PZPS3 can produce a smaller central diffractive spot than the ordinary PS with the same number of zones on the Fresnel zone plate. We have given the design method for and the simulation of PZPS and PS. PZPS has potential applications in optical maskless lithography.

关键词： photon sieve Fresnel zone plate diffractive optics

Investigation of resistive switching behaviours in WO_3-based RRAM devices

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Chinese Physics B 2011年第1期20卷 589-595页

作者：李颖弢龙世兵吕杭炳刘琦王琴王艳张森连文泰刘肃刘明 Institute of Microelectronics School of Physical Science and TechnologyLanzhou University laboratory of nano-fabrication and novel devices integrated technology Institute of MicroelectronicsChinese Academy of Sciences

In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.

关键词： resistive random access memory resistive switching nonvolatile WO3