Improved charge trapping flash device with Al_2O_3 /HfSiO stack as blocking layer

作     者：郑志威 霍宗亮 朱晨昕 许中广 刘璟 刘明 

作者机构：Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2011年第20卷第10期

页      面：476-479页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported partially by the National Basic Research Program of China (Grant No. 2010CB934204) the National Natural Science Foundation of China (Grant No. 60825403) the Director’s Fund of Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) the National Science and Technology Major Project of China (Grant No. 2009ZX02023-005) 

主　　题：charge trapping flash blocking layer stack 

摘      要：In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon- type （MONOS） memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase （P/E） speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.