检索结果-南通市图书馆

Large spatial shifts of reflected light beam off biaxial hyperbolic materials

Chinese Physics B 2023年第11期32卷 465-471页

作者：沈加国哈思内恩宋浩元周胜付淑芳王选章王暄张强 Key laboratory for Photonic and Electronic Bandgap Materials Chinese Ministry of Educationand School of Physics and Electronic EngineeringHarbin Normal UniversityHarbin 150025China School of Integrated Circuits Engineering Research Center for Functional CeramicsWuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan 430030China Key laboratory of Engineering dielectrics and Its Application Ministry of EducationHarbin University of Science and TechnologyHarbin 150080China

Many optical systems that deal with polarization rely on the adaptability of controlling light reflection in the lithography-free nanostructure. In this study, we explore the Goos–H?nchen(GH) shift and Imbert–Fedorov(IF) shift in a biaxial hyperbolic film on a uniaxial hyperbolic substrate. This research statistically calculates and analyzes the GH shift and IF shift for the natural biaxial hyperbolic material(NBHM). We select the surface with the strongest anisotropy within the NBHM and obtain the complex beam-shift spectrum. By incorporating the NBHM film, the GH shift caused by a transversely magnetic incident-beam on the surface increases significantly compared with that on the uniaxial hyperbolic material. The maximum of GH shift can reach 86 λ0at about 841 cm-1when the thickness of NBHM is 90 nm, and the IF shift can approach 2.7 λ0for a circularly-polarized beam incident on a 1700-nm-thick NBHM. It is found that the spatialshift increases when a highly anisotropic hyperbolic polariton is excited in hyperbolic material, where the shift spectrum exhibits an oscillating behaviour accompanied with sharp shift peak(steep slope). This large spatial shift may provide an alternative strategy to develop novel sub-micrometric optical devices and biosensors.

关键词： Goos-Hanchen shift Imbert-Fedorov shift α-MoO_(3)

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics

引用

Chinese Physics B 2012年第5期21卷 602-606页

作者：马飞刘红侠匡潜玮樊继斌 Key laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices School of MicroelectronicsXidian University

The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device *** equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL *** FIBL effect is enhanced and the short channel performance is degraded with increasing *** on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain（LDD） overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect.

关键词： high-k gate dielectric fringing-induced barrier lowering stack gate dielectric MOSFET

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Variational principles and governing equations in nano-dielectrics with the flexoelectric effect

引用

Science China(Physics,Mechanics & Astronomy) 2010年第8期53卷 1497-1504页

作者： HU ShuLing SHEN ShengPing MOE Key laboratory for Strength and Vibration School of AerospaceXi’an Jiaotong UniversityXi’an 710049China

The flexoelectric effect is very strong and coupled with large strain gradients for nanoscale dielectrics. At the nanoscale, the electrostatic force cannot be ignored. In this paper, we have established the electric enthalpy variational principle for nanosized dielectrics with the strain gradient and the polarization gradient effect, as well as the effect of the electrostatic force. The complete governing equations, which include the effect of the electrostatic force, are derived from this variational principle, and based on the principle the generalized electrostatic stress is obtained, the generalized electrostatic stress contains the Maxwell stress corresponding to the polarization and strain, and stress related to the polarization gradient and strain gradient. This work provides the basis for the analysis and computations for the electromechanical problems in nanosized dielectric materials.

关键词： flexoelectric effect variational principle governing equations dielectrics electrostatic stress nanoscale

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Structural and dielectric properties of prepared PbS and PbTe nanomaterials

引用

Journal of Semiconductors 2018年第12期39卷 52-59页

作者： A.A.hzab Azza A.Ward G.M.Mahmoud Eman M.El-Hanafy H.El-Zahed F.S.Terra Solid State Physics Department Physical Research DivisionNational Research CentreGizaEgypt Microwave Physics and dielectrics Department Physical Research DivisionNational Research CentreGizaEgypt University Girls College for Arts Scienceand EducationAin Shams UniversityHelioplesCairoEgypt

In this work, PbS and PbTe nanomaterials with various morphologies were synthesized by a hydrothermal method. The structural properties were investigated by using X-ray diffraction(XRD) and corresponding scanning electron microscopy together with their EDX analysis. Both the PbS and PbTe nanomaterials possess good polycrystalline structure. The crystallite size, determined from the XRD data, of PbS is 5 nm whereas the corresponding value of PbTe is 2.69 nm. SEM micrographs reveal that the prepared PbS nanomaterial has starshaped structures, micro-flowers, some cubes, and semi-dendrites, whereas PbTe has semi-flower structures. Additionally, the dielectric properties have been studied in a broad frequency range from 0.1 Hz up to 1 MHz at temperatures from 298-423 K. The real and imaginary parts of the complex dielectric constant ε' and ε" of PbTe are comparatively higher than those of PbS. Moreover, the dielectric data were analyzed on the basis of the electric modulus.

关键词： dielectric properties PbS PbTe SEM EDX electric modulus

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Performance of pentacene-based organic field effect transistors using different polymer gate dielectrics

引用

Optoelectronics Letters 2009年第6期5卷 409-412页

作者：吴仁磊程晓曼郑宏印寿根 Institute of Material Physics Key Laboratory on Display Material and Photoelectric DevicesMinistry of EducationTianjin Key Laboratory of Photoelectric Materials and DeviceTianjin University of Technology School of Science Tianjin University of Technology

Pentacene-based organic field effect transistors(OFETs) are fabricated using poly(methyl methacrylate)(PMMA) and polyimide(PI) as gate dielectrics,*** fabricated OFETs exhibit reasonable device *** field-effect mobility,threshold voltage,and on/off current radio are determined to be 3.214 ×10-2 cm2 /Vs,-28 V,and 1 ×103 respectively for OFETs with PMMA as gate dielectrics,and 7.306×10-3cm2 /Vs,-21 V,and 2 ×102 for OFETs with ***,the dielectric properties of gate insulator layer are tested and the dipole effect at the semiconductor/dielectrics interface is also analyzed by a model of energy level diagram.

关键词：场效应晶体管电性能测试栅介质并五苯聚(甲基丙烯酸甲酯) 聚合物聚甲基丙烯酸甲酯聚酰亚胺

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

AlGaN/GaN MISHEMTs with Sodium-Beta-Alumina as the Gate dielectrics

引用

Chinese Physics Letters 2013年第2期30卷 169-173页

作者： TIAN Ben-Lang CHEN Chao ZHANG Ji-Hua ZHANG Wan-Li LIU Xing-Zhao The State Key laboratory of Electronic Thin Films and Integrated Devices University of Electron Science and Technology of ChinaChengdu 610054

AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors(MISHEMTs)with sodium beta-alumina(SBA)thin films as the gate dielectrics are ***/GaN metal-semiconductor high-electron-mobility transistors(MESHEMTs)and MISHEMTs with Al_(2)O_(3) thin-film gate dielectrics are also fabricated for comparative *** MISHEMTs with SBA gate dielectrics show nearly four orders of magnitude lower gate leakage current and an approximately 60%increase in maximum transconductance,indicating that SBA can serve as an effective dielectric for AlGaN/GaN ***,SBA gate dielectrics result in threshold voltage modulation of AlGaN/GaN *** with those of AlGaN/GaN MESHEMTs,the threshold voltages of AlGaN/GaN MISHEMTs with Al_(2)O_(3) gate dielectrics shift negatively from-5.5 V to-7.5 *** contrast with the normally used gate dielectrics,the threshold voltages of MISHEMTs with SBA gate dielectrics shift positively from-5.5 V to-3.5 *** on an x-ray photoelectron spectrum study and energy band spectrum calculation,the primary mechanism of the threshold voltage modulation is attributed to the decrease in the surface valence-band maximum and the increase in the barrier height by SBA gate dielectrics.

关键词： AlGaN/GaN MISHEMT HEMTs

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer

引用

Journal of Semiconductors 2016年第6期37卷 112-115页

作者：高涛徐锐敏张凯孔月婵周建军孔岑郁鑫鑫董迅陈堂胜 Fundamental Science on EHF laboratory University of Electronic Science and Technology of China (UESTC) Science and Technology on Monolithic Integrated Circuits and Modules laboratory Nanjing Electronic Devices Institute

We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors（MOS-HEMTs） by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_（1-x）O_3/Al_2O_3 stack（x≈0.33） grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier *** enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique,delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/*** balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.

关键词： AlGaN/GaN enhancement-mode(E-mode) stack gate dielectrics atomic layer deposition(ALD)

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Tantalum pentoxide:a new material platform for high-performance dielectric metasurface optics in the ultraviolet and visible region

引用

Light(Science & Applications) 2024年第1期13卷 142-152页

作者： Cheng Zhang Lu Chen Zhelin Lin Junyeob Song Danyan Wang Moxin Li Okan Koksal Zi Wang Grisha Spektor David Carlson Henri J.Lezec Wenqi Zhu Scott Papp Amit Agrawal School of Optical and Electronic Information&Wuhan National laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhanHubei 430074China National Institute of Standards and Technology GaithersburgMD 20899USA University of Maryland College ParkMD 20742USA National Institute of Standards and Technology BoulderCO 80305USA

Dielectric metasurfaces,composed of planar arrays of subwavelength dielectric structures that collectively mimic the operation of conventional bulk optical elements,have revolutionized the field of optics by their potential in constructing high-efficiency and multi-functional optoelectronic systems on *** performance of a dielectric metasurface is largely determined by its constituent material,which is highly desired to have a high refractive index,low optical loss and wide bandgap,and at the same time,be fabrication ***,we present a new material platform based on tantalum pentoxide(Ta2O5)for implementing high-performance dielectric metasurface optics over the ultraviolet and visible spectral *** wide-bandgap dielectric,exhibiting a high refractive index exceeding 2.1 and negligible extinction coefficient across a broad spectrum,can be easily deposited over large areas with good quality using straightforward physical vapor deposition,and patterned into high-aspect-ratio subwavelength nanostructures through commonly-available fluorine-gas-based reactive ion *** implement a series of highefficiency ultraviolet and visible metasurfaces with representative light-field modulation functionalities including polarization-independent high-numerical-aperture lensing,spin-selective hologram projection,and vivid structural color generation,and the devices exhibit operational efficiencies up to 80%.Our work overcomes limitations faced by scalability of commonly-employed metasurface dielectrics and their operation into the visible and ultraviolet spectral range,and provides a novel route towards realization of high-performance,robust and foundry-manufacturable metasurface optics.

关键词： dielectric optics ultraviolet

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

TDDB characteristic and breakdown mechanism of ultra-thin SiO_2/HfO_2 bilayer gate dielectrics

引用

Journal of Semiconductors 2014年第6期35卷 32-37页

作者：陶芬芬杨红唐波唐兆云徐烨锋许静王卿璞闫江 School of Physics Shandong University Key laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The characteristics of TDDB （time-dependent dielectric breakdown） and SILC （stress-induced leakage current） for an ultra-thin SiO2/HfO2 gate dielectric stack are studied. The EOT （equivalent-oxide-thickness） of the gate stack （Si/SiO2/HfOz/TiN/TiA1/TiN/W） is 0.91 am. The field acceleration factor extracted in TDDB experi- ments is 1.59 ***/MV, and the maximum voltage is 1.06 V when the devices operate at 125 ℃ for ten years. A detailed study on the defect generation mechanism induced by SILC is presented to deeply understand the break- down behavior. The trap energy levels can be calculated by the SILC peaks： one S1LC peak is most likely to be caused by the neutral oxygen vacancy in the HfO2 bulk layer at 0.51 eV below the Si conduction band minimum; another SILC peak is induced by the interface traps, which are aligned with the silicon conduction band edge. Fur- thermore, the great difference between the two SILC peaks demonstrates that the degeneration of the high-k layer dominates the breakdown behavior of the extremely thin gate dielectric.

关键词： HfO2 TDDB SILC bulk trap interface trap

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Pendant Group Effect of Polymeric dielectrics on the Performance of Organic Thin Film Transistors

引用

Chinese Journal of Structural Chemistry 2021年第11期40卷 1541-1549,1410页

作者： HUANG Chong-Yu FENG Shi-Yu HUANG Wei-Guo State Key laboratory of Structural Chemistry Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou 350002China University of Chinese Academy of Sciences Beijing 100049China Fujian Science&Technology Innovation laboratory for Optoelectronic Information of China Fuzhou 350002China

Polymer dielectric is superior to its inorganic counterparts due to not only the low cost and intrinsic flexibility,but also the readily tunable dielectric constant,surface charge trap density,charge ejection and releasing ability and dipole moment,and all these properties play decisive roles in regulating the characteristic and performances of organic thin film transistors(OTFT).However,systematical studies on the relationship between structure and properties of polymeric dielectrics are *** this end,a series of polymeric dielectrics with well-defined linkages(ester or amide bonds)and predesigned pendant groups(alkyl-and aromatic-groups)are synthesized in high *** studies show that the polyamide dielectrics exhibit higher dielectric constant,surface charge trapping density,and better charge storage capability than corresponding polyester ***,increasing theπelectron delocalization of the pendant groups generally benefits the charge storage property and transistor memory *** calculation reveals that the hydrogen bonding between the linkage groups and the energy alignment between polymeric dielectric and semiconductor are responsible for the observed performance differences of OTFT with different polymeric *** results may shine light on the design of polymeric dielectrics for OTFTs with different applications.

关键词： polymer dielectric organic thin film transistor hydrogen bonding π-electron delocalization noncovalent interaction

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：