The influence and explanation of fringing-induced barrier lowering on sub-100 nm MOSFETs with high-k gate dielectrics

作     者：马飞 刘红侠 匡潜玮 樊继斌 Ma Fei,Liu Hong-Xia,Kuang Qian-Wei,and Fan Ji-Bin Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China

作者机构：Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and DevicesSchool of MicroelectronicsXidian University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2012年第21卷第5期

页      面：602-606页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.60936005 and 61076097) the Cultivation Fund of the Key Scientific and Technical Innovation Project of Ministry of Education of China(Grant No.708083) the Fundamental Research Funds for the Central Universities,China(Grant No.20110203110012) 

主　　题：high-k gate dielectric fringing-induced barrier lowering stack gate dielectric MOSFET 

摘      要：The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device *** equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL *** FIBL effect is enhanced and the short channel performance is degraded with increasing *** on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain（LDD） overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect.