检索结果-南通市图书馆

Ultrafast laser state active controlling based on anisotropic quasi-1D material

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Light(Science & Applications) 2024年第4期13卷 717-726页

作者： Zixin Yang Qiang Yu Jian Wu Haiqin Deng Yan Zhang Wenchao Wang Tianhao Xian Luyi Huang Junrong Zhang Shuai Yuan Jinyong Leng Li Zhan Zongfu Jiang Junyong Wang Kai Zhang Pu Zhou College of Advanced Interdisciplinary Studies National University of Defense TechnologyChangsha 410073China. Nanhu Laser laboratory National University of Defense TechnologyChangsha 410073China. i-lab&Key laboratory of nanodevices and Applications&Key laboratory of Nanophotonic Materials and Devices Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China. School of Applied and Engineering Physics Cornell UniversityIthacaNY 14853USA. State Key laboratory of Advanced Optical Communication Systems and Networks School of Physics and AstronomyShanghai Jiao Tong UniversityShanghai 200240China. Shanghai Key lab of Modern Optical System University of Shanghai for Science and TechnologyShanghai 200093China

Laser state active controlling is challenging under the influence of inherent loss and other nonlinear effects in ultrafast systems.Seeking an extension of degree of freedom in optical devices based on low-dimensional materials may be a way forward.Herein,the anisotropic quasi-one-dimensional layered material Ta2PdS6 was utilized as a saturable absorber to modulate the nonlinear parameters effectively in an ultrafast system by polarization-dependent absorption.The polarization-sensitive nonlinear optical response facilitates the Ta2PdS6-based mode-lock laser to sustain two types of laser states,i.e.,conventional soliton and noise-like pulse.The laser state was switchable in the single fiber laser with a mechanism revealed by numerical simulation.Digital coding was further demonstrated in this platform by employing the laser as a codable light source.This work proposed an approach for ultrafast laser state active controlling with low-dimensional material,which offers a new avenue for constructing tunable on-fiber devices.

关键词： polarization fiber controlling

Flexible bidirectional self-powered photodetector with significantly reduced volume and accelerated response speed based on hydrogel and lift-off GaN-based nanowires

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Fundamental Research 2024年第2期4卷 369-378页

作者： Min Jiang Yukun Zhao Penghui Zheng Jianya Zhang Wenxian Yang Min Zhou Yuanyuan Wu Renjun Pei Shulong Lu Key lab of nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China CAS Key laboratory of Nano-Bio Interface Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Nanchang Research Institute Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesNanchang 330200China

Due to the wide range of potential applications for next-generation multi-functional devices,the flexible selfpowered photodetector(PD)with polarity-switchable behavior is essential but very challenging to be realized.Herein,a wearable bidirectional self-powered PD based on detached(Al,Ga)N and(In,Ga)N nanowires has been proposed and demonstrated successfully.Arising from the photovoltage-competing dynamics across(Al,Ga)N and(In,Ga)N nanowire photoelectrodes,such PD can generate the positive(33.3 mA W−1)and negative(-0.019 mA W−1)photo-responsivity under ultraviolet(UV)and visible illumination,respectively,leading to the bidirectional photocurrent behavior.Thanks to the introduction of quasi solid-state hydrogel,the PD can work without the liquid-electrolyte,thus remarkably reducing the volume from about 482 cm3 to only 0.18 cm3.Furthermore,the use of hydrogel is found to enhance response speed in the UV range by reducing the response time for more than 95%,which is mainly attributed to the increased open circuit potential and reduced ion transport distance.As the GaN connecting segment is pretty thin,the piezoelectric charges generated by stress are proposed to have only a limited effect on the photocurrent density.Therefore,both the stable on-off switching characteristics and photocurrent densities can still be achieved after being bent 400 times.With an excellent flexibility,this work creates opportunities for technological applications of bidirectional photocurrent PDs in flexible optoelectronic devices,e.g.,wearable intelligent sensors.

关键词： Flexible photodetector Bidirectional photocurrent Lift-off GaN-based nanowires Hydrogel Self-powered device

Realize ultralow-energy-consumption photo-synaptic device based on a single(Al,Ga)N nanowire for neuromorphic computing

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Nano Research 2024年第3期17卷 1933-1941页

作者： Xiushuo Gu Min Zhou Yukun Zhao Qianyi Zhang Jianya Zhang Yonglin Huang Shulong Lu College of Electronic and Optical Engineering&College of Flexible Electronics(Future Technology) Nanjing University of Posts and TelecommunicationsNanjing 210023China Key lab of nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Jiangsu Key laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and TechnologySuzhou University of Science and TechnologySuzhou 215009China

The rapid development of artificial intelligence poses an urgent need for low-energy-consumption and small-sized artificial photonic synapses.Here,it is pretty novel to demonstrate a light-stimulated synaptic device based on a single(Al,Ga)N nanowire successfully.Thanks to the presence of vacancy defects in the single nanowire,the artificial synaptic device can simulate multiple functions of biological synapses under stimulation of both 310 and 365 nm light photons,including paired-pulse facilitation,spike timing dependent plasticity,and memory learning capabilities.The energy consumption of artificial synaptic device can be reduced as little as 5.58×10^(-13) J,which is close to that of the biological synapse in human brain.Furthermore,the synaptic device is demonstrated to have the high stability for both long-time stimulation and long-time storage.Based on the experimental conductance of long-term potentiation and long-term depression,the simulated three-layer neural network can achieve a high recognition rate of 92%after only 10 training epochs.With a brain-like behavior,the single-nanowire-based synaptic devices can promote the development of visual neuromorphic computing technology and artificial intelligence systems requiring ultralow energy consumption.

关键词： single(Al Ga)N nanowire light-stimulated synaptic device low-energy-consumption neural network

A novel Sr_(5)BiTi_(3)Nb_(7)O_(30) tungsten bronze ceramic with high energy density and efficiency for dielectric capacitor applications

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Advanced Dielectrics 2023年第1期13卷 66-73页

作者： Xiangting Zheng Wentao Zhong Peng Zheng Wangfeng Bai Chong Luo Liang Zheng Yang Zhang lab for nanoelectronics and nanodevices Department of Electronics Science and Technology Hangzhou Dianzi UniversityHangzhou 310018P.R.China College of Materials and Environmental Engineering Hangzhou Dianzi UniversityHangzhou 310018P.R.China

Dielectric capacitors with high capacitive energy storage are urgently needed to meet the growing demand for high-performance energy storage devices.Herein,a novel lead-free Sr_(5)BiTi_(3)Nb_(7)O_(30)(SBTN)tungsten bronze relaxor ferroelectric ceramic is prepared and explored for potential energy storage applications.A high recoverable energy density Wrec(~3.72 J/cm^(3))and ultrahigh efficiencyη(~94.2%)at 380 kV/cm are achieved simultaneously.Both Wrec andηexhibit superior stabilities against temperature(30-140°C),cycles(100-105)and frequency(1-500 Hz).In addition,a high current density of 796 A/cm^(2) and a large power density of 71.7 MW/cm^(3) are achieved,together with good thermal endurance and fatigue resistance.These results demonstrate that the obtained SBTN ceramic can be deemed as the promising candidates for dielectric capacitor applications.

关键词： Energy storage ceramic tungsten bronze relaxor ferroelectrics charge-discharge.

Thickness-dependent enhanced optoelectronic performance of surface charge transfer-doped ReS2 photodetectors

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Nano Research 2022年第4期15卷 3638-3646页

作者： Peiyu Zeng Wenhui Wang Jie Jiang Zheng Liu Dongshuang Han Shuojie Hu Jiaoyan He Peng Zheng Hui Zheng Liang Zheng Xiaojing Yao Weitao Su Dexuan Huo Zhangting Wu Zhenhua Ni Yang Zhang lab for nanoelectronics and nanodevices Department of Electronics Science and TechnologyHangzhou Dianzi UniversityHangzhou 310018China School of Physics Southeast UniversityNanjing 211189China Jiangsu Province Special Equipment Safety Supervision and Inspection Institute Wuxi 214170China School of Sciences Hangzhou Dianzi UniversityHangzhou 310018China College of Physics and Hebei Advanced Thin Film laboratory Hebei Normal UniversityShijiazhuang 050024China Institute of Materials Physics Hangzhou Dianzi UniversityHangzhou 310018China

Surface charge transfer doping has been widely utilized to tune the electronic and optical properties of semiconductor photodetectors based on low-dimensional materials.Although many studies have been conducted on the performance(response time,responsivity,etc.)of doped photodetectors and their mechanisms,they merely examined a specific thickness and did not systematically explore the dependence of doping effects on the number of layers.This work performs a series of investigations on ReS_(2)photodetectors with different numbers of layers and demonstrates that the p-dopant tetrafluorotetracyanoquinodimethane(F_(4)-TCNQ)converts the deep trap states into recombination centers for few-layer ReS_(2)and induces a vertical p-n junction for thicker ReS_(2).A response time of 200 ms is observed in the decorated 2-layer ReS_(2)photodetector,more than two orders of magnitude faster than the response of the pristine photodetector,due to the disappearance of deep trap states.A current rectification ratio of 30 in the F_(4)-TCNQ-decorated sandwiched ReS_(2)device demonstrates the formation of a vertical p-n junction in a thicker ReS_(2)device.The responsivity is as high as 2,000 A/W owing to the strong carrier separation of the p-n junction.Different thicknesses of ReS_(2)enable switching of the prominent operating mechanism between transforming deep trap states into recombination centers and forming a vertical p-n junction.The thicknessdependent doping effect of a two-dimensional material serves as a new mechanism and provides a scheme toward improving the performance of other semiconductor devices,especially optical and electronic devices based on low-dimensional materials.

关键词： Surface charge transfer doping ReS_(2) thickness response time responsivity tetrafluorotetracyanoquinodimethane(F_(4)-TCNQ)

A neuromorphic core based on threshold switching memristor with asynchronous address event representation circuits

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2022年第2期65卷 211-217页

作者： Jinsong WEI Jilin ZHANG Xumeng ZHANG Zuheng WU Rui WANG Jian LU Tuo SHI Mansun CHAN Qi LIU Hong CHEN School of Microelectronics University of Science and Technology of China Institute of Microelectronics of Chinese Academy of Sciences Zhejiang lab Department of Microelectronics and nanoelectronics Tsinghua University Department of Electronic & Computer Engineering The Hong Kong University of Science and Technology

The full memristive network hardware features high density and excellent scalability. However,recent researches on the full memristive network have been limited to a single-layer network, due to the lack of effective and flexible communication between neurons. In this design, we demonstrate a neuromorphic core based on Ag/Si O2/Au threshold switching memristor, which has built-in asynchronous address event representation(AER) circuits to provide flexible communication between neurons. Since temporally sparse spikes are the medium of communication between neurons, the AER circuits are designed to transmit spikes serially which have been encoded with neurons’ addresses before transmission. With the asynchronous circuits design, the AER circuits will detect neurons’ output in real-time. To test the performance of the neuromorphic core, we designed a behavioral simulator for the neuromporphic core to simulate the liquid state machine(LSM) network, which achieves a 100% recognition rate in the free spoken digital dataset. The simulation results show that the neuromorphic core obtains 35 times higher performance than the CPU and111 times higher energy efficiency than the GPU.

关键词： leaky-integration-and-fire (LIF) memristor threshold switching artificial neuron AER circuits asynchronous circuits on-chip communication

Thickness-dependent excitonic properties of atomically thin 2H-MoTe2

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Chinese Physics B 2020年第1期29卷 452-456页

作者：李金焕邴单吴章婷吴国庆白静杜如霞祁正青 Department of Basic Teaching Nanjing Tech University Pujiang InstituteNanjing 211134China School of Network and Communication Engineering Jinling Institute of TechnologyNanjing 211169China lab for nanoelectronics and nanodevices Department of Electronics Science and TechnologyHangzhou Dianzi UniversityHangzhou 310018China

Two-dimensional(2D)2H-MoTe2 is a promising semiconductor because of its small bandgap,strong absorption,and low thermal conductivity.In this paper,we systematically study the optical and excitonic properties of atomically thin 2H-MoTe2(1–5 layers).Due to the fact that the optical contrast and Raman spectra of 2H-MoTe2 with different thicknesses exhibit distinctly different behaviors,we establish a quantitative method by using optical images and Raman spectra to directly identify the layers of 2H-MoTe2 thin films.Besides,excitonic states and binding energy in monolayer/bilayer 2H-MoTe2 are measured by temperature-dependent photoluminescence(PL)spectroscopy.At temperature T=3.3 K,we can observe an exciton emission at^1.19 eV and trion emission at^1.16 eV for monolayer 2H-MoTe2.While at room temperature,the exciton emission and trion emission both disappear for their small binding energy.We determine the exciton binding energy to be 185 meV(179 meV),trion binding energy to be 20 meV(18 me V)for the monolayer(bilayer)2H-MoTe2.The thoroughly studies of the excitonic states in atomically thin 2H-MoTe2 will provide guidance for future practical applications.

关键词： 2H-MoTe2 photoluminescence Raman exciton and trion

维普期刊数据库

Growth of uniformly doped black phosphorus films through versatile atomic substitution

在线全文

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2023年第6期66卷 78-86页

作者： Cheng CHEN Yang LU Chang LI Xingang HOU Yongjie WANG Junrong ZHANG Junyong WANG Kai ZHANG School of Nano-Tech and Nano-Bionics University of Science and Technology of China CAS Key laboratory of Nanophotonic Materials and Devices & Key laboratory of nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences Nano Science and Technology Institute University of Science and Technology of China

For the emerging excellent two-dimensional semiconductor black phosphorus(BP), doping has been proven as an effective way to tune its intrinsic properties. For the further development and expansion of BP-based research and application, the direct growth of doped BP films is highly desirable but still remains a challenge. In this work, the direct growth of uniformly doped-BP films on silicon substrates is achieved by a simple one-step vapor growth. The proposed decoupled feeding strategy significantly improves the effectiveness of doping and enables uniform dopant distribution in the grown films. The substitutional doping nature and high crystal quality of the grown doped films are confirmed by microscopy and crystal structural determination. Electrical transport measurement results reveal that Se and Te dopants perform mild electron doping effect and enable improve the electron mobility relative to pristine BP, while As dopant performs mild hole doping effect. It is believed that the direct growth of doped BP films in this work will facilitate the research development of BP in electronics and optoelectronics.

关键词： black phosphorus dope vapor growth thin film two-dimensional materials

Insight into the growth mechanism of black phosphorus

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Frontiers of physics 2023年第4期18卷 111-127页

作者： Yongjie Wang Qiang Yu Jie Li Junyong Wang Kai Zhang Nano Science and Technology Institute University of Science and Technology of ChinaSuzhou 215123China CAS Key laboratory of Nanophotonic Materials and Devices&Key laboratory of nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China

Two-dimensional(2D)black phosphorus(BP)has attracted great attention in recent years in fundamental research as well as optoelectronics applications.The controllable synthesis of high-quality BP is vital to the investigation of its intrinsic physical properties and versatile applications.Originally,BP was mostly synthesized under high temperatures and pressures.Subsequently,metal flux,wet chemical and chemical vapor transport(CVT)methods had been appeared successively.The pulsed laser deposition(PLD)and CVT methods have been used to prepare high-quality BP thin films on silicon substrates,which is significant for its monolithic integration and practical applications.To meet the demand of the scalable applications of BP,the direct preparation of BP films on dielectric substrates that avoids additional transfer process,is crucial to high-performance device implementation.In this review,the growing methods and corresponding mechanisms of BP are summarized and analyzed.Meanwhile,the view on the controllable growth of large-area,high-quality BP films is envisioned.

关键词： black phosphorus growth mechanism nucleation thin films