Thickness-dependent enhanced optoelectronic performance of surface charge transfer-doped ReS2 photodetectors

作     者：Peiyu Zeng Wenhui Wang Jie Jiang Zheng Liu Dongshuang Han Shuojie Hu Jiaoyan He Peng Zheng Hui Zheng Liang Zheng Xiaojing Yao Weitao Su Dexuan Huo Zhangting Wu Zhenhua Ni Yang Zhang Peiyu Zeng;Wenhui Wang;Jie Jiang;Zheng Liu;Dongshuang Han;Shuojie Hu;Jiaoyan He;Peng Zheng;Hui Zheng;Liang Zheng;Xiaojing Yao;Weitao Su;Dexuan Huo;Zhangting Wu;Zhenhua Ni;Yang Zhang

作者机构：Lab for Nanoelectronics and NanoDevicesDepartment of Electronics Science and TechnologyHangzhou Dianzi UniversityHangzhou 310018China School of PhysicsSoutheast UniversityNanjing 211189China Jiangsu Province Special Equipment Safety Supervision and Inspection InstituteWuxi 214170China School of SciencesHangzhou Dianzi UniversityHangzhou 310018China College of Physics and Hebei Advanced Thin Film LaboratoryHebei Normal UniversityShijiazhuang 050024China Institute of Materials PhysicsHangzhou Dianzi UniversityHangzhou 310018China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2022年第15卷第4期

页      面：3638-3646页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work was supported by the National Natural Science Foundation of China(No.61904043) the Natural Science Foundation of Zhejiang Province(No.LQ19A040009) 

主　　题：Surface charge transfer doping ReS_(2) thickness response time responsivity tetrafluorotetracyanoquinodimethane(F_(4)-TCNQ) 

摘      要：Surface charge transfer doping has been widely utilized to tune the electronic and optical properties of semiconductor photodetectors based on low-dimensional *** many studies have been conducted on the performance(response time,responsivity,etc.)of doped photodetectors and their mechanisms,they merely examined a specific thickness and did not systematically explore the dependence of doping effects on the number of *** work performs a series of investigations on ReS_(2)photodetectors with different numbers of layers and demonstrates that the p-dopant tetrafluorotetracyanoquinodimethane(F_(4)-TCNQ)converts the deep trap states into recombination centers for few-layer ReS_(2)and induces a vertical p-n junction for thicker ReS_(2).A response time of 200 ms is observed in the decorated 2-layer ReS_(2)photodetector,more than two orders of magnitude faster than the response of the pristine photodetector,due to the disappearance of deep trap states.A current rectification ratio of 30 in the F_(4)-TCNQ-decorated sandwiched ReS_(2)device demonstrates the formation of a vertical p-n junction in a thicker ReS_(2)*** responsivity is as high as 2,000 A/W owing to the strong carrier separation of the p-n *** thicknesses of ReS_(2)enable switching of the prominent operating mechanism between transforming deep trap states into recombination centers and forming a vertical p-n *** thicknessdependent doping effect of a two-dimensional material serves as a new mechanism and provides a scheme toward improving the performance of other semiconductor devices,especially optical and electronic devices based on low-dimensional materials.