Growth of uniformly doped black phosphorus films through versatile atomic substitution

作     者：Cheng CHEN Yang LU Chang LI Xingang HOU Yongjie WANG Junrong ZHANG Junyong WANG Kai ZHANG Cheng CHEN;Yang LU;Chang LI;Xingang HOU;Yongjie WANG;Junrong ZHANG;Junyong WANG;Kai ZHANG

作者机构：School of Nano-Tech and Nano-BionicsUniversity of Science and Technology of China CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applicationsi-LabSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences Nano Science and Technology InstituteUniversity of Science and Technology of China 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2023年第66卷第6期

页      面：78-86页

核心收录：

学科分类：0808[工学-电气工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0812[工学-计算机科学与技术（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by National Key Research and Development Program of China (Grant No. 2021YFA1200804) National Natural Science Foundation of China (Grant Nos. 62274175, 61927813) Jiangsu Province Key R&D Program (Grant No. BE2021007-3) support from the Vacuum Interconnected Nanotech Workstation (Nano-X) of Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences 

主　　题：black phosphorus dope vapor growth thin film two-dimensional materials 

摘      要：For the emerging excellent two-dimensional semiconductor black phosphorus(BP), doping has been proven as an effective way to tune its intrinsic properties. For the further development and expansion of BP-based research and application, the direct growth of doped BP films is highly desirable but still remains a challenge. In this work, the direct growth of uniformly doped-BP films on silicon substrates is achieved by a simple one-step vapor growth. The proposed decoupled feeding strategy significantly improves the effectiveness of doping and enables uniform dopant distribution in the grown films. The substitutional doping nature and high crystal quality of the grown doped films are confirmed by microscopy and crystal structural determination. Electrical transport measurement results reveal that Se and Te dopants perform mild electron doping effect and enable improve the electron mobility relative to pristine BP, while As dopant performs mild hole doping effect. It is believed that the direct growth of doped BP films in this work will facilitate the research development of BP in electronics and optoelectronics.