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Defects‑Rich Heterostructures Trigger Strong Polarization Coupling in Sulfides/Carbon Composites with Robust Electromagnetic Wave Absorption

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Nano-Micro Letters 2025年第1期17卷 528-547页

作者： Jiaolong Liu Siyu Zhang Dan Qu Xuejiao Zhou Moxuan Yin Chenxuan Wang Xuelin Zhang Sichen Li Peijun Zhang Yuqi Zhou Kai Tao Mengyang Li Bing Wei Hongjing Wu Mengyang Li Bing Wei Hongjing Wu School of Physics Xidian UniversityXi’an 710071People’s Republic of China School of Advanced Materials and Nanotechnology State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyXidian UniversityXi’an 710071People’s Republic of China School of Microelectronics Xidian UniversityXi’an 710071People’s Republic of China School of Telecommunication Engineering Xidian UniversityXi’an 710071People’s Republic of China MOE key laboratory of Material Physics and Chemistry Under Extraordinary School of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710072People’s Republic of China The Ministry of Education key laboratory of Micro and Nano Systems forAerospace School of Mechanical EngineeringNorthwestern PolytechnicalUniversityXi’an 710072People’s Republic of China

Defects-rich heterointerfaces integrated with adjustable crystalline phases and atom vacancies,as well as veiled dielectric-responsive character,are instrumental in electromagnetic *** methods,however,constrain their delicate ***,an innovative alternative is proposed:carrageenan-assistant cations-regulated(CACR)strategy,which induces a series of sulfides nanoparticles rooted in situ on the surface of carbon *** unique configuration originates from strategic vacancy formation energy of sulfides and strong sulfides-carbon support interaction,benefiting the delicate construction of defects-rich heterostructures in M_(x)S_(y)/carbon composites(M-CAs).Impressively,these generated sulfur vacancies are firstly found to strengthen electron accumulation/consumption ability at heterointerfaces and,simultaneously,induct local asymmetry of electronic structure to evoke large dipole moment,ultimately leading to polarization coupling,i.e.,defect-type interfacial ***“Janus effect”(Janus effect means versatility,as in the Greek two-headed Janus)of interfacial sulfur vacancies is intuitively confirmed by both theoretical and experimental investigations for the first ***,the sulfur vacancies-rich heterostructured Co/Ni-CAs displays broad absorption bandwidth of 6.76 GHz at only 1.8 mm,compared to sulfur vacancies-free CAs without any dielectric *** defects-rich heterostructures,this one-pot CACR strategy may steer the design and development of advanced nanomaterials,boosting functionality across diverse application domains beyond electromagnetic response.

关键词： Defects-rich heterointerfaces Sulfides Polarization coupling Electromagnetic wave absorption

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Groove-type channel enhancement-mode Al GaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

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Chinese Physics B 2016年第8期25卷 340-346页

作者：段小玲张进成肖明赵一宁静郝跃 key laboratory of wide band-gap semiconductor technology School of Microelectronics Xidian University

A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor（GTCE-HEMT）with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 m S/mm, and subthreshold slope of 85 m V/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage（VB） is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode（D-mode） polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits.

关键词： AlGaN/GaN HEMT enhancement-mode operation groove-type channel nonpolar

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C-Implanted N-Polar GaN Films Grown by Metal Organic Chemical Vapor Deposition

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Chinese Physics Letters 2016年第12期33卷 138-141页

作者：赵颖许晟瑞林志宇张进成姜腾付梦笛朱家铎陆琴郝跃 key laboratory of wide band-gap semiconductor technology School of MicroelectronicsXidian University

C-implantation N-polar CaN films are grown on c-plane sapphire substrates by metal organic chemical vapor deposition. C-implantation induces a large number of defects and causes disorder of the lattice structure in the N-polar GaN film. Raman measurements performed on the N-polar GaN film before C-implantation after C-implantation and subsequent annealing at 1050℃ for 5 rain indicate that after annealing the disordered GaN lattice is almost recovered. High resolution x-ray diffraction shows that after implantation there is an obvious increase of screw-dislocation densities, and the densities of edge dislocation show slight change. Carbon implantation can induce deep acceptors in GaN, thus the background carriers induced by the high oxygen incorporation in the N-polar GaN film will be partially compensated for, resulting in 25 times the resistivity, which is demonstrated by the temperature-dependent Hall-effect measurement.

关键词： GaN in as by of

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Ohmic Contact at Al/TiO_2/n-Ge Interface with TiO_2 Deposited at Extremely Low Temperature

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Chinese Physics Letters 2018年第2期35卷 116-119页

作者： Yi Zhang Huan Liu Gen-Quan Han Yan Liu Jin-Cheng Zhang Yue Hao key laboratory of wide band-gap semiconductor technology School of MicroelectronicsXidian University

TiO2deposited at extremely low temperature of 120°C by atomic layer deposition is inserted between metal and n-Ge to relieve the Fermi level pinning. X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy indicate that the lower deposition temperature tends to effectively eliminate the formation of GeOxto reduce the tunneling resistance. Compared with TiO2deposited at higher temperature of 250°C,there are more oxygen vacancies in lower-temperature-deposited TiO2, which will dope TiO2contributing to the lower tunneling resistance. Al/TiO2/n-Ge metal-insulator-semiconductor diodes with 2 nm 120°C deposited TiO2achieves 2496 times of current density at-0.1 V compared with the device without the TiO2interface layer case, and is 8.85 times larger than that with 250°C deposited TiO2. Thus inserting extremely low temperature deposited TiO2to depin the Fermi level for n-Ge may be a better choice.

关键词： TiO Ohmic Contact at Al/TiO2/n-Ge Interface with TiO2 Deposited at Extremely Low Temperature Ge Al

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Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition

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Chinese Physics B 2012年第12期21卷 403-407页

作者：林志宇张进成周昊李小刚孟凡娜张琳霞艾姗许晟瑞赵一郝跃 key laboratory of wide band-gap semiconductor technology School of MicroelectronicsXidian University

In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire （0001） substrate with double A1N buffer layers. The buffer layer consists of a low-temperature （LT） A1N layer and a high-temperature （HT） A1N layer that are grown at 600 ℃ and 1000 ℃, respectively. It is observed that the thickness of the LT-A1N layer drastically influences the quality of GaN thin film, and that the optimized 4.25-min-LT-A1N layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.

关键词： GaN A1N buffer layer metal-organic chemical vapour deposition threading dislocations

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Phonon Limited Electron Mobility in Germanium FinFETs:Fin Direction Dependence

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Chinese Physics Letters 2019年第2期36卷 54-58页

作者： Ying Jing Gen-Quan Han Yan Liu Jin-Cheng Zhang Yue Hao key laboratory of wide band-gap semiconductor technology School of MicroelectronicsXidian University

We investigate the phonon limited electron mobility in germanium(Ge) fin field-effect transistors(FinFETs)with fin rotating within(001),(110),and(111)-oriented wafers. The coupled Schrodinger-Poisson equations are solved self-consistently to calculate the electronic structures for the two-dimensional electron gas, and Fermi's golden rule is used to calculate the phonon scattering rate. It is concluded that the intra-valley acoustic phonon scattering is the dominant mechanism limiting the electron mobility in Ge FinFETs. The phonon limited electron motilities are influenced by wafer orientation, channel direction, in thickness Wfin, and inversion charge density Ninv. With the fixed Wfin, fin directions of(110),(112) and(110) within(001),(110), and(111)-oriented wafers provide the maximum values of electron mobility. The optimized for mobility is also dependent on wafer orientation and channel direction. As Ninv, increases, phonon limited mobility degrades, which is attributed to electron repopulation from a higher mobility valley to a lower mobility valley as Ninv increases.

关键词： Phonon Limited Electron Mobility Fin Direction Dependence

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Nonlinear characterization of GaN HEMT

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Journal of semiconductors 2010年第11期31卷 18-23页

作者：陈炽郝跃杨凌全思马晓华张进城 National key laboratory of wide band-gap semiconductor technology School of MicroelectronicsXidian University

DC I-V output,small signal and an extensive large signal characterization（load-pull measurements） of a GaN HEMT on a SiC substrate with different gate widths of 100μm and 1 mm have been carried *** the small signal data,it has been found that the cutoff frequencies increase with gate width varying from 100μm to 1 mm,owing to the reduced contribution of the parasitic *** devices investigated with different gate widths are enough to work in the C band and X *** large signal measurements include the load-pull measurements and power sweep measurements at the C band（5.5 GHz） and X band（8 GHz）.When biasing the gate voltage in class AB and selecting the source impedance,the optimum load impedances seen from the device for output power and PAE were localized in the load-pull *** results of a power sweep at an 8 GHz biased various drain voltage demonstrate that a GaN HEMT on a SiC substrate has good thermal conductivity and a high breakdown voltage,and the CW power density of 10.16 W/mm was *** the results of the power sweep measurement at 5.5 GHz with different gate widths, the actual scaling rules and heat effect on the large periphery device were analyzed,although the effects are not serious. The measurement results and analyses prove that a GaN HEMT on a SiC substrate is an ideal candidate for high-power amplifier design.

关键词： GaN HEMT load-pull measurements optimum load impedance power sweep measurement

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Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

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Chinese Physics Letters 2016年第10期33卷 145-148页

作者：全汝岱张进成张雅超张苇航任泽阳郝跃 key laboratory of wide band-gap semiconductor technology School of MicroelectronicsXidian University

Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.

关键词： GaN is in of Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition by on

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Growth of InAlGaN Quaternary Alloys by Pulsed Metalorganic Chemical Vapor Deposition

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Chinese Physics Letters 2016年第4期33卷 139-142页

作者：全汝岱张进成许晟瑞薛军帅赵一宁静林志宇任泽阳郝跃 key laboratory of wide band-gap semiconductor technology School of MicroelectronicsXidian University

Epitaxial growth of InA1GaN/GaN structures are performed on the c-plane sapphire by pulsed metal organic chemical vapor deposition with different triethylgallium （TEGa） flows in the growth process of InA1GaN qua- ternary alloys. X-ray photoelectron spectroscopy results show that the A1/In ratio of the samples increases as the TEGa flows increase in the InAIGaN quaternary growth process. High-resolution x-ray diffraction results show that the crystal quality is improved with increasing TEGa flows. Morphology of the InA1GaN/GaN het- erostructures is characterized by an atomic force microscopy, and the growth mode of the InA1GaN quaternary shows a 21） island growth mode. The minimum surface roughness is 0.2Ohm with the TEGa flows equaling to 3.6 μool/rain in rms. Hall effect measurement results show that the highest electron mobilityμ is 1005.49 cm2/Vs and the maximal two-dimensional electron gas is 1.63 × 1013 em-2.

关键词： of Al by GaN in is AFM mode AIN

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An X-band four-way combined GaN solid-state power amplifier

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Journal of semiconductors 2010年第1期31卷 58-64页

作者：陈炽郝跃冯辉谷文萍李志明胡仕刚马腾 National key laboratory of wide band-gap semiconductor technology School of MicroelectronicsXidian University

An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self- developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an Al- GaN/GaN HEMT, Wilkinson power hybrids, a DC-bias circuit and microstrip matching circuits. For the stability of the amplifier module, special RC networks at the input and output, a resistor between the DC power supply and a transistor gate at the input and 3λ/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%, and an output power of 42.93 dBm; the power gain compression is 2 dB. For a four-way combined solid-state amplifier, the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET, the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier.

关键词： A1GaN/GaN HEMT solid-state power amplifiers Wilkinson hybrid coupler

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