Growth of InAlGaN Quaternary Alloys by Pulsed Metalorganic Chemical Vapor Deposition

作     者：全汝岱 张进成 许晟瑞 薛军帅 赵一 宁静 林志宇 任泽阳 郝跃 

作者机构：Key Laboratory of Wide Band-Gap Semiconductor TechnologySchool of MicroelectronicsXidian University 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2016年第33卷第4期

页      面：139-142页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002 the National Natural Science Foundation of China under Grant Nos 11435010,61474086 and 61334002 

主　　题：of Al by GaN in is AFM mode AIN 

摘      要：Epitaxial growth of InA1GaN/GaN structures are performed on the c-plane sapphire by pulsed metal organic chemical vapor deposition with different triethylgallium （TEGa） flows in the growth process of InA1GaN qua- ternary alloys. X-ray photoelectron spectroscopy results show that the A1/In ratio of the samples increases as the TEGa flows increase in the InAIGaN quaternary growth process. High-resolution x-ray diffraction results show that the crystal quality is improved with increasing TEGa flows. Morphology of the InA1GaN/GaN het- erostructures is characterized by an atomic force microscopy, and the growth mode of the InA1GaN quaternary shows a 21） island growth mode. The minimum surface roughness is 0.2Ohm with the TEGa flows equaling to 3.6 μool/rain in rms. Hall effect measurement results show that the highest electron mobilityμ is 1005.49 cm2/Vs and the maximal two-dimensional electron gas is 1.63 × 1013 em-2.