An X-band four-way combined GaN solid-state power amplifier

作     者：陈炽 郝跃 冯辉 谷文萍 李志明 胡仕刚 马腾 

作者机构：National Key Laboratory of Wide Band-Gap Semiconductor TechnologySchool of MicroelectronicsXidian University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2010年第31卷第1期

页      面：58-64页

核心收录：

学科分类：080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：supported by the National Natural Science Foundation of China(Nos.60736033 60676048) 

主　　题：A1GaN/GaN HEMT solid-state power amplifiers Wilkinson hybrid coupler 

摘      要：An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self- developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an Al- GaN/GaN HEMT, Wilkinson power hybrids, a DC-bias circuit and microstrip matching circuits. For the stability of the amplifier module, special RC networks at the input and output, a resistor between the DC power supply and a transistor gate at the input and 3λ/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%, and an output power of 42.93 dBm; the power gain compression is 2 dB. For a four-way combined solid-state amplifier, the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET, the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier.