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Oscillation of Dzyaloshinskii–Moriya interaction driven by weak electric fields

Chinese Physics B 2024年第2期33卷 487-491页

作者：陈润泽曹安妮王馨苒柳洋杨洪新赵巍胜 Fert Beijing institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China Hefei Innovation Research institute Beihang UniversityHefei 230013China Beihang-Goertek Joint microelectronics institute Qingdao Research InstituteBeihang UniversityQingdao 266000China National Laboratory of solid state Microstructures School of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Beijing microelectronics Technology institute Beijing 100076China

Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin–orbit coupling(SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime(< 10-2V/nm). Brillouin light scattering(BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI(VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin–orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.

关键词： Dzyaloshinskii-Moriya interaction weak electric field control effect Rashba spin-orbit coupling interfacial orbital hybridization

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Low phase noise K-band signal generation using polarization diverse single-soliton integrated microcombs

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Photonics Research 2024年第6期12卷 1175-1185页

作者： ALWALEED ALDHAFEERI HSIAO-HSUAN CHIN TRISTAN MELTON DONG IL LEE ALLEN CHU WENTING WANG MINGBIN YU PATRICK GUO-QIANG LO DIM-LEE KWONG CHEE WEI WONG Fang Lu Mesoscopic Optics and Quantum electronics Laboratory University of CaliforniaLos AngelesCalifornia 90095USA institute of microelectronics A*STARSingapore 117865Singapore state Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technologyand Shanghai Industrial Technology Research InstituteShanghai 200050China

Frequency microcombs with microwave and millimeter-wave repetition rates provide a compact solution for coherent communication and information *** implementation of these microcombs using a CMOS-compatible platform further paves the way for large-scale photonic integration and ***,we demonstrate free-running soliton microcombs with K-band repetition rates with very low phase noise over a 4 GHz pump detuning range reaching−117(−123)dBc/Hz at 10 kHz offset for a 19.7(10)GHz carrier without active pump stabilization,exceeding commercial electronic microwave oscillators at frequency offsets above 40 *** minimum laser noise to soliton microwave signal transduction factor observed is−*** noise performance is achieved using a hybridized dual-mode for soliton generation to achieve passive thermal stabilization and minimal soliton spectrum shift from prior Raman scattering and dispersive wave *** further examine the locking of the repetition rate to an external ultrastable photonic oscillator to illustrate the feasibility of phase noise suppression below the thermorefractive noise limits of microresonator frequency combs.

关键词： pump polarization millimeter

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High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

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Journal of Semiconductors 2024年第4期45卷 56-62页

作者： Aleksei Almaev Alexander Tsymbalov Bogdan Kushnarev Vladimir Nikolaev Alexei Pechnikov Mikhail Scheglov Andrei Chikiryaka Petr Korusenko Research and Development Center for Advanced Technologies in microelectronics National Research Tomsk State UniversityTomsk 634050Russia Fokon LLC Kaluga 248035Russia Department of Semiconductor electronics and Physics of Semiconductors National University of Science and Technology MISISMoscow 119049Russia Perfect Crystals LLC Saint Petersburg 194223Russia Department of solid-state electronics Saint Petersburg State UniversitySaint Petersburg 199034Russia Department of Physics Omsk State Technical UniversityOmsk 644050Russia

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in ***κ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire *** spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 *** maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 ***.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 *** enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet *** detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)*** responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,*** rise and decay times in self-powered mode did not exceed 100 ms.

关键词： κ(ε)-gallium oxide solar-blind shortwave ultraviolet radiation detectors self-powered operation mode

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Effect of multiple coulomb scattering on the beam tests of silicon pixel detectors

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Nuclear Science and Techniques 2024年第4期35卷 200-207页

作者： Lan-Kun Li Ming-Yi Dong Ze Gao Liang-Cheng-Long Jin Shu-Jun Zhao School of Physics and microelectronics Zhengzhou UniversityZhengzhou 450001China state Key Laboratory of Particle Detection and electronics(institute of High Energy Physics CAS)Beijing 100049China University of Chinese Academy of Science Beijing 100049China University of South China Hengyang 421001China

In the research and development of new silicon pixel detectors,a collimated monoenergetic charged-particle test beam equipped with a high-resolution pixel-beam telescope is crucial for prototype verification and performance *** the beam energy is low,the effect of multiple Coulomb scattering on the measured resolution of the Device Under Test(DUT)must be considered to accurately evaluate the performance of the pixel chips and *** study aimed to investigate the effect of multiple Coulomb scattering on the measured resolution,particularly at low beam *** were conducted using Allpix^(2) to study the effects of multiple Coulomb scattering under different beam energies,material budgets,and telescope *** simulations also provided the minimum energy at which the effect of multiple Coulomb scattering could be *** with the results of a five-layer detector system tested with an electron beam at DESY,the simulation results were consistent with the beam test results,confirming the reliability of the simulations.

关键词： Silicon Pixel Detectors Beam Telescope Multiple Coulomb Scattering Spatial Resolution

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Wafer-scale carbon-based CMOS PDK compatible with siliconbased VLSI design flow

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Nano Research 2024年第8期17卷 7557-7566页

作者： Minghui Yin Haitao Xu Yunxia You Ningfei Gao Weihua Zhang Hongwei Liu Huanhuan Zhou Chen Wang Lian-Mao Peng Zhiqiang Li institute of microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China state Key Lab of Fabrication Technologies for Integrated Circuits Beijing 100029China Beijing Hua Tan Yuan Xin electronics Technology Co. Ltd.Beijing 101399China institute of Carbon-based Thin Film electronics Peking UniversityShanxi 030012China Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based electronics School of ElectronicsPeking UniversityBeijing 100871China

Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure *** this study,we present the development of a waferscale 3μm carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3μm-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design *** proposed 3μm-CNTFETs-PDK features a contacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 134 *** of the 3μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator *** the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3795μm×2810μ*** research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements.

关键词： carbon nanotube field-effect transistors(CNTFETs) complementary metal-oxide-semiconductor(CMOS) process design kit(PDK) wafer-scale very-large-scale integration(VLSI)

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Atomic transport dynamics in crossed optical dipole trap

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Chinese Physics B 2024年第7期33卷 293-301页

作者：彭鹏张正熙樊耀塬殷国玲毛德凯陈徐宗熊炜周小计 state Key Laboratory of Advanced Optical Communication System and Network School of ElectronicsPeking UniversityBeijing 100871China institute of Carbon-based Thin Film electronics Peking UniversityTaiyuan 030012China state Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China

We study the dynamical evolution of cold atoms in crossed optical dipole trap theoretically and experimentally. The atomic transport process is accompanied by two competitive kinds of physical mechanics, atomic loading and atomic *** loading process normally is negligible in the evaporative cooling experiment on the ground, while it is significant in preparation of ultra-cold atoms in the space station. Normally, the atomic loading process is much weaker than the atomic loss process, and the atomic number in the central region of the trap decreases monotonically, as reported in previous research. However, when the atomic loading process is comparable to the atomic loss process, the atomic number in the central region of the trap will initially increase to a maximum value and then slowly decrease, and we have observed the phenomenon first. The increase of atomic number in the central region of the trap shows the presence of the loading process, and this will be significant especially under microgravity conditions. We build a theoretical model to analyze the competitive relationship, which coincides with the experimental results well. Furthermore, we have also given the predicted evolutionary behaviors under different conditions. This research provides a solid foundation for further understanding of the atomic transport process in traps. The analysis of loading process is of significant importance for preparation of ultra-cold atoms in a crossed optical dipole trap under microgravity conditions.

关键词： cold atom crossed optical dipole trap transport process

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On-Chip Micro Temperature Controllers Based on Freestanding Thermoelectric Nano Films for Low-Power electronics

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Nano-Micro Letters 2024年第7期16卷 98-108页

作者： Qun Jin Tianxiao Guo Nicolas Perez Nianjun Yang Xin Jiang Kornelius Nielsch Heiko Reith institute for Metallic Materials Leibniz Institute for Solid State and Materials Research01069 DresdenGermany institute of Materials Engineering University of Siegen57076 SiegenGermany institute of Applied Physics Technical University of Dresden01069 DresdenGermany institute of Materials Science Technical University of Dresden01069 DresdenGermany

Multidimensional integration and multifunctional com-ponent assembly have been greatly explored in recent years to extend Moore’s Law of modern ***,this inevitably exac-erbates the inhomogeneity of temperature distribution in microsystems,making precise temperature control for electronic components extremely ***,we report an on-chip micro temperature controller including a pair of thermoelectric legs with a total area of 50×50μm^(2),which are fabricated from dense and flat freestanding Bi2Te3-based ther-moelectric nano films deposited on a newly developed nano graphene oxide membrane *** tunable equivalent thermal resistance is controlled by electrical currents to achieve energy-efficient temperature control for low-power electronics.A large cooling temperature difference of 44.5 K at 380 K is achieved with a power consumption of only 445μW,resulting in an ultrahigh temperature control capability over 100 K mW^(-1).Moreover,an ultra-fast cooling rate exceeding 2000 K s^(-1) and excellent reliability of up to 1 million cycles are *** proposed on-chip temperature controller is expected to enable further miniaturization and multifunctional integration on a single chip for microelectronics.

关键词： Temperature control Low-power electronics On-chip micro temperature controller Freestanding thermoelectric nano films Temperature-sensitive components

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A compact multi-pixel superconducting nanowire single-photon detector array supporting gigabit space-to-ground communications

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Light(Science & Applications) 2024年第2期13卷 254-266页

作者： Hao Hao Qing-Yuan Zhao Yang-Hui Huang Jie Deng Fan Yang Sai-Ying Ru Zhen Liu Chao Wan Hao Liu Zhi-Jian Li Hua-Bing Wang Xue-Cou Tu La-Bao Zhang Xiao-Qing Jia Xing-Long Wu Jian Chen Lin Kang Pei-Heng Wu Research institute of Superconductor electronics(RISE) School of Electronic Science and EngineeringNanjing UniversityNanjingJiangsu 210023China Purple Mountain Laboratories NanjingJiangsu 211111China Hefei National Laboratory HefeiAnhui 230088China National Laboratory of solid state Microstructures and Department of Physics Nanjing UniversityNanjing 210023China

Classical and quantum space-to-ground communications necessitate highly sensitive receivers capable of extracting information from modulated photons to extend the communication distance from near-earth orbits to deep space *** achieve gigabit data rates while mitigating strong background noise photons and beam drift in a highly attenuated free-space channel,a comprehensive design of a multi-functional detector is *** this study,we present an innovative compact multi-pixel superconducting nanowire single-photon detector array that integrates near-unity detection efficiency(91.6%),high photon counting rate(1.61 Gcps),large dynamic range for resolving different photon numbers(1-24),and four-quadrant position sensing function all within one ***,we have constructed a communication testbed to validate the advantages offered by such an *** 8-PPM(pulse position modulation)format communication experiments,we have achieved an impressive maximum data rate of 1.5 Gbps,demonstrating sensitivities surpassing previous benchmarks at respective *** incorporating photon number information into error correction codes,the receiver can tolerate maximum background noise levels equivalent to 0.8 photons/slot at a data rate of 120 Mbps—showcasing a great potential for daylight operation ***,preliminary beam tracking tests were conducted through open-loop scanning techniques,which revealed clear quantitative dependence indicating sensitivity variations based on beam *** on the device characterizations and communication results,we anticipate that this device architecture,along with its corresponding signal processing and coding techniques,will be applicable in future space-to-ground communication tasks.

关键词： photon supporting correction

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Elevating the comprehensive thermal properties of rare-earth cerates through high-entropy design

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Journal of Materiomics 2024年第5期10卷 1126-1136页

作者： Zhaoxuan Zhang Yiling Huang Fan Peng Wei Zheng Caifen Jiang Xuemei Song Yi Zeng School of microelectronics Shanghai UniversityShanghai201800China The state Key Lab of High Performance Ceramics and Superfine Microstructure Shanghai Institute of CeramicsChinese Academy of ScienceShanghai200050China

In the rapidly evolving aerospace sector,the quest for sophisticated thermal barrier coating(TBC)materials has *** materials are primarily sought for their superior comprehensive thermal characteristics,which include a low thermal conductivity coupled with a high coefficient of thermal expansion(CTE)that synergizes with the *** our study,we adopt a solid-state method to synthesize a series of high-entropy rare-earth cerates:La_(2)Ce_(2)O_(7)(1RC),(La_(1/2)Nd_(1/2))2Ce_(2)O_(7)(2RC),(La_(1/3)Nd_(1/3)Sm_(1/3))_(2)Ce_(2)O_(7)(3RC),(La_(1/4)Nd_(1/4)Sm_(1/4)Eu_(1/4))_(2)Ce_(2)O_(7)(4RC),and(La_(1/5)Nd_(1/5)Sm_(1/5)Eu_(1/5)Gd_(1/5))2Ce2O7(5RC),all sintered at 1,600℃ for 10 *** thoroughly examine their phase structure,morphology,elemental distribution,and thermal *** in-depth analysis of the phonon scattering mechanisms reveals that 4RC and 5RC exhibit exceptional thermal properties:high CTEs of 13.00×10^(−6) K^(−1) and 12.77×10^(−6) K^(−1) at 1,400℃,and low thermal conductivities of 1.55 W/(m·K)and 1.68 W/(m·K)at 1,000℃,*** to other TBC systems,4RC and 5RC stand out for their excellent thermal *** study significantly contributes to the development of high-entropy oxides for TBC applications.

关键词： Thermal barrier coatings(TBCs) Comprehensive thermal properties Coefficient of thermal expansion Thermal conductivity Phonon scattering mechanisms

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Dielectric response of ANb_(2)O_(6)(A = Zn, Co, Mn, Ni) columbite niobates: From microwave to terahertz

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Journal of Advanced Ceramics 2024年第8期13卷 1189-1197页

作者： Weijia Luo Shun Wang Siyong Zheng Jining Li Menglong Wang Yongzheng Wen ingxia Li Ji Zhou state Key Laboratory of New Ceramics and Fine Processing School of Materials Science and EngineeringTsinghua UniversityBeijing 100084China institute of Laser and Optoelectronics School of Precision Instrument and Opto-Electronics EngineeringTianjin UniversityTianjin 300072China Shandong Inspur Artificial Intelligence Research institute Co. Ltd.Jinan 250013China School of microelectronics Tianjin UniversityTianjin 300072China

In the upcoming 6-generation(6G)revolution,the achievement of low power consumption has become a key objective in research concerning terahertz *** an important component of passive devices,there are very few low-loss dielectric ceramics in the terahertz *** elucidate the mechanism of loss and promote the application of microwave dielectric ceramics for future 6G technology(covering microwave and terahertz frequencies),the terahertz responses of ANb_(2)O_(6)(A=Zn,Co,Mn,and Ni)columbite niobates were *** influences of magnetic loss on the Qxf values in the microwave range with different transition metal ions in the A-site were reasonably ***,due to the weakened magnetic relaxation properties in the terahertz range,the samples all exhibited low loss and approximate transparency,especially for MnNb_(2)O_(6) and NiNb_(2)O_(6)(tano<0.01 and absorption coefficient<10 cm^(-1) below 1.2 THz),which subverted the definition of traditional low-loss microwave dielectric ***,based on Mie theory,we designed a prototypical broadband metamaterial reflector to validate the applicability of the ANb_(2)O_(6) system in the terahertz band,which is highly important for the development of terahertz ceramic-based passive devices.

关键词： columbite niobates terahertz response transition metal ions magnetic loss ceramic-based metamaterials

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